unneling effects in InAs/GaInSb superlattice infrared photodiodes

1997 ◽  
Vol 484 ◽  
Author(s):  
U. Weimar ◽  
F. Fuchs ◽  
E. Ahlswede ◽  
J. Schmitz ◽  
W. Pletschen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetic Fields ◽  
Electric Field ◽  
Dark Current ◽  
Reverse Bias ◽  
Cutoff Wavelength ◽  
Optical And Electrical Properties ◽  
Interband Tunneling ◽  
Infrared Photodiodes ◽  
Device Properties

AbstractThe optical and electrical properties of InAs/GaInSb superlattice mesa photodiodes with a cutoff wavelength around 8 pim are investigated. The influence of the surface potential at the mesa sidewalls on the device properties was studied by fabricating gate-controlled diodes. At least two mechanisms determining the dark current in the reverse bias region can be identified. At high reverse biases bulk bandto- band tunneling dominates while the current at low reverse biases is most likely governed by surface effects. Bulk interband tunneling is further investigated by applying magnetic fields B up to 7 T parallel and perpendicular to the electric field E across the p-n junction.

Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

2002 ◽  
Vol 743 ◽  
Author(s):  
Necmi Biyikli ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Turgut Tut ◽  
Ekmel Ozbay
Keyword(s):  
Power Density ◽  
Dark Current ◽  
Reverse Bias ◽  
Low Noise ◽  
Noise Power ◽  
Cutoff Wavelength ◽  
Solar Blind ◽  
Fabrication And Characterization ◽  
Noise Power Density

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

Dark Current Reduction in Near Infrared P-I-N Detector Diodes Fabricated from In.75Ga.25As Grown by Molecular Beam Epitaxy on InP Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Micovic ◽  
W. Z. Cai ◽  
Y. Ren ◽  
J. Neal ◽  
S. F. Nelson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Current Density ◽  
Dark Current ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Attractive Alternative ◽  
Cutoff Wavelength ◽  
Dark Current Density ◽  
Inp Substrates ◽  
Reference Samples

ABSTRACTWe have investigated several approaches to improve the material quality of lattice-mismatched In.75Ga.25As grown by Molecular Beam Epitaxy (MBE) on (100) InP substrates. They include linear grading of In composition from lattice matched In.53Ga.47As to In.75Ga.25As in a 1 μm buffer layer grown at reduced substrate temperature, in combination with various in situ annealing and material regrowth steps. The material was used for fabrication of mesa-structure p-i-n photodetectors with 2.2 μm cutoff wavelength. The room temperature dark current density at 1 V reverse bias was approximately 2 mA/cm2 in all structures that were subjected to anneal and regrowth process, a factor of three improvement over reference samples which were not subjected to annealing and regrowth. The dark current density at 15 V reverse bias (10 mA/cm2 for the best devices) was at least two orders of magnitude lower in all annealed samples than in reference samples. These results suggest that the MBE grown material can be an attractive alternative to the vapor phase epitaxy (VPE) grown material which is commonly used for fabrication of these detectors.

scholarly journals Preparation of superposed thin film (CdTe)1-xSex / ZnS and Studying the Effect of Concentration on Some its Electrical Properties.

2014 ◽  
Vol 11 (2) ◽  
pp. 584-589
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Dark Current ◽  
Reverse Bias ◽  
Vacuum Evaporation ◽  
X Ray Diffraction ◽  
Thermal Vacuum ◽  
Polycrystalline Structure ◽  
X Ray

Preparation of superposed thin film (CdTe)1-xSex / ZnS) with concentration of (x= 0.1, 0.3, 0.5) at a temperature of substrate (Ts= 80 0C) by using Thermal Vacuum Evaporation System. The measurement of X-ray diffraction shows that the compounds CdTe, ZnS, (CdTe)1-xSex and (CdTe)1-xSex / ZnS have a polycrystalline structure, the C-V characteristic shows that the capacitance degrease by increasing the concentration (x) in reverse bias, while the I-V characteristic shows the current dark (Id) increase in forward and reverse bias by increasing (x) and the photocurrent (Iph) increase in reverse bias by increasing the concentration (x), the values of photocurrent are greater than from the values of the dark current for all concentrations.

Structure and properties of rat thymus deoxyribonucleoprotein - I. Electric birefringence and centrifugation studies

1966 ◽  
Vol 164 (994) ◽  
pp. 75-95 ◽  
Keyword(s):  
Electrical Properties ◽  
Electric Field ◽  
Solution Phase ◽  
Optical And Electrical Properties ◽  
Structure And Properties ◽  
Single Particles ◽  
Electric Birefringence ◽  
Gel Phase ◽  
Particle Length ◽  
Large Clusters

Deoxyribonucleoprotein ( DNP ) has been prepared from rat thymus under strictly controlled conditions. It is obtained as an elastic, opaque gel and has been studied in gel form and after dilution, chiefly by the method of electric birefringence. The electric birefringence depends on optical and electrical properties of the particles oriented in an electric field and the decay of birefringence (on removal of the field) depends on the particle length. Birefringence measurements have been made over a range of concentrations and include the effects of ageing, vigorous shaking, temperature change and centrifugation. Preparations of satisfactory stability and with very reproducible properties have been obtained. At all concentrations, particles of apparently the same range of lengths (of up to about 1·6 μ m) are measured in the electric field. On centrifugation of dilutions of the gels, separation into a gel phase and a solution phase occurs; the birefringence properties of the latter are similar to those of unfractionated solutions at the same concentration. It is proposed, therefore, that the gels consist of networks of highly interlinked particles, the networks being broken up partly on dilution into clusters of (reversibly associated) particles. The gel phase is composed of large clusters and the solution phase of much smaller clusters or of single particles. In the electric field all clusters are at least partially broken so that orientation of more or less single particles occurs. Ageing is suggested to be a process of denaturation. It occurs more rapidly in shaken solutions than in controls. Undiluted gels are more resistant than dilutions to ageing, shaking and freezing.

Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures

2011 ◽  
Vol 45 (5) ◽  
pp. 657-662 ◽  
Author(s):  
R. A. Khabibullin ◽  
I. S. Vasil’evskii ◽  
G. B. Galiev ◽  
E. A. Klimov ◽  
D. S. Ponomarev ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electric Field ◽  
Optical And Electrical Properties

New graphene derivative with N-methylpyrrolidone: suspension, structural, optical and electrical properties

2019 ◽  
Vol 21 (23) ◽  
pp. 12494-12504 ◽  
Author(s):  
Evgenyi Yakimchuk ◽  
Vladimir Volodin ◽  
Irina Antonova
Keyword(s):  
Electrical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Optical And Electrical Properties ◽  
Leakage Currents ◽  
Breakdown Electric Field ◽  
Low Leakage ◽  
High K ◽  
High K Dielectric

G-NMP is a high-k dielectric with a permittivity of 7–9, low leakage currents of 107–108 A cm−2, an ultralow charge of −(1–4) × 1010 cm−2 and a breakdown electric field strength of (2–3) × 105 V cm−1.

Optical and Electrical Properties of Organic Conducting Polymers

2014 ◽  
Vol 8 (1) ◽  
pp. 1457-1463
Author(s):  
Salah Abdulla Hasoon
Keyword(s):  
Electrical Properties ◽  
Conjugated Polymer ◽  
Polymeric Materials ◽  
Quantum Mechanical ◽  
Optical And Electrical Properties ◽  
Electrically Conducting ◽  
Temperature Ranges ◽  
Lithium Tetrafluoroborate ◽  
Absorbance Peak ◽  
Polymerization Method

Novel electrically conducting polymeric materials are prepared in this work. Polythiophene (PT) and poly (3-Methelthiophene) (P3MT) films were prepared by electro-polymerization method using cyclic voltammetry in acetonitrile as a solvent and lithium tetrafluoroborate as the electrolyte on a gold electrode. Electrical properties of P3MT have been examined in different environments using UV-Vis absorption spectroscopy and quantum mechanical ab initio calculations, The observed absorption peaks at 314 and 415 nm, were attributed to the n-π* and π-π* transitions, respectively in the conjugated polymer chain, in contrast, the observed absorbance peak at 649 nm, is responsible for electric conduction. The temperature dependence of the conductivity can be fitted to the Arrhenius and the VTF equations in different temperature ranges.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

Sign in / Sign up

Export Citation Format

Share Document