scholarly journals GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy

2001 ◽  
Vol 24 (1) ◽  
pp. 1-11
Author(s):  
M. R. Lef ◽  
K. F. Yarn ◽  
C. C. Chen ◽  
W. R. Chang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wave Length ◽  
Differential Resistance ◽  
Current Gain ◽  
Switching Device ◽  
Multiplication Process ◽  
Current Voltage ◽  
New Type ◽  
Optoelectronic Switching

A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure. Symmetrical bidirectional S-shaped NDR characteristics are observed experimentally. The bidirectional current-voltage (I–V) characteristics exhibit a new type of NDR caused by an avalanche multiplication process in reverse biased base-collector region and barrier redistribution. Under a base current injection with respect to the cathode, the device exhibits a conventional transistor with a current gain of 1.2 at room temperature. The experimentally electrical results can be easily understood by an equivalent circuit. In addition, a new optoelectronic switching device is also proposed which may have the potential for bidirectional wave length emission.

A Confinement-Collector GaAs Switching Device Prepared by Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 1, No. 9A) ◽  
pp. 1937-1939
Author(s):  
Wen-Chau Liu ◽  
Der-Feng Guo ◽  
Yeong-Shyang Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Switching Device

GaAs‐InGaAs quantum‐well resonant‐tunneling switching device grown by molecular beam epitaxy

1994 ◽  
Vol 64 (20) ◽  
pp. 2685-2687 ◽  
Author(s):  
Wen‐Chau Liu ◽  
Der‐Feng Guo ◽  
Shiuh‐Ren Yih ◽  
Jing‐Tong Liang ◽  
Lih‐Wen Liah ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Switching Device ◽  
Ingaas Quantum Well

Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
A.V. Voitsekhovskii ◽  
S.N. Nesmelov ◽  
S.M. Dzyadukh ◽  
V.S. Varavin ◽  
S.A. Dvoretskii ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Space Charge Region ◽  
Molecular Beam ◽  
Differential Resistance ◽  
Anodic Oxide ◽  
Electrical Characteristics ◽  
Near Surface ◽  
Wide Range ◽  
Minority Carriers ◽  
Mis Structures

AbstractThe paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg1−xCdxTe films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO2/Si3N4 and anodic oxide films were used. As it is seen from the depth and width of the valley on the C-V characteristics, the capacitance is found to vary in a wide range, in contrast to the structures without graded-gap layers. It is shown that the graded-gap layer under MIS-structures with x = 0.22 effectively reduces the tunnelling generation via deep levels and increases a lifetime of minority carriers in the space charge region and its differential resistance. The properties of the HgCdTe-insulator interfaces are studied.

A Comparison of (100) Hg1−x Cdx Te and Hg1−x ZnxTe Grown By Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
R. D. Feldman ◽  
R. F. Austin ◽  
P. M. Bridenbaugh
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Wave Length ◽  
High Electron ◽  
Mbe Growth ◽  
Suitable Material ◽  
Zn Content ◽  
Length Range ◽  
Very High

ABSTRACTFilms of HgCdTe with x < 0.6 and of HgZnTe with x < 0.26 have been grown by molecular beam epitaxy (MBE). Very high electron mobilities have been achieved for both materials in the small bandgap region. Hall mobilities at 77K reach 4.8 × 105 cm2 /V-s for Hg0 87 Zn0.13 Te, and 3.1 × 105 cm2/V-s for Hg0.87 Zn0.13 Te. HgCdTe growth was easily extended to the 1.5 – 3 μm wave length range. Attempts to extend HgZnTe to these bandgaps were unsuccessful due to defects that are induced by surface roughness in high Zn-content films. These results suggest that HgCdTe is the more suitable material for MBE growth for near infrared applications.

Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

Electrical Characterization Of Nitrogen Acceptors In p-ZnSe/p-GaAs Grown By Molecular Beam Epitaxy

1996 ◽  
Vol 442 ◽  
Author(s):  
D. Seghier ◽  
H.P. Gislason
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
Energy Levels ◽  
Reverse Current ◽  
Electrical Characterization ◽  
Growth Conditions ◽  
Current Voltage ◽  
Major Interest ◽  
Transient Spectroscopy

AbstractUsing current-voltage measurements, deep-level transient spectroscopy and admittance spectroscopy we investigated nitrogen doped ZnSe grown on p-GaAs substrates by molecular beam epitaxy. Three major hole traps were observed with energy levels at 0. 11, 0.46, and 0.56 eV from the valence band. We attribute the level at 0.11 eV to a nitrogen acceptor. No other direct observations of this important acceptor level in p-ZnSe have been reported in the literature so far. The two remaining levels may originate from the nitrogen doping process. In addition, reverse current-voltage characteristics of the ZnSe/GaAs heterojunction show a hysteresis at low temperature and a soft saturation. At a constant reverse bias the current increases slowly until it reaches a steady state value. This behavior is attributed to a slow voltage-induced barrier lowering due to the presence of mismatch interface states. Therefore, these analyses are of a major interest for applications of ZnSe/GaAs based devices and illustrates the necessity of improving the growth conditions of such structures.

scholarly journals Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Krzesimir Nowakowski-Szkudlarek ◽  
Grzegorz Muziol ◽  
Mikolaj Żak ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Contact Layer ◽  
Light Emitting ◽  
Mg Doping ◽  
Current Voltage ◽  
Type Contact ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Diode Current

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 × 1020 cm–3.

A new type of epitaxial growth in lithium phthalocyanine film on KBr(100) prepared by the molecular‐beam epitaxy

1990 ◽  
Vol 68 (3) ◽  
pp. 1396-1398 ◽  
Author(s):  
Hajime Hoshi ◽  
Yusei Maruyama ◽  
Hideki Masuda ◽  
Tamotsu Inabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
New Type
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