A new double‐heterostructure optoelectronic switching device using molecular‐beam epitaxy

1986 ◽  
Vol 59 (2) ◽  
pp. 596-600 ◽  
Author(s):  
G. W. Taylor ◽  
J. G. Simmons ◽  
A. Y. Cho ◽  
R. S. Mand
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Switching Device ◽  
Double Heterostructure ◽  
Optoelectronic Switching

scholarly journals GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy

2001 ◽  
Vol 24 (1) ◽  
pp. 1-11
Author(s):  
M. R. Lef ◽  
K. F. Yarn ◽  
C. C. Chen ◽  
W. R. Chang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wave Length ◽  
Differential Resistance ◽  
Current Gain ◽  
Switching Device ◽  
Multiplication Process ◽  
Current Voltage ◽  
New Type ◽  
Optoelectronic Switching

A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure. Symmetrical bidirectional S-shaped NDR characteristics are observed experimentally. The bidirectional current-voltage (I–V) characteristics exhibit a new type of NDR caused by an avalanche multiplication process in reverse biased base-collector region and barrier redistribution. Under a base current injection with respect to the cathode, the device exhibits a conventional transistor with a current gain of 1.2 at room temperature. The experimentally electrical results can be easily understood by an equivalent circuit. In addition, a new optoelectronic switching device is also proposed which may have the potential for bidirectional wave length emission.

A Confinement-Collector GaAs Switching Device Prepared by Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 1, No. 9A) ◽  
pp. 1937-1939
Author(s):  
Wen-Chau Liu ◽  
Der-Feng Guo ◽  
Yeong-Shyang Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Switching Device

GaAs‐InGaAs quantum‐well resonant‐tunneling switching device grown by molecular beam epitaxy

1994 ◽  
Vol 64 (20) ◽  
pp. 2685-2687 ◽  
Author(s):  
Wen‐Chau Liu ◽  
Der‐Feng Guo ◽  
Shiuh‐Ren Yih ◽  
Jing‐Tong Liang ◽  
Lih‐Wen Liah ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Switching Device ◽  
Ingaas Quantum Well

The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy

1981 ◽  
Vol 39 (9) ◽  
pp. 683-685 ◽  
Author(s):  
W. T. Tsang ◽  
R. L. Hartman ◽  
B. Schwartz ◽  
P. E. Fraley ◽  
W. R. Holbrook
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Double Heterostructure

Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy

2003 ◽  
Vol 37 (6) ◽  
pp. 736-739
Author(s):  
S. V. Ivanov ◽  
K. D. Moiseev ◽  
V. A. Kaigorodov ◽  
V. A. Solov’ev ◽  
S. V. Sorokin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Injection Laser ◽  
Mid Infrared ◽  
Double Heterostructure
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