New structure of three-terminal GaAs p+−n−−δ(p+)−n−−n+ switching device prepared by molecular beam epitaxy

1987 ◽  
Vol 23 (17) ◽  
pp. 873 ◽  
Author(s):  
Y.H. Wang ◽  
K.F. Yarn ◽  
C.Y. Chan ◽  
M.S. Jame
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Switching Device

A Confinement-Collector GaAs Switching Device Prepared by Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 1, No. 9A) ◽  
pp. 1937-1939
Author(s):  
Wen-Chau Liu ◽  
Der-Feng Guo ◽  
Yeong-Shyang Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Switching Device

GaAs‐InGaAs quantum‐well resonant‐tunneling switching device grown by molecular beam epitaxy

1994 ◽  
Vol 64 (20) ◽  
pp. 2685-2687 ◽  
Author(s):  
Wen‐Chau Liu ◽  
Der‐Feng Guo ◽  
Shiuh‐Ren Yih ◽  
Jing‐Tong Liang ◽  
Lih‐Wen Liah ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Switching Device ◽  
Ingaas Quantum Well

scholarly journals GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy

2001 ◽  
Vol 24 (1) ◽  
pp. 1-11
Author(s):  
M. R. Lef ◽  
K. F. Yarn ◽  
C. C. Chen ◽  
W. R. Chang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wave Length ◽  
Differential Resistance ◽  
Current Gain ◽  
Switching Device ◽  
Multiplication Process ◽  
Current Voltage ◽  
New Type ◽  
Optoelectronic Switching

A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure. Symmetrical bidirectional S-shaped NDR characteristics are observed experimentally. The bidirectional current-voltage (I–V) characteristics exhibit a new type of NDR caused by an avalanche multiplication process in reverse biased base-collector region and barrier redistribution. Under a base current injection with respect to the cathode, the device exhibits a conventional transistor with a current gain of 1.2 at room temperature. The experimentally electrical results can be easily understood by an equivalent circuit. In addition, a new optoelectronic switching device is also proposed which may have the potential for bidirectional wave length emission.

GaAs‐InGaAs double delta‐doped quantum‐well switching device prepared by molecular beam epitaxy

1993 ◽  
Vol 62 (13) ◽  
pp. 1504-1506 ◽  
Author(s):  
Wei‐Chou Hsu ◽  
Wen‐Chau Liu ◽  
Der‐Feng Guo ◽  
Wen‐Shiung Lour
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Switching Device

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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