scholarly journals A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 257-260 ◽  
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva
Keyword(s):  
Monte Carlo ◽  
Phonon Scattering ◽  
Inversion Layer ◽  
Relaxation Times ◽  
Electron Velocity ◽  
Saturation Velocity ◽  
Electron Transport Properties ◽  
Effective Electric Field ◽  
Monte Carlo Simulator ◽  
Energy And Momentum

Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polaroptical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si MOSFETs. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher.

scholarly journals Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 287-290
Author(s):  
J. B. Roldan ◽  
F. Gamiz ◽  
J. A. Lopez-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Monte Carlo ◽  
Inversion Layer ◽  
Channel Length ◽  
Electron Velocity ◽  
Normal Operation ◽  
Electron Dynamics ◽  
Drift Diffusion ◽  
Operation Conditions ◽  
Non Local ◽  
Monte Carlo Simulator

A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.

scholarly journals Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 253-256
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva
Keyword(s):  
Monte Carlo ◽  
Performance Enhancement ◽  
Deep Submicron ◽  
Strained Si ◽  
Electron Transport Properties ◽  
Transport Effects ◽  
Non Local ◽  
Local Transport ◽  
Monte Carlo Simulator ◽  
The Impact

Electron transport properties of strained-Si on relaxed Si1 – xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electronvelocity- overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes.

scholarly journals Study of Electron Velocity Overshoot in NMOS Inversion Layers

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 429-435
Author(s):  
Wei-Kai Shih ◽  
Srinivas Jallepalli ◽  
Mahbub Rashed ◽  
Christine M. Maziar ◽  
Al. F. Tasch Jr.
Keyword(s):  
Monte Carlo ◽  
Carrier Transport ◽  
Inversion Layer ◽  
Effective Field ◽  
Electron Velocity ◽  
Lateral Field ◽  
Scattering Rate ◽  
Low Energy Electrons ◽  
Non Local ◽  
Spatially Varying

Non-local electron transport in nMOSFET inversion layers has been studied by Monte Carlo (MC) simulations. Inversion layer quantization has been explicitly included in the calculation of density of states and scattering rate for low-energy electrons while bulk band structure is used to describe the transport of more energetic electrons. For uniform, high-lateral field conditions, the effects of quantization are less pronounced due to the depopulation of electrons in the lower-lying subbands. On the other hand, Monte Carlo results for carrier transport in spatially varying lateral fields (such as those in the inversion layer of MOSFETs) clearly indicate that depopulation of the low-lying subbands is less evident in the non-local transport regime. Quasi-2D simulations have shown that, at high transverse effective field, the inclusion of a quantization domain does have an impact on the calculated spatial velocity transient.

scholarly journals Electron Mobility and Monte Carlo device simulation of MOSFETs

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 27-30 ◽  
Author(s):  
S. Yamakawa ◽  
H. Ueno ◽  
K. Taniguchi ◽  
C. Hamaguchi ◽  
K. Miyatsuji ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Electron Mobility ◽  
Phonon Scattering ◽  
Inversion Layer ◽  
Device Simulation ◽  
Electron States ◽  
Main Emphasis ◽  
Good Agreement ◽  
Monte Carlo Device Simulation

The electron mobility in the inversion layer of a MOSFET, formed on the (100) silicon surface, is calculated by using a Monte Carlo approach which takes into account size quantization, acoustic phonon scattering, intervalley phonon scattering and surface roughness scattering. Degeneracy is also considered because it is important at higher normal effective fields (high gate voltages). The main emphasis is placed on the influence of the specific autocovariance function, used to describe the surface roughness, on the electron mobility. It is found that the electron mobility calculated with roughness scattering rates based on the exponential function shows a good agreement with experiments. Device simulation of a MOSFET is carried out to demonstrate the usefulness of the present model, where 3D electron states are taken into account in addtion to the 2D electron states.

An Analytic Model for Electron Mobility in Strained Si/Si1-xGex nMOSFETs

2011 ◽  
Vol 317-319 ◽  
pp. 1168-1171
Author(s):  
Bin Li ◽  
Hong Xia Liu ◽  
Jin Li
Keyword(s):  
Film Thickness ◽  
Electron Mobility ◽  
Phonon Scattering ◽  
Inversion Layer ◽  
Mobility Model ◽  
Strained Si ◽  
Limited Mobility ◽  
Wide Range ◽  
Normal Electric Field ◽  
Electron Transport Properties

In order to describe electron transport properties in inversion layer of strained Si/Si1-xGex nMOSFETs, a new analytic electron mobility model is proposed. The model not only takes into account the effect of germanium(Ge) content on phonon scattering-limited mobility and surface roughness-limited mobility, and but also includes the degradation effect of strained Si film thickness and temperature on the device mobility. For various Ge content and a wide range of normal electric field, temperature and strained Si film thickness, the model provides good agreement with the experimental data in references. In addition, the model can be expressed using the analytical expression and can be easily included in the device simulator.

TRANSPORT IN A POLARIZATION-INDUCED 2D ELECTRON GAS

2001 ◽  
Vol 11 (02) ◽  
pp. 479-509 ◽  
Author(s):  
B. K. RIDLEY ◽  
N. A. ZAKHLENIUK
Keyword(s):  
Electron Transport ◽  
Phonon Scattering ◽  
Large Population ◽  
Hot Electron ◽  
Momentum Exchange ◽  
New Class ◽  
Electron Transport Properties ◽  
Energy And Momentum ◽  
Hot Electron Transport ◽  
First Time

AlGaN/GaN structures constitute a new class of 2D systems in that a large population of electrons can be produced without doping as a result of spontaneous and strain-induced polarization. Electron transport can, in principle, be mediated solely by phonon scattering and, for the first time, it is possible to realistically envisage the formation of a drifted Maxwellian or Fermi-Dirac distribution in hot-electron transport. We first describe a simple model that relates electron density in a heterostructure to barrier width and then explore electron-electron (e-e) energy and momentum exchange in some depth. We then illustrate the novel hot-electron transport properties that can arise when only phonon and e-e scattering are present. These include S-type NDR, electron cooling and squeezed electrons.

Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap

2020 ◽  
pp. 438-445 ◽  
Author(s):  
Carlos Sampedro ◽  
Cristina Medina-Bailon ◽  
Luca Donetti ◽  
Jose Luis Padilla ◽  
Carlos Navarro ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Ensemble Monte Carlo ◽  
Monte Carlo Simulator
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