scholarly journals Study of Electron Velocity Overshoot in NMOS Inversion Layers

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 429-435
Author(s):  
Wei-Kai Shih ◽  
Srinivas Jallepalli ◽  
Mahbub Rashed ◽  
Christine M. Maziar ◽  
Al. F. Tasch Jr.
Keyword(s):  
Monte Carlo ◽  
Carrier Transport ◽  
Inversion Layer ◽  
Effective Field ◽  
Electron Velocity ◽  
Lateral Field ◽  
Scattering Rate ◽  
Low Energy Electrons ◽  
Non Local ◽  
Spatially Varying

Non-local electron transport in nMOSFET inversion layers has been studied by Monte Carlo (MC) simulations. Inversion layer quantization has been explicitly included in the calculation of density of states and scattering rate for low-energy electrons while bulk band structure is used to describe the transport of more energetic electrons. For uniform, high-lateral field conditions, the effects of quantization are less pronounced due to the depopulation of electrons in the lower-lying subbands. On the other hand, Monte Carlo results for carrier transport in spatially varying lateral fields (such as those in the inversion layer of MOSFETs) clearly indicate that depopulation of the low-lying subbands is less evident in the non-local transport regime. Quasi-2D simulations have shown that, at high transverse effective field, the inclusion of a quantization domain does have an impact on the calculated spatial velocity transient.

scholarly journals Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 287-290
Author(s):  
J. B. Roldan ◽  
F. Gamiz ◽  
J. A. Lopez-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Monte Carlo ◽  
Inversion Layer ◽  
Channel Length ◽  
Electron Velocity ◽  
Normal Operation ◽  
Electron Dynamics ◽  
Drift Diffusion ◽  
Operation Conditions ◽  
Non Local ◽  
Monte Carlo Simulator

A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.

scholarly journals A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 257-260 ◽  
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva
Keyword(s):  
Monte Carlo ◽  
Phonon Scattering ◽  
Inversion Layer ◽  
Relaxation Times ◽  
Electron Velocity ◽  
Saturation Velocity ◽  
Electron Transport Properties ◽  
Effective Electric Field ◽  
Monte Carlo Simulator ◽  
Energy And Momentum

Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polaroptical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si MOSFETs. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher.

scholarly journals Non-local spatially varying finite mixture models for image segmentation

2021 ◽  
Vol 31 (1) ◽  
Author(s):  
Javier Juan-Albarracín ◽  
Elies Fuster-Garcia ◽  
Alfons Juan ◽  
Juan M. García-Gómez
Keyword(s):  
Image Segmentation ◽  
Mixture Models ◽  
Finite Mixture Models ◽  
Finite Mixture ◽  
Non Local ◽  
Spatially Varying

scholarly journals Interface junctions in QCD${}_4$

2021 ◽  
Vol 10 (4) ◽  
Author(s):  
Pranay Gorantla ◽  
Ho Tat Lam
Keyword(s):  
Effective Field Theories ◽  
Quantum Chromodynamics ◽  
Effective Field ◽  
Low Energy ◽  
Coupling Constants ◽  
Field Theories ◽  
Scalar Theory ◽  
Complex Mass ◽  
Spatially Varying ◽  
Chern Simons

We study 3+1 dimensional SU(N)SU(N) Quantum Chromodynamics (QCD) with N_fNf degenerate quarks that have a spatially varying complex mass. It leads to a network of interfaces connected by interface junctions. We use anomaly inflow to constrain these defects. Based on the chiral Lagrangian and the conjectures on the interfaces, characterized by a spatially varying \thetaθ-parameter, we propose a low-energy description of such networks of interfaces. Interestingly, we observe that the operators in the effective field theories on the junctions can carry baryon charges, and their spin and isospin representations coincide with baryons. We also study defects, characterized by spatially varying coupling constants, in 2+1 dimensional Chern-Simons-matter theories and in a 3+1 dimensional real scalar theory.

scholarly journals Spatially Varying Monte Carlo Sure for the Regularization of Biomedical Images

2019 ◽  
Author(s):  
Marco Pizzolato ◽  
Rachid Deriche ◽  
Erick Jorge Canales-Rodriguez ◽  
Jean-Philippe Thiran
Keyword(s):  
Monte Carlo ◽  
Biomedical Images ◽  
Spatially Varying
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