scholarly journals Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 287-290
Author(s):  
J. B. Roldan ◽  
F. Gamiz ◽  
J. A. Lopez-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Monte Carlo ◽  
Inversion Layer ◽  
Channel Length ◽  
Electron Velocity ◽  
Normal Operation ◽  
Electron Dynamics ◽  
Drift Diffusion ◽  
Operation Conditions ◽  
Non Local ◽  
Monte Carlo Simulator

A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.

scholarly journals Study of Electron Velocity Overshoot in NMOS Inversion Layers

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 429-435
Author(s):  
Wei-Kai Shih ◽  
Srinivas Jallepalli ◽  
Mahbub Rashed ◽  
Christine M. Maziar ◽  
Al. F. Tasch Jr.
Keyword(s):  
Monte Carlo ◽  
Carrier Transport ◽  
Inversion Layer ◽  
Effective Field ◽  
Electron Velocity ◽  
Lateral Field ◽  
Scattering Rate ◽  
Low Energy Electrons ◽  
Non Local ◽  
Spatially Varying

Non-local electron transport in nMOSFET inversion layers has been studied by Monte Carlo (MC) simulations. Inversion layer quantization has been explicitly included in the calculation of density of states and scattering rate for low-energy electrons while bulk band structure is used to describe the transport of more energetic electrons. For uniform, high-lateral field conditions, the effects of quantization are less pronounced due to the depopulation of electrons in the lower-lying subbands. On the other hand, Monte Carlo results for carrier transport in spatially varying lateral fields (such as those in the inversion layer of MOSFETs) clearly indicate that depopulation of the low-lying subbands is less evident in the non-local transport regime. Quasi-2D simulations have shown that, at high transverse effective field, the inclusion of a quantization domain does have an impact on the calculated spatial velocity transient.

scholarly journals A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 257-260 ◽  
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva
Keyword(s):  
Monte Carlo ◽  
Phonon Scattering ◽  
Inversion Layer ◽  
Relaxation Times ◽  
Electron Velocity ◽  
Saturation Velocity ◽  
Electron Transport Properties ◽  
Effective Electric Field ◽  
Monte Carlo Simulator ◽  
Energy And Momentum

Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polaroptical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si MOSFETs. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher.

scholarly journals Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 253-256
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva
Keyword(s):  
Monte Carlo ◽  
Performance Enhancement ◽  
Deep Submicron ◽  
Strained Si ◽  
Electron Transport Properties ◽  
Transport Effects ◽  
Non Local ◽  
Local Transport ◽  
Monte Carlo Simulator ◽  
The Impact

Electron transport properties of strained-Si on relaxed Si1 – xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electronvelocity- overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes.

scholarly journals Monte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 319-323
Author(s):  
A. Asenov ◽  
S. Babiker ◽  
S. P. Beaumont ◽  
J. R. Barker
Keyword(s):  
Monte Carlo ◽  
Mobility Model ◽  
Channel Length ◽  
Drift Diffusion ◽  
Short Channel ◽  
Velocity Overshoot ◽  
Saturation Velocity ◽  
Mc Simulation ◽  
Diffusion Simulation ◽  
Good Agreement

In this paper we present a methodology to use drift diffusion (DD) simulations in the design of short channel heterojunction FETs (HFETs) with well pronounced velocity overshoot. In the DD simulations the velocity overshoot in the channel is emulated by forcing the saturation velocity in the field dependent mobility model to values corresponding to the average velocity in the channel obtained from Monte Carlo (MC) simulation. To illustrate our approach we compare enhanced DD and MC simulation results for a pseudomorphic HEMTs with 0.12 μm channel length, which are in good agreement. The usefulness of the described methodology is illustrated in a simulation example of self aligned gamma gate pseudomorphic HEMTs. The effect of the gamma gate shape and the self aligned contacts on the overall device performance has been investigated.

Monte Carlo harmonic-balance and drift-diffusion harmonic-balance analyses of 100-600 GHz Schottky barrier varactor frequency multipliers

1997 ◽  
Vol 44 (11) ◽  
pp. 1843-1850 ◽  
Author(s):  
R.E. Lipsey ◽  
S.H. Jones ◽  
J.R. Jones ◽  
T.W. Crowe ◽  
L.F. Horvath ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Schottky Barrier ◽  
Harmonic Balance ◽  
Frequency Multipliers ◽  
Drift Diffusion
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