scholarly journals The Relationship Between the Electrical Properties of Thick Film Resistors and the Thermal Expansion Coefficient of the Substrates

1987 ◽  
Vol 12 (4) ◽  
pp. 251-257 ◽  
Author(s):  
Toshio Inokuma ◽  
Yoshiaki Taketa ◽  
Miyoshi Haradome
Keyword(s):  
Thermal Expansion ◽  
Electrical Properties ◽  
Low Temperature ◽  
Thick Film ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Film Resistor ◽  
Thick Film Resistor ◽  
The Relationship ◽  
Resistance Value

The temperature characteristics of RuO2-based thick film resistors on various substratcs having different thermal expansion coefficient have been investigated.It became clear that, if the thermal expansion coefficient of the substrate is larger than that of the thick film resistor, a compression is being exerted by the substrate on the as-fired resistor at low temperature. As temperature rises, the resistance value increases, and the TCR becomes positive.On the contrary, if the thermal expansion coefficient of the resistor is larger than that of the substrate, the as-fired resistor is being stretched by the substrate at low temperature. As temperature rises, the resistancc value decreases, and the TCR becomes negative.

Thermal Expansion and Laser Trim Stability of Ruthenium Based Thick Film Resistors on Alumina and on Multilayer Dielectric

1982 ◽  
Vol 1 (1) ◽  
pp. 24-27 ◽  
Author(s):  
I. Taitl
Keyword(s):  
Thermal Expansion ◽  
Thick Film ◽  
Chemical Structure ◽  
Coefficient Of Thermal Expansion ◽  
Ruthenium Dioxide ◽  
Theoretical Conclusion ◽  
Film Resistor ◽  
Thick Film Resistor ◽  
The Relationship ◽  
Multilayer Dielectric

Fired resistors exhibit variations which are minimised by abrasive and laser trimming. The latter may cause unstable behaviour which is further aggravated by thermal shock. The chemical structure of a thick film resistor is analysed with respect to mechanical stress, and the theoretical conclusion that the coefficient of thermal expansion of the resistor should be equal to or smaller than that of the substrate is verified experimentally. The thermal behaviour of ruthenium dioxide is examined and a range of CTE values are determined for materials of varying chemical composition. The relationship between CTE and post laser trimming stability is demonstrated on four thick film resistors which differ in thermal expansion. It is pointed out that formulations with high metallic content can absorb tensile stress by elastic deformation, thus minimising the formation or propagation of laser induced cracks.

scholarly journals The Effect of Various Factors on the Resistance and TCR of RuO2Thick Film Resistors—Relation Between the Electrical Properties and Particle Size of Constituents, the Physical Properties of Glass and Firing Temperature

1988 ◽  
Vol 13 (2) ◽  
pp. 67-83 ◽  
Author(s):  
Osamu Abe ◽  
Yoshiaki Taketa ◽  
Miyoshi Haradome
Keyword(s):  
Thermal Expansion ◽  
Electrical Properties ◽  
Thick Film ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Glass Particle ◽  
Particle Sizes ◽  
Resistance Change ◽  
Mixing Ratios ◽  
Thermal Expansion Coefficients

Thick film resistors were prepared with different variables, they included various conductive particle sizes, glass particle sizes, glass softening temperatures, thermal expansion coefficients of the glass, mixing ratios of the conductive element and glass, firing temperatures, firing cycles, etc. The relation between these factors and electrical properties of the thick film resistors was studied. As a result, it was found that when a specific glass is chosen, its R-TCR curve, which indicates the relation between resistance and TCR of a thick film resistor, is unconditionally fixed regardless of various preparation factors, and the R-TCR curve can be moved only by changing the thermal expansion coefficient of the glass. In addition, the higher the resistance and the larger the thermal expansion coefficient of glass, the larger the resistance change against the external force.

Evaluation of Glass Frits for Development of Lead-Free Thick Film Resistor

2010 ◽  
Vol 2010 (1) ◽  
pp. 000752-000759
Author(s):  
Xudong Chen ◽  
W. Kinzy Jones
Keyword(s):  
Electrical Properties ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Glass Frit ◽  
Lead Free ◽  
Temperature Coefficient Of Resistance ◽  
Film Resistor ◽  
Thick Film Resistor ◽  
Glass Compositions ◽  
Free Glass

Glass frit is a major component of thick film resistor (TFR) for the production of hybrid circuits. More than thirty commercial lead-free glass frits with different compositions have been evaluated for developing a lead-free thick film resistor that is compatible with typical industry thick film processing and has comparable electrical properties as the lead bearing counterpart. Two glass compositions were selected out of 33 candidates for preparation of RuO2 based TFR inks, which were screen printed on alumina substrates and fired at 850°C. The preliminary results of these resistors showed that the sheet resistance spanned from 400 ohms per square (Ω/□) to 0.4 mega-ohms per square (MΩ/□) with 5–15% RuO2 and the hot temperature coefficient of resistance (HTCR) fell in a range of ±350ppm/°C.

EFFECTS OF THERMAL EXPANSION COEFFICIENT MISMATCH ON STRUCTURE AND ELECTRICAL PROPERTIES OF TiO2 FILM DEPOSITED ON Si SUBSTRATE

2008 ◽  
Vol 15 (04) ◽  
pp. 487-491 ◽  
Author(s):  
CHEN YANG ◽  
HUIQING FAN ◽  
SHAOJUN QIU ◽  
YINGXUE XI ◽  
JIN CHEN
Keyword(s):  
Thermal Expansion ◽  
Electrical Properties ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Si Substrate ◽  
Cte Mismatch ◽  
Deposited Film ◽  
Thermal Expansion Coefficient Mismatch

Effects of thermal expansion coefficient (CTE) mismatch on structure and electrical properties of TiO 2 film deposited on Si substrate by ion beam assistant electron beam evaporation have been investigated. Because of a high CTE mismatch between TiO 2 film and Si substrate, microcracks appeared in the TiO 2 film deposited directly on Si substrate after the as-deposited film was annealed at 600°C. In order to decrease the CTE mismatch, TiO 2 film was deposited on Si substrate which was covered by a ZrO 2 thin layer. As a result, crack–free TiO 2 film after annealed at the same temperature was obtained. Meanwhile, corresponding to the crack–free structure, the TiO 2 thin film has more stable dielectric properties and excellent I–V characteristics.

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