Thermal Stability of HfTiOx Gate Dielectrics

2012 ◽  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectrics ◽  
Thermal Stability Of

Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering

2004 ◽  
Vol 84 (9) ◽  
pp. 1588-1590 ◽  
Author(s):  
J. F. Kang ◽  
H. Y. Yu ◽  
C. Ren ◽  
M.-F. Li ◽  
D. S. H. Chan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectrics ◽  
Reactive Sputtering ◽  
Thermal Stability Of

Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers

2007 ◽  
Vol 90 (20) ◽  
pp. 202102 ◽  
Author(s):  
Jungwoo Oh ◽  
Prashant Majhi ◽  
Chang Yong Kang ◽  
Ji-Woon Yang ◽  
Hsing-Huang Tseng ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Gate Dielectrics ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Epitaxial Layers ◽  
High K ◽  
Thermal Stability Of

Thermal stability of advanced gate stacks consisting of a Ru electrode and Hf-based gate dielectrics for CMOS technology

Vacuum ◽  
2007 ◽  
Vol 81 (10) ◽  
pp. 1379-1384 ◽  
Author(s):  
D. Machajdík ◽  
A.P. Kobzev ◽  
K. Hušeková ◽  
M. Ťapajna ◽  
K. Fro˝hlich ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectrics ◽  
Cmos Technology ◽  
Gate Stacks ◽  
Thermal Stability Of

Thermal stability of polycrystalline silicon electrodes on ZrO2 gate dielectrics

2002 ◽  
Vol 81 (8) ◽  
pp. 1417-1419 ◽  
Author(s):  
Charles M. Perkins ◽  
Baylor B. Triplett ◽  
Paul C. McIntyre ◽  
Krishna C. Saraswat ◽  
Eric Shero
Keyword(s):  
Thermal Stability ◽  
Polycrystalline Silicon ◽  
Gate Dielectrics ◽  
Thermal Stability Of

Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)

2011 ◽  
Vol 470 ◽  
pp. 152-157 ◽  
Author(s):  
Heiji Watanabe ◽  
Katsuhiro Kutsuki ◽  
Iori Hideshima ◽  
Gaku Okamoto ◽  
Takuji Hosoi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectrics ◽  
Oxide Thickness ◽  
Interface State ◽  
State Density ◽  
Air Exposure ◽  
Mos Capacitors ◽  
Plasma Nitridation ◽  
The Impact ◽  
Thermal Stability Of

We demonstrated the impact of plasma nitridation on thermally grown GeO2 for the purposes of obtaining high-quality germanium oxynitride (GeON) gate dielectrics. Physical characterizations revealed the formation of a nitrogen-rich surface layer on the ultrathin oxide, while keeping an abrupt GeO2/Ge interface without a transition layer. The thermal stability of the GeON layer was significantly improved over that of the pure oxide. We also found that although the GeO2 layer is vulnerable to air exposure, a nitrogen-rich layer suppresses electrical degradation and provides excellent insulating properties. Consequently, we were able to obtain Ge-MOS capacitors with GeON dielectrics of an equivalent oxide thickness (EOT) as small as 1.7 nm. Minimum interface state density (Dit) values of GeON/Ge structures, i.e., as low as 3 x 1011 cm-2eV-1, were successfully obtained for both the lower and upper halves of the bandgap.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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