Thermal stability of polycrystalline silicon electrodes on ZrO2 gate dielectrics

2002 ◽  
Vol 81 (8) ◽  
pp. 1417-1419 ◽  
Author(s):  
Charles M. Perkins ◽  
Baylor B. Triplett ◽  
Paul C. McIntyre ◽  
Krishna C. Saraswat ◽  
Eric Shero
Keyword(s):  
Thermal Stability ◽  
Polycrystalline Silicon ◽  
Gate Dielectrics ◽  
Thermal Stability Of

A Study on Thermal Stability of CoSi2Employing Novel Fine-Grained Polycrystalline Silicon/CoSi2/Si (001) System

2001 ◽  
Vol 40 (Part 1, No. 11) ◽  
pp. 6307-6310
Author(s):  
Jong-Uk Bae ◽  
Dong Kyun Sohn ◽  
Ji-Soo Park ◽  
Chang Hee Han ◽  
Jin Won Park ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Polycrystalline Silicon ◽  
Fine Grained ◽  
Thermal Stability Of

Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering

2004 ◽  
Vol 84 (9) ◽  
pp. 1588-1590 ◽  
Author(s):  
J. F. Kang ◽  
H. Y. Yu ◽  
C. Ren ◽  
M.-F. Li ◽  
D. S. H. Chan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectrics ◽  
Reactive Sputtering ◽  
Thermal Stability Of

Thermal Stability of CoSi2 on Single Crystal and Polycrystalline Silicon

1990 ◽  
Vol 182 ◽  
Author(s):  
J. R. Phillips ◽  
P. Revesz ◽  
J. O. Olowolafe ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Sheet Resistivity ◽  
X Ray ◽  
Resistivity Measurements ◽  
Silicide Layer ◽  
Thermal Stability Of ◽  
Scanning Electron

AbstractThe thermal stability of Co silicide on single crystal and polycrystalline Si has been investigated. Co films were evaporated onto (100) Si and undoped polycrystalline Si and annealed in vacuum. Resulting silicide films were examined using Rutherford backscattering spectroscopy, scanning electron microscopy, electron—induced x—ray spectroscopy, and sheet resistivity measurements. We find that CoSi2 on single crystal (100) Si remains stable through 1000ºC. In contact with undoped polycrystalline Si, intermixing begins at temperatures as low as 650ºC for 30min annealing. The Co silicide and Si layers are intermixed after 750ºC 30min annealing, giving islands of Si surrounded by silicide material, with both components extending from the surface down to the underlying oxide layer. The behavior of CoSi2 contrasts with results reported for TiSi2 which agglomerates on single crystal Si around 900ºC but is stable on polycrystalline silicon as high as 800ºC. Resistivity measurements show that the Co silicide remained interconnected despite massive incursion by Si into the silicide layer.

Thermal stability of TiSi2on mono‐ and polycrystalline silicon

1986 ◽  
Vol 60 (1) ◽  
pp. 243-246 ◽  
Author(s):  
C. Y. Wong ◽  
L. K. Wang ◽  
P. A. McFarland ◽  
C. Y. Ting
Keyword(s):  
Thermal Stability ◽  
Polycrystalline Silicon ◽  
Thermal Stability Of

Thermal stability of polycrystalline silicon/metal oxide interfaces

2002 ◽  
Vol 81 (22) ◽  
pp. 4157-4158 ◽  
Author(s):  
A. Callegari ◽  
E. Gousev ◽  
T. Zabel ◽  
D. Lacey ◽  
M. Gribelyuk ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
Oxide Interfaces ◽  
Thermal Stability Of

Thermal stability of TiSi2 films on single crystal and polycrystalline silicon

1991 ◽  
Vol 6 (7) ◽  
pp. 1502-1511 ◽  
Author(s):  
Krishna Shenai
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Temperature Stability ◽  
Process Variations ◽  
Titanium Silicide ◽  
High Temperature Stability ◽  
Crystal Silicon ◽  
Thermal Stability Of

The stability of selectively formed TiSi2 films on single crystal and polycrystalline silicon layers at elevated process temperatures is reported. Extensive electrical and analytical studies were performed to understand the high-temperature stability of TiSi2 films as a function of (i) substrate dopant concentration, (ii) titanium silicide thickness, (iii) silicide formation sequence, and (iv) silicide post-processing steps. It is shown that all four process variations have a profound influence on the thermal stability of TiSi2 films. It is observed that titanium silicide films formed on single crystal silicon are stable at higher processing temperatures compared to those formed on polysilicon substrates under similar conditions. The degradation of high-temperature stability of TiSi2 films on polycrystalline silicon can be related to increased number of defects and grain boundaries. It is shown that TiSi2 films can be successfully used in silicon integrated circuit applications where the post-silicide processing temperatures do not exceed 1000 °C.

Formation and Thermal Stability of Ti-Capped Co-silicide from Co-Ta Alloy Films on (100) Si and Polycrystalline Silicon

2002 ◽  
Vol 40 (4) ◽  
pp. 737 ◽  
Author(s):  
Kim Min-Joo ◽  
Choi Hyo-Jick ◽  
Ko Dae-Hong ◽  
Ku Ja-Hum ◽  
Choi Siyoung ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Polycrystalline Silicon ◽  
Alloy Films ◽  
Thermal Stability Of
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