Characteristics of In Situ Hydrogen Treated SiNx films for Gate Dielectric of Silicon-Based Bottom Gate TFTs Fabricated at a Low-Temperature({less than or equal to}150 °) by Cat-CVD

2011 ◽  
Keyword(s):  
Low Temperature ◽  
Gate Dielectric ◽  
Silicon Based ◽  
Bottom Gate

Cmos Polysilicon Thin Film Transistors with Simultaneously Deposited Layers for Source-Drain and Gate

1990 ◽  
Vol 182 ◽  
Author(s):  
T. Y. Huang ◽  
C. C. Tsai ◽  
I. W. Wu ◽  
A. G. Lewis ◽  
A. Chiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Bottom Layer ◽  
New Process ◽  
Process Architecture ◽  
Bottom Gate ◽  
Gate Layer

AbstractA new process architecture for fabricating CMOS thin film transistors (TFTs) using in-situ-doped polysilicon source-drain layers is proposed. In the new architecture, a top-gate n-channel TFT and a bottom-gate p-channel TFT, or vice versa, form a CMOS pair. This allows an n+ - doped polysilicon bottom (or top) layer to serve simultaneously as the source-drain layer of the n-channel TFTs and the gate layer of the p-channel TFTs; while a p+ - doped polysilicon top (or bottom) layer serves as the source-drain layer of the p-channel TFT and the gate layer of the n-channel TFT. It thus eliminates the deposition of a separate doped gate layer normally required in the conventional process flow. In addition, a thin tri-layer stack, consisting of undoped-poly / gate dielectric / undoped-poly, separates the two doped polysilicon layers, thus allowing the use of a single island mask to define the channel regions for both the n- and p-channel TFTs. As a result, the photolithographic steps are also reduced by one mask. Working n- and p-channel TFTs with both top- and bottomgate structures, obtained by reversing the dopant types of the top and the bottom layers, have been successfully demonstrated using low-temperature (< 600 °C) polysilicon technology.

In-situ low-temperature synthesis of PS-ZrO2 hybrid films and their characterization for high-k gate dielectric application

2021 ◽  
Vol 154 ◽  
pp. 106188
Author(s):  
Diana Sánchez-Ahumada ◽  
Libia Judith Verastica-Ward ◽  
Martín Orozco ◽  
Diana Vargas-Hernández ◽  
Andrés Castro-Beltrán ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gate Dielectric ◽  
Hybrid Films ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
High K ◽  
High K Gate Dielectric

Effect of Atomic Hydrogen in SiNx Films for Gate Dielectric of Silicon-Based TFTs Fabricated at a Low-Temperature(≤150 °) by Cat-CVD

2019 ◽  
Vol 35 (31) ◽  
pp. 73-76
Author(s):  
Ki-Su Keum ◽  
Kyoung-Min Lee ◽  
Jae-Dam Hwang ◽  
Kil-Sun No ◽  
Wan-Shick Hong
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Gate Dielectric ◽  
Silicon Based

In situ Tensile Experiments at Low Temperatures on Niobium Single Crystals by H.V.E.M.

1975 ◽  
Vol 33 ◽  
pp. 58-59
Author(s):  
F. H. Louchet ◽  
L. P. Kubin
Keyword(s):  
Electron Microscope ◽  
Transition Temperature ◽  
Low Temperature ◽  
Slip System ◽  
Low Temperatures ◽  
Tensile Axis ◽  
Image Intensifier ◽  
Screw Dislocations ◽  
Source Operation

Experiments have been carried out on the 3 MeV electron microscope in Toulouse. The low temperature straining holder has been previously described Images given by an image intensifier are recorded on magnetic tape.The microtensile niobium samples are cut in a plane with the two operative slip directions [111] and lying in the foil plane. The tensile axis is near [011].Our results concern:- The transition temperature of niobium near 220 K: at this temperature and below an increasing difference appears between the mobilities of the screw and edge portions of dislocations loops. Source operation and interactions between screw dislocations of different slip system have been recorded.

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

scholarly journals Insight into the Promoting Role of Er Modification on SO2 Resistance for NH3-SCR at Low Temperature over FeMn/TiO2 Catalysts

Catalysts ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 618
Author(s):  
Huan Du ◽  
Zhitao Han ◽  
Xitian Wu ◽  
Chenglong Li ◽  
Yu Gao ◽  
...  
Keyword(s):  
Low Temperature ◽  
Catalyst Surface ◽  
Impregnation Method ◽  
In Situ Drifts ◽  
Tio2 Catalyst ◽  
Nh3 Scr ◽  
Nh3 Adsorption ◽  
So2 Resistance ◽  
Fast Scr

Er-modified FeMn/TiO2 catalysts were prepared through the wet impregnation method, and their NH3-SCR activities were tested. The results showed that Er modification could obviously promote SO2 resistance of FeMn/TiO2 catalysts at a low temperature. The promoting effect and mechanism were explored in detail using various techniques, such as BET, XRD, H2-TPR, XPS, TG, and in-situ DRIFTS. The characterization results indicated that Er modification on FeMn/TiO2 catalysts could increase the Mn4+ concentration and surface chemisorbed labile oxygen ratio, which was favorable for NO oxidation to NO2, further accelerating low-temperature SCR activity through the “fast SCR” reaction. As fast SCR reaction could accelerate the consumption of adsorbed NH3 species, it would benefit to restrain the competitive adsorption of SO2 and limit the reaction between adsorbed SO2 and NH3 species. XPS results indicated that ammonium sulfates and Mn sulfates formed were found on Er-modified FeMn/TiO2 catalyst surface seemed much less than those on FeMn/TiO2 catalyst surface, suggested that Er modification was helpful for reducing the generation or deposition of sulfate salts on the catalyst surface. According to in-situ DRIFTS the results of, the presence of SO2 in feeding gas imposed a stronger impact on the NO adsorption than NH3 adsorption on Lewis acid sites of Er-modified FeMn/TiO2 catalysts, gradually making NH3-SCR reaction to proceed in E–R mechanism rather than L–H mechanism. DRIFTS.

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