Effect of In Situ Hydrogen Annealing on Dielectric Property of a Low Temperature Silicon Nitride Layer in a Bottom-Gate Nanocrystalline Silicon TFT by Catalytic CVD

2019 ◽  
Vol 28 (1) ◽  
pp. 395-399 ◽  
Author(s):  
Youn-Jin Lee ◽  
Kyoung-Min Lee ◽  
Jae-Dam Hwang ◽  
Kil-Sun No ◽  
Wan-Shick Hong
Keyword(s):  
Silicon Nitride ◽  
Dielectric Property ◽  
Low Temperature ◽  
Nanocrystalline Silicon ◽  
Nitride Layer ◽  
Hydrogen Annealing ◽  
Silicon Nitride Layer ◽  
Bottom Gate ◽  
Catalytic Cvd

The Characterization of Bottom-gate Thin Film Transistors adapted Nanocrystalline Silicon as Active Layer by Catalytic CVD at Low Temperature

2019 ◽  
Vol 25 (3) ◽  
pp. 259-262
Author(s):  
Youn-Jin Lee ◽  
Kyoung-Min Lee ◽  
Jae-Dam Hwang ◽  
Kil-Sun No ◽  
Kap Soo Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Bottom Gate ◽  
Catalytic Cvd

Studies on a Novel Qualification Method of Silicon Nitride Layer

2016 ◽  
Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Substrate ◽  
Nitride Layer ◽  
Passivation Layer ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Si3n4 Layer ◽  
Silicon Nitride Layer ◽  
Passivation Layers ◽  
Pinhole Test

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.

Characterization of immobilized urease membrane on silicon nitride layer

1988 ◽  
Vol 43 (3) ◽  
pp. 293-301 ◽  
Author(s):  
Eiichi Tamiya ◽  
Masao Gotoh ◽  
Tomoko Matsui ◽  
Masayuki Tanaka ◽  
Isao Karube
Keyword(s):  
Silicon Nitride ◽  
Nitride Layer ◽  
Silicon Nitride Layer
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