Piezoelectric Field in Semi-Polar InGaN/GaN Quantum Wells

2009 ◽  
Keyword(s):  
Quantum Wells ◽  
Piezoelectric Field

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

2016 ◽  
Vol 108 (8) ◽  
pp. 082103 ◽  
Author(s):  
S. Azaizia ◽  
A. Balocchi ◽  
H. Carrère ◽  
P. Renucci ◽  
T. Amand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Piezoelectric Field

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

Effects of strain-control layers on piezoelectric field and indium incorporation in InGaN/GaN blue quantum wells

2010 ◽  
Vol 4 (8-9) ◽  
pp. 221-223 ◽  
Author(s):  
Jae-Ho Song ◽  
Yanqun Dong ◽  
Ho-Jong Kim ◽  
Byung-Jun Ahn ◽  
Tae-Soo Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Control ◽  
Piezoelectric Field

Magnitude of the piezoelectric field in (111)B InyGa1−yAs strained‐layer quantum wells

1993 ◽  
Vol 74 (7) ◽  
pp. 4681-4684 ◽  
Author(s):  
T. S. Moise ◽  
L. J. Guido ◽  
R. C. Barker
Keyword(s):  
Quantum Wells ◽  
Strained Layer ◽  
Piezoelectric Field

scholarly journals The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1−xN quantum wells

2000 ◽  
Vol 5 (1) ◽  
Author(s):  
N. A. Shapiro ◽  
Piotr Perlin ◽  
Christian Kisielowski ◽  
L. S. Mattos ◽  
J. W. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Chemical Properties ◽  
Major Effect ◽  
Atomic Scale ◽  
Luminescence Properties ◽  
Recombination Energy ◽  
Indium Concentration ◽  
Piezoelectric Field ◽  
And Chemical Properties

A correlation of the local indium concentration measured on an atomic scale with luminescence properties of InxGa1−xN quantum wells reveals two different types of recombination mechanisms. A piezoelectric-field based mechanism is shown to dominate in samples with thick wells (L > 3 nm) of low indium concentration (x < 0.15−0.20). Spatial indium concentration fluctuations dominate luminescence properties in samples of higher indium concentrations in thinner wells. Quantum confinement is shown to have a major effect on the radiative recombination energy. A model is presented that relates the experimentally measured nano scale structural and chemical properties of quantum wells to the characteristics of the luminescence.

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