Magnitude of the piezoelectric field in (111)B InyGa1−yAs strained‐layer quantum wells

1993 ◽  
Vol 74 (7) ◽  
pp. 4681-4684 ◽  
Author(s):  
T. S. Moise ◽  
L. J. Guido ◽  
R. C. Barker
Keyword(s):  
Quantum Wells ◽  
Strained Layer ◽  
Piezoelectric Field

SOME INVESTIGATIONS OF THE PHYSICAL PROPERTIES OF (Ga, In)As-GaAs HETEROSTRUCTURES GROWN WITH BUILT-IN PIEZOELECTRIC FIELD

1995 ◽  
Vol 09 (09) ◽  
pp. 1025-1044 ◽  
Author(s):  
B. GIL ◽  
P. BIGENWALD ◽  
K.J. MOORE ◽  
P. BORING ◽  
K. WOODBRIDGE
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Binding Energies ◽  
Double Quantum ◽  
Many Body ◽  
Charge Effects ◽  
Strained Layer ◽  
Piezoelectric Field ◽  
Many Body Interactions ◽  
Piezo Electric

The properties of single and double (Ga,ln)As-GaAs strained-layer quantum wells embedded in (pin) diodes are studied. These properties are found to be orientation-dependent, mainly due to the existence of a strong internal piezoelectric field in the (Ga,ln)As layers when the growth axis is polar. We first calculate how large the influences of the (pin) and piezoelectric field are to produce carrier tunnelling out of the active part of the heterostructure. This enables us to compute the carrier’s lifetime in the heterostructures and the corresponding resonance widths. Next, we compare the binding energies of interacting electron and hole pairs in double quantum wells with or without internal piezo electric fields. We show that the exciton binding energy is less sensitive to the piezoelectric field than the oscillator strength. Under photo excitation, many body-effects and bandgap renormalization can be easily produced in strained-layer quantum wells with internal built-in piezo-electric fields. We illuminated at low temperature single and double Ga 0.92 ln 0.08 As-GaAs strained layer quantum wells grown either along the (001) or (111) direction, and tuned over several decades the densities of photo-injected carriers. The comparison between experimental data and the results of a Hartree calculation including the space charge effects reveals that many body interactions are efficiently photo-induced in the (111)-grown samples. Moreover, we show that the tunnelling of the two lowest-lying heavy-hole levels can be stimulated for moderate carrier densities making such structures promissive in order to realise self electrooptic effect device (SEED) modulators.

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

2016 ◽  
Vol 108 (8) ◽  
pp. 082103 ◽  
Author(s):  
S. Azaizia ◽  
A. Balocchi ◽  
H. Carrère ◽  
P. Renucci ◽  
T. Amand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Piezoelectric Field

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

Exchange and correlation effects in strained-layer semiconductor quantum wells

2004 ◽  
Vol 241 (5) ◽  
pp. 1046-1052
Author(s):  
C. Tong ◽  
M. R. Kim ◽  
S. K. Kim ◽  
B. H. Han ◽  
J. K. Rhee
Keyword(s):  
Quantum Wells ◽  
Correlation Effects ◽  
Strained Layer ◽  
Semiconductor Quantum Wells ◽  
Exchange And Correlation

Effects of strain-control layers on piezoelectric field and indium incorporation in InGaN/GaN blue quantum wells

2010 ◽  
Vol 4 (8-9) ◽  
pp. 221-223 ◽  
Author(s):  
Jae-Ho Song ◽  
Yanqun Dong ◽  
Ho-Jong Kim ◽  
Byung-Jun Ahn ◽  
Tae-Soo Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Control ◽  
Piezoelectric Field

Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells

1992 ◽  
Vol 31 (Part 1, No. 11) ◽  
pp. 3608-3614 ◽  
Author(s):  
Yi-hong Wu ◽  
Kunio Ichino ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Strained Layer

1.55 μm High Speed Partly Gain-Coupled DFB Lasers with Periodically Etched Strained-Layer Quantum Wells

1997 ◽  
Vol 08 (03) ◽  
pp. 475-494 ◽  
Author(s):  
Toshihiko Makino
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Carrier Transport ◽  
Stop Band ◽  
Longitudinal Distribution ◽  
Modulation Bandwidth ◽  
Carrier Injection ◽  
Strained Layer ◽  
High Modulation ◽  
Dfb Laser

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.

Electronic States in Cd1−xZnxTe/CdTe Strained Layer Coupled Double Quantum Wells and their Photoluminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
Tiesheng Li ◽  
H. J. Lozykowski
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Lattice Mismatch ◽  
Electronic States ◽  
Double Quantum ◽  
Strain Effect ◽  
Strained Layer ◽  
Quantum Well Structure ◽  
Double Quantum Well ◽  
Theoretical Investigations

ABSTRACTExperimental and theoretical investigations of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice mismatched heterostructure were characterized by photoluminescence (PL), PL excitation and polarization spectroscopies. The influence of electrical field on exciton states in the strained layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.

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