Enhanced Hydrogen Detection Sensitivity of Semipolar (112¯2) GaN Schottky Diodes by Surface Wet Etching on Schottky Contact

2016 ◽  
Vol 163 (8) ◽  
pp. B456-B459 ◽  
Author(s):  
Soohwan Jang ◽  
Jimin Kim ◽  
Kwang Hyeon Baik
Keyword(s):  
Schottky Diodes ◽  
Schottky Contact ◽  
Wet Etching ◽  
Detection Sensitivity ◽  
Hydrogen Detection

Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

2009 ◽  
Vol 94 (21) ◽  
pp. 212108 ◽  
Author(s):  
Yu-Lin Wang ◽  
F. Ren ◽  
U. Zhang ◽  
Q. Sun ◽  
C. D. Yerino ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Detection Sensitivity ◽  
Hydrogen Detection

Erratum: “Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes” [Appl. Phys. Lett. 94, 212108 (2009)]

2009 ◽  
Vol 95 (1) ◽  
pp. 019903 ◽  
Author(s):  
Yu-Lin Wang ◽  
F. Ren ◽  
Yu Zhang ◽  
Q. Sun ◽  
C. D. Yerino ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Detection Sensitivity ◽  
Hydrogen Detection

scholarly journals 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

Sensors ◽  
2021 ◽  
Vol 21 (3) ◽  
pp. 942
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Philippe Godignon ◽  
...  
Keyword(s):  
Low Cost ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
High Sensitivity ◽  
Xrd Analysis ◽  
Absolute Temperature ◽  
Lower Sensitivity ◽  
Readout Circuit ◽  
Sensing Element ◽  
High Performing

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni2Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (p-diode) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R2 reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.

scholarly journals Device Design Assessment of GaN Merged P-i-N Schottky Diodes

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1550 ◽  
Author(s):  
Yuliang Zhang ◽  
Xing Lu ◽  
Xinbo Zou
Keyword(s):  
Breakdown Voltage ◽  
Computer Aided Design ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Background Concentration ◽  
Model Parameters ◽  
Design Assessment ◽  
Blocking Voltage ◽  
Aided Design ◽  
Drift Layer

Device characteristics of GaN merged P-i-N Schottky (MPS) diodes were evaluated and studied via two-dimensional technology computer-aided design (TCAD) after calibrating model parameters and critical electrical fields with experimental proven results. The device’s physical dimensions and drift layer concentration were varied to study their influence on the device’s performance. Extending the inter-p-GaN region distance or the Schottky contact portion could enhance the forward conduction capability; however, this leads to compromised electrical field screening effects from neighboring PN junctions, as well as reduced breakdown voltage. By reducing the drift layer background concentration, a higher breakdown voltage was expected for MPSs, as a larger portion of the drift layer itself could be depleted for sustaining vertical reverse voltage. However, lowering the drift layer concentration would also result in a reduction in forward conduction capability. The method and results of this study provide a guideline for designing MPS diodes with target blocking voltage and forward conduction at a low bias.

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

2015 ◽  
Vol 821-823 ◽  
pp. 436-439 ◽  
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
...  
Keyword(s):  
Barrier Height ◽  
Temperature Sensor ◽  
High Performance ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Post Annealing ◽  
Schottky Device ◽  
Post Annealing Temperature

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.

Effect of Coated Platinum Thickness on Hydrogen Detection Sensitivity of Graphene-Based Sensors

2011 ◽  
Vol 14 (7) ◽  
pp. K43 ◽  
Author(s):  
Byung Hwan Chu ◽  
Justin Nicolosi ◽  
C. F. Lo ◽  
W. Strupinski ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Detection Sensitivity ◽  
Hydrogen Detection

Contact-Related Deep States in AI-GaInP/GaAs Interface

1993 ◽  
Vol 325 ◽  
Author(s):  
Z.C. Huang ◽  
C.R. Wie
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Oxygen Contamination ◽  
Related Defect ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Recombination Current

AbstractDeep levels have been measured in molecular beam epitaxy grown Ga0.51In0.49P/GaAs heterostructure by double correlation deep level transient spectroscopy. Gold(Au) and Aluminum (Al) metals were used for Schottky contact. A contact-related hole trap with an activation energy of 0.50-0.75eV was observed at the A1/GaInP interface, but not at the Au/GaInP interface. To our knowledge, this contact-related trap has not been reported before. We attribute this trap to the oxygen contamination, or a vacancy-related defect, VIn or VGa. A new electron trap at 0.28eV was also observed in both Au- and Al-Schottky diodes. Its depth profile showed that it is a bulk trap in GaInP epilayer. The temperature dependent current-voltage characteristics (I-V-T) show a large interface recombination current at the GaInP surface due to the Al-contact. Concentration of the interface trap and the magnitude of recombination current are both reduced by a rapid thermal annealing at/or above 450°C after the aluminum deposition.

scholarly journals Synthesis and characterization of TiO2 nanotube Schottky diodes

2021 ◽  
Author(s):  
◽  
Mach Robert Michaels
Keyword(s):  
Thermal Treatment ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Building Blocks ◽  
Electrochemical Anodization ◽  
Structural Defects ◽  
Oxide Material ◽  
Semiconductor Interface ◽  
Shunt Resistance ◽  
Tio2 Nts

Metal-semiconductor interfaces on one-dimensional (1D) nanostructures represent crucial building blocks for next-generation nanoelectronics. Over the past two decades, chemically synthesized titanium dioxide nanotubes (TiO2-NTs) have gained a considerable amount of interest due to their high specific surface areas, tunable geometries, and favorable electrical properties. Explored for a variety of applications such as solar cells, hydrogen production, memristors, and batteries, TiO2 is a transition metal oxide material that contains unique wide-bandgap semiconductor properties. This research seeks to fabricate a conformal, rectifying metal-semiconductor interface, or Schottky junction, throughout an ordered array of semiconducting nanotubes. The atomic layer deposition (ALD) technique offers a precise, conformal growth mechanism and was used to deposit a continuous platinum (Pt) Schottky contact throughout the inner walls of the TiO2-NTs. Any defects found in the nanotubes, such as cracks, led to Pt atoms reaching all areas, forming an electrical short between the anode and cathode. To address this issue, initial experiments were centered on synthesizing defect-free, ordered TiO2-NT arrays using electrochemical anodization as it offers precise geometric control over the NT growth. Fabrication parameters, such as anodization time, electrolyte concentrations, and annealing environments, were investigated until the resulting NTs were free from structural defects. Demonstrated with low vacuum annealing, oxygen vacant, nonstoichiometric TiO2 was synthesized and investigated as a diode material. By comparing the current-voltage characteristics between stoichiometric and nonstoichiometric TiO2 diodes, we find that the oxygen vacant, nonstoichiometric TiO2 diodes displayed an improved ideality factor from 3.7 to 2.4. A 350 [degrees] C post-fabrication thermal treatment, however, led to both stoichiometric and nonstoichiometric TiO2 diodes having similar ideality factors of 2.0 and similar shifts in trap concentration and depth. Nonstoichiometric TiO2 devices exhibited a unique shunt conduction regime after thermal treatment where the shunt resistance was found to be on the order of 105 [omega]. These results present valuable experimental observations into understanding the effects of oxygen vacancies in TiO2 and effectively modifying the electronic properties of a conformal Pt/TiO2 nanostructured junction using a facile post-fabrication thermal treatment.

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