Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

2009 ◽  
Vol 94 (21) ◽  
pp. 212108 ◽  
Author(s):  
Yu-Lin Wang ◽  
F. Ren ◽  
U. Zhang ◽  
Q. Sun ◽  
C. D. Yerino ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Detection Sensitivity ◽  
Hydrogen Detection

Erratum: “Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes” [Appl. Phys. Lett. 94, 212108 (2009)]

2009 ◽  
Vol 95 (1) ◽  
pp. 019903 ◽  
Author(s):  
Yu-Lin Wang ◽  
F. Ren ◽  
Yu Zhang ◽  
Q. Sun ◽  
C. D. Yerino ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Detection Sensitivity ◽  
Hydrogen Detection

Effect of Coated Platinum Thickness on Hydrogen Detection Sensitivity of Graphene-Based Sensors

2011 ◽  
Vol 14 (7) ◽  
pp. K43 ◽  
Author(s):  
Byung Hwan Chu ◽  
Justin Nicolosi ◽  
C. F. Lo ◽  
W. Strupinski ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Detection Sensitivity ◽  
Hydrogen Detection

Palladium configuration dependence of hydrogen detection sensitivity based on graphene FET for breath analysis

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FP05 ◽  
Author(s):  
Yuri Sakamoto ◽  
Kohei Uemura ◽  
Takashi Ikuta ◽  
Kenzo Maehashi
Keyword(s):  
Breath Analysis ◽  
Detection Sensitivity ◽  
Hydrogen Detection ◽  
Graphene Fet

Hydrogen Detection by a GaAs-Based Transistor with a Palladium (Pd) Thin Film Gate Structure

2006 ◽  
Vol 15-17 ◽  
pp. 275-280 ◽  
Author(s):  
C.W. Hung ◽  
S.Y. Cheng ◽  
Kun Wei Lin ◽  
Y.Y. Tsai ◽  
P.H. Lai ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Hydrogen Sensor ◽  
Detection Sensitivity ◽  
Density Level ◽  
Hydrogen Atoms ◽  
Hydrogen Detection ◽  
High Hydrogen ◽  
Sensor Applications ◽  
Hydrogen Molecules

By combining the advantages of a catalytic palladium (Pd thin film) with a high-performance GaAs-based transistor, an interesting hydrogen sensor is fabricated and demonstrated. For the studied device, a 50 Å undoped GaAs cap layer is grown to prevent the Al0.24Ga0.76As Schottky layer from oxidizing and to suppress the Fermi level pinning effect. The sensing mechanism can be described as the dissociation of hydrogen molecules and the polarization of hydrogen atoms. The drain-source variation ΔIDS is caused by the polarization of a dipolar layer resulting in the modulation of the gate potential and carrier density level. Experimentally, a high hydrogen detection sensitivity SJ value of 275.8 mA/mm-ppm H2/air can be obtained under the 14ppm H2/air gas. Even under a very low hydrogen concentration (≤4.3 ppm H2/air) at 303K, the considerable current variation can be observed. Moreover, the fast hydrogen response is found. Therefore, the studied device reveals the promise for high-performance hydrogen sensor applications.

Palladium/cadmium‐sulfide Schottky diodes for hydrogen detection

1976 ◽  
Vol 28 (11) ◽  
pp. 687-688 ◽  
Author(s):  
Martin C. Steele ◽  
Bernard A. MacIver
Keyword(s):  
Cadmium Sulfide ◽  
Schottky Diodes ◽  
Hydrogen Detection

Improved hydrogen detection sensitivity of a Pt/Ga 2 O 3 /GaN diode

2009 ◽  
Author(s):  
Jheng-Tai Yan ◽  
Chun-Yen Tseng ◽  
Chia-Hsun Chen ◽  
Ching-Ting Lee
Keyword(s):  
Detection Sensitivity ◽  
Hydrogen Detection
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