Behaviors of Chloride Ions in Methanesulfonic Acid Bath for Copper Electrodeposition of Through-Silicon-Via

2013 ◽  
Vol 160 (4) ◽  
pp. D146-D149 ◽  
Author(s):  
Haiyong Cao ◽  
Tao Hang ◽  
Huiqin Ling ◽  
Ming Li
Keyword(s):  
Methanesulfonic Acid ◽  
Chloride Ions ◽  
Copper Electrodeposition ◽  
Through Silicon Via ◽  
Acid Bath

High Speed Copper Electrodeposition for Through Silicon Via(TSV)

2019 ◽  
Vol 25 (38) ◽  
pp. 127-131
Author(s):  
Kazuo Kondo ◽  
Yushi Suzuki ◽  
Takeyasu Saito ◽  
Naoki Okamoto
Keyword(s):  
High Speed ◽  
Copper Electrodeposition ◽  
Through Silicon Via

Retraction: Copper Electrodeposition in Through-Silicon Via under Galvanostatic Condition [J. Electrochem. Soc., 163, D694 (2016)]

2016 ◽  
Vol 164 (2) ◽  
pp. X2-X2
Author(s):  
Wei Luo ◽  
Zhipeng Chen ◽  
Junhong Zhang ◽  
Ying Zhu ◽  
Liming Gao ◽  
...  
Keyword(s):  
Copper Electrodeposition ◽  
Through Silicon Via ◽  
Galvanostatic Condition

Parameters determination for modelling of copper electrodeposition in through-silicon-via with additives

2018 ◽  
Vol 196 ◽  
pp. 25-31 ◽  
Author(s):  
Yan Wang ◽  
Xin Deng ◽  
Xinyu Ren ◽  
Xiang Li ◽  
Fuliang Wang ◽  
...  
Keyword(s):  
Copper Electrodeposition ◽  
Through Silicon Via

(Invited) High Speed Copper Electrodeposition for Through Silicon Via(TSV)

2019 ◽  
Vol 41 (43) ◽  
pp. 45-51 ◽  
Author(s):  
Taro Hayashi ◽  
Kazuo Kondo ◽  
Minoru Takeuchi ◽  
Yushi Suzuki ◽  
Takeyasu Saito ◽  
...  
Keyword(s):  
High Speed ◽  
Copper Electrodeposition ◽  
Through Silicon Via
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