High Speed Copper Electrodeposition for Through Silicon Via(TSV)

2019 ◽  
Vol 25 (38) ◽  
pp. 127-131
Author(s):  
Kazuo Kondo ◽  
Yushi Suzuki ◽  
Takeyasu Saito ◽  
Naoki Okamoto
Keyword(s):  
High Speed ◽  
Copper Electrodeposition ◽  
Through Silicon Via

(Invited) High Speed Copper Electrodeposition for Through Silicon Via(TSV)

2019 ◽  
Vol 41 (43) ◽  
pp. 45-51 ◽  
Author(s):  
Taro Hayashi ◽  
Kazuo Kondo ◽  
Minoru Takeuchi ◽  
Yushi Suzuki ◽  
Takeyasu Saito ◽  
...  
Keyword(s):  
High Speed ◽  
Copper Electrodeposition ◽  
Through Silicon Via

High Speed Through Silicon Via Filling by Copper Electrodeposition

2010 ◽  
Vol 13 (5) ◽  
pp. D26 ◽  
Author(s):  
Kazuo Kondo ◽  
Yushi Suzuki ◽  
Takeyasu Saito ◽  
Naoki Okamoto ◽  
Minoru Takauchi
Keyword(s):  
High Speed ◽  
Copper Electrodeposition ◽  
Through Silicon Via

High-speed and high-quality TSV filling with the direct ultrasonic agitation for copper electrodeposition

2017 ◽  
Vol 180 ◽  
pp. 30-34 ◽  
Author(s):  
Fuliang Wang ◽  
Peng Zeng ◽  
Yan Wang ◽  
Xinyu Ren ◽  
Hongbin Xiao ◽  
...  
Keyword(s):  
High Speed ◽  
Copper Electrodeposition ◽  
High Quality ◽  
Ultrasonic Agitation

High-Speed Through Silicon Via(TSV) Filling Using Diallylamine Additive

2011 ◽  
Vol 158 (12) ◽  
pp. D715 ◽  
Author(s):  
Taro Hayashi ◽  
Kazuo Kondo ◽  
Takeyasu Saito ◽  
Minoru Takeuchi ◽  
Naoki Okamoto
Keyword(s):  
High Speed ◽  
Through Silicon Via

Retraction: Copper Electrodeposition in Through-Silicon Via under Galvanostatic Condition [J. Electrochem. Soc., 163, D694 (2016)]

2016 ◽  
Vol 164 (2) ◽  
pp. X2-X2
Author(s):  
Wei Luo ◽  
Zhipeng Chen ◽  
Junhong Zhang ◽  
Ying Zhu ◽  
Liming Gao ◽  
...  
Keyword(s):  
Copper Electrodeposition ◽  
Through Silicon Via ◽  
Galvanostatic Condition

Parameters determination for modelling of copper electrodeposition in through-silicon-via with additives

2018 ◽  
Vol 196 ◽  
pp. 25-31 ◽  
Author(s):  
Yan Wang ◽  
Xin Deng ◽  
Xinyu Ren ◽  
Xiang Li ◽  
Fuliang Wang ◽  
...  
Keyword(s):  
Copper Electrodeposition ◽  
Through Silicon Via

Effect of Through-Silicon-Via Joule Heating on Device Performance for Low-Powered Mobile Applications

2014 ◽  
Vol 136 (4) ◽  
Author(s):  
Fahad Mirza ◽  
Gaurang Naware ◽  
Ankur Jain ◽  
Dereje Agonafer
Keyword(s):  
Joule Heating ◽  
Mobile Applications ◽  
High Speed ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Junction Temperature ◽  
Device Performance ◽  
Through Silicon Via ◽  
Heterogeneous Devices ◽  
Efficient Integration

Three-dimensional (3D) through-silicon-via (TSV) technology is emerging as a powerful technology to reduce package footprint, decrease interconnection power, higher frequencies, and provide efficient integration of heterogeneous devices. TSVs provide high speed signal propagation due to reduced interconnect lengths as compared to wire-bonding. The current flowing through the TSVs results in localized heat generation (joule heating), which could be detrimental to the device performance. The effect of joule heating on performance measured by transconductance, electron mobility (e− mobility), and channel thermal noise is presented. Results indicate that joule heating has a significant effect on the junction temperature and subsequently results in 10–15% performance hit.

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