High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

2010 ◽  
Vol 207 (9) ◽  
pp. 2088-2092 ◽  
Author(s):  
Pierre-Nicolas Volpe ◽  
Pierre Muret ◽  
Julien Pernot ◽  
Franck Omnès ◽  
Tokuyuki Teraji ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Cvd Diamond ◽  
Diamond Layer ◽  
High Breakdown Voltage ◽  
P Type

scholarly journals Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes

2019 ◽  
Vol 8 (7) ◽  
pp. Q3229-Q3234 ◽  
Author(s):  
Yen-Ting Chen ◽  
Jiancheng Yang ◽  
Fan Ren ◽  
Chin-Wei Chang ◽  
Jenshan Lin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Switching Circuit ◽  
High Breakdown Voltage

scholarly journals GaN Micropillar Schottky Diodes with High Breakdown Voltage Fabricated by Selective‐Area Growth

2019 ◽  
Vol 217 (7) ◽  
pp. 1900676
Author(s):  
Arne Debald ◽  
Simon Kotzea ◽  
Jona Riedel ◽  
Michael Heuken ◽  
Holger Kalisch ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Selective Area Growth ◽  
High Breakdown Voltage ◽  
Selective Area ◽  
Area Growth

High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Barrier ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Schottky Barrier Diodes ◽  
Edge Termination ◽  
Forward Current ◽  
Current Voltage ◽  
Thick Oxide Layer ◽  
P Type

ABSTRACTP-type 6H SiC Schottky barrier diodes with good rectifying characteristics upto breakdown voltage as high as 1000V have been successfully fabricated using metal-overlap over a thick oxide layer (∼ 6000 Å) as edge termination and Al as the barrier metal. The influence of the oxide layer edge termination in improving the reverse breakdown voltage as well as the forward current – voltage characteristics is presented. The terminated Schottky diodes indicate a factor of two higher breakdown voltage and 2–3 times larger forward current densities than those without edge termination. The specific series resistance of the unterminated diodes was ∼228 mΩ-cm2, while that of the terminated diodes was ∼84 mΩ-cm2.

High breakdown voltage Au/Pt/GaN Schottky diodes

2000 ◽  
Vol 18 (4) ◽  
pp. 1135-1138 ◽  
Author(s):  
G. T. Dang ◽  
A. P. Zhang ◽  
M. M. Mshewa ◽  
F. Ren ◽  
J.-I. Chyi ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
High Breakdown Voltage

Increased breakdown voltage of silicon-on-insulator Schottky diodes

1993 ◽  
Vol 29 (15) ◽  
pp. 1381 ◽  
Author(s):  
B.R. Kang ◽  
S.N. Yoon ◽  
Y.H. Cho ◽  
S.I. Cha ◽  
Y.I. Choi
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Silicon On Insulator

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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