Synergistic Effect of Glycine and BTA on Step Height Reduction Efficiency after Copper CMP in Weakly Alkaline Slurry

2016 ◽  
Vol 6 (1) ◽  
pp. P1-P6 ◽  
Author(s):  
Chenqi Yan ◽  
Yuling Liu ◽  
Jin Zhang ◽  
Chenwei Wang ◽  
Wenxia Zhang ◽  
...  
Keyword(s):  
Synergistic Effect ◽  
Step Height ◽  
Weakly Alkaline ◽  
Height Reduction ◽  
Reduction Efficiency ◽  
Copper Cmp

Effect of TT-LYK as the Inhibitor on Step Height Reduction for Copper CMP

2019 ◽  
Author(s):  
Jiakai Zhou ◽  
Xinhuan Niu ◽  
Jianchao Wang ◽  
Kai Zhang ◽  
Yaqi Cui ◽  
...  
Keyword(s):  
Step Height ◽  
Height Reduction ◽  
Copper Cmp

Determination of the Planarization Distance for Copper CMP Process

1999 ◽  
Vol 566 ◽  
Author(s):  
S Hymes ◽  
K. Smekalin ◽  
T. Brown ◽  
H. Yeung ◽  
M. Joffe ◽  
...  
Keyword(s):  
Reduction Ratio ◽  
Step Height ◽  
Measurement Tool ◽  
Process Conditions ◽  
Height Reduction ◽  
Pattern Dependencies ◽  
Copper Cmp

A planarization monitor has been applied to the copper system to investigate pattern dependencies during copper overburden planarization. Conventional profilometry and a noncontact, acousto-optic measurement tool, the Insite 300, are utilized to quantify the planarization performance in terms of the defined step-height-reduction-ratio (SHRR). Illustrative results as a function of slurry, pad type and process conditions are presented. For a typical stiff-pad copper CMP process, we determined the planarization distance to be approximately 2mm.

An Analytical Dishing and Step Height Reduction Model for Chemical Mechanical Planarization (CMP)

2002 ◽  
Author(s):  
Guanghui Fu ◽  
Abhijit Chandra
Keyword(s):  
Chemical Mechanical Planarization ◽  
Design Tool ◽  
Step Height ◽  
Wafer Surface ◽  
Surface Geometry ◽  
Height Reduction ◽  
Proposed Model ◽  
Model Predictions ◽  
Feature Scale ◽  
Good Agreement

An analytical model for dishing and step height reduction in chemical mechanical planarization (CMP) of copper is presented. The model is based on the assumption that at the feature scale, high areas on the wafer experience higher pressure than low areas. The slurry is assumed to be Prestonian. The model delineates how dishing and step height reduction depend on slurry properties (selectivity and Preston’s constants), pad characteristics (stiffness and bending ability), polishing conditions (pressure, relative velocity and overpolishing) and wafer surface geometry (linewidth, pitch and pattern density). Model predictions are in good agreement with existing experimental observations. The present model facilitates understanding of the CMP process at the feature scale. Based on the proposed model, design avenues for decreasing dishing and increasing the speed of step height reduction may be explored through modification of appropriate parameters for slurry, pad and polishing conditions. The proposed model may also be used as a design tool for pattern layout to optimize the performance of the CMP process.

On the Pattern Dependency and Substrate Effects During Chemical-Mechanical Planarization for Ulsi Manufacturing

1999 ◽  
Vol 566 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
James Jong-Lin Niu ◽  
Chi-Fa Lin
Keyword(s):  
Chemical Mechanical Planarization ◽  
Reduction Rate ◽  
Surface Profile ◽  
Step Height ◽  
Substrate Effects ◽  
Height Reduction ◽  
Pattern Density

The change of surface profile during chemical-mechanical planarization (CMP) is monitored continuously in this study. The influences from pattemn dependency and substrate effects are discussed. Step height reduction rate is a function of pattern density and down force. The rate decreases with time until planarization is achieved. As the polish approaches the patterns underneath, the interaction between substrate effects and pattern dependency results in the resurgence of step height. The implication of this newly found phenomenon is discussed.

Photocatalytic Reduction of Cr(VI) in the Presence of Citric Acid over Perovskite Type SO42-/TBBFS under UV-Vis Light Irradiation

2010 ◽  
Vol 113-116 ◽  
pp. 1632-1638 ◽  
Author(s):  
Xue Fei Lei ◽  
Xiang Xin Xue
Keyword(s):  
Citric Acid ◽  
Synergistic Effect ◽  
Photocatalytic Reduction ◽  
Light Irradiation ◽  
Molar Ratio ◽  
Compound System ◽  
Electron Hole ◽  
Effect Factor ◽  
Reduction Efficiency ◽  
Perovskite Type

The photocatalytic reduction experiments of Cr(VI) over the sulfate-modified titanium-bearing blast furnace slag photocatalyst under UV-vis light irradiation in the absence/presence of citric acid (0≤[citric acid]≤4 mM) were performed at different pH and different initial concentration. In the presence of citric acid, the photocatalytic reduction efficiency of Cr(VI) was significantly enhanced and kinetic constants of the compound system (in the presence of photaocatalyst, citric acid and Cr(VI))was nearly 9.2 times than that in the absence of citric acid. This enhanced efficiency may be attributed to the effective separation of electron-hole in the presence of citric acid. The maximum rate of Cr(VI) reduction was obtained for an initial citric acid/Cr(VI) molar ratio, R=3.75, a further increment in R being disadvantageous; however, the photocatalytic reduction efficiency of Cr(VI) in the presence of citric acid was always faster than in its absence. The synergistic effect factor is always greater than 6 in the compound system, indicating that a marked synergistic effect between the photocatalytic reduction of Cr(VI) and citric acid.

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