An Analytical Model for Step Height Reduction in CMP with Different Pattern Densities

2007 ◽  
Vol 154 (7) ◽  
pp. H596 ◽  
Author(s):  
Lixiao Wu ◽  
Changfeng Yan
Author(s):  
Jiakai Zhou ◽  
Xinhuan Niu ◽  
Jianchao Wang ◽  
Kai Zhang ◽  
Yaqi Cui ◽  
...  

Author(s):  
Guanghui Fu ◽  
Abhijit Chandra

An analytical model for dishing and step height reduction in chemical mechanical planarization (CMP) of copper is presented. The model is based on the assumption that at the feature scale, high areas on the wafer experience higher pressure than low areas. The slurry is assumed to be Prestonian. The model delineates how dishing and step height reduction depend on slurry properties (selectivity and Preston’s constants), pad characteristics (stiffness and bending ability), polishing conditions (pressure, relative velocity and overpolishing) and wafer surface geometry (linewidth, pitch and pattern density). Model predictions are in good agreement with existing experimental observations. The present model facilitates understanding of the CMP process at the feature scale. Based on the proposed model, design avenues for decreasing dishing and increasing the speed of step height reduction may be explored through modification of appropriate parameters for slurry, pad and polishing conditions. The proposed model may also be used as a design tool for pattern layout to optimize the performance of the CMP process.


1999 ◽  
Vol 566 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
James Jong-Lin Niu ◽  
Chi-Fa Lin

The change of surface profile during chemical-mechanical planarization (CMP) is monitored continuously in this study. The influences from pattemn dependency and substrate effects are discussed. Step height reduction rate is a function of pattern density and down force. The rate decreases with time until planarization is achieved. As the polish approaches the patterns underneath, the interaction between substrate effects and pattern dependency results in the resurgence of step height. The implication of this newly found phenomenon is discussed.


1999 ◽  
Vol 566 ◽  
Author(s):  
S Hymes ◽  
K. Smekalin ◽  
T. Brown ◽  
H. Yeung ◽  
M. Joffe ◽  
...  

A planarization monitor has been applied to the copper system to investigate pattern dependencies during copper overburden planarization. Conventional profilometry and a noncontact, acousto-optic measurement tool, the Insite 300, are utilized to quantify the planarization performance in terms of the defined step-height-reduction-ratio (SHRR). Illustrative results as a function of slurry, pad type and process conditions are presented. For a typical stiff-pad copper CMP process, we determined the planarization distance to be approximately 2mm.


2016 ◽  
Vol 6 (1) ◽  
pp. P1-P6 ◽  
Author(s):  
Chenqi Yan ◽  
Yuling Liu ◽  
Jin Zhang ◽  
Chenwei Wang ◽  
Wenxia Zhang ◽  
...  

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