Determination of the Planarization Distance for Copper CMP Process

1999 ◽  
Vol 566 ◽  
Author(s):  
S Hymes ◽  
K. Smekalin ◽  
T. Brown ◽  
H. Yeung ◽  
M. Joffe ◽  
...  
Keyword(s):  
Reduction Ratio ◽  
Step Height ◽  
Measurement Tool ◽  
Process Conditions ◽  
Height Reduction ◽  
Pattern Dependencies ◽  
Copper Cmp

A planarization monitor has been applied to the copper system to investigate pattern dependencies during copper overburden planarization. Conventional profilometry and a noncontact, acousto-optic measurement tool, the Insite 300, are utilized to quantify the planarization performance in terms of the defined step-height-reduction-ratio (SHRR). Illustrative results as a function of slurry, pad type and process conditions are presented. For a typical stiff-pad copper CMP process, we determined the planarization distance to be approximately 2mm.

Effect of TT-LYK as the Inhibitor on Step Height Reduction for Copper CMP

2019 ◽  
Author(s):  
Jiakai Zhou ◽  
Xinhuan Niu ◽  
Jianchao Wang ◽  
Kai Zhang ◽  
Yaqi Cui ◽  
...  
Keyword(s):  
Step Height ◽  
Height Reduction ◽  
Copper Cmp

Synergistic Effect of Glycine and BTA on Step Height Reduction Efficiency after Copper CMP in Weakly Alkaline Slurry

2016 ◽  
Vol 6 (1) ◽  
pp. P1-P6 ◽  
Author(s):  
Chenqi Yan ◽  
Yuling Liu ◽  
Jin Zhang ◽  
Chenwei Wang ◽  
Wenxia Zhang ◽  
...  
Keyword(s):  
Synergistic Effect ◽  
Step Height ◽  
Weakly Alkaline ◽  
Height Reduction ◽  
Reduction Efficiency ◽  
Copper Cmp

In situ ATR - FTIR spectroscopy of Hf(IV) tert butoxide adsorption on Si and Ge

2006 ◽  
Vol 917 ◽  
Author(s):  
Shilpa Dubey ◽  
Keijing Li ◽  
Harish Bhandari ◽  
Zheng Hu ◽  
C. Heath Turner ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Density Functional ◽  
Substrate Surface ◽  
Surface Concentration ◽  
Bidentate Ligand ◽  
Initial Reaction ◽  
Process Conditions ◽  
Reaction Cell

AbstractHafnium oxide ultra thin films on Si (100) are being developed to replace thermally grown SiO2 gates in CMOS devices. In this work, a specially designed Attenuated Total Reflectance - Fourier Transform Infra Red Spectroscopy (ATR-FTIR) reaction cell has been developed to observe chemisorption of hafnium (IV) t-butoxide onto a Si and Ge ATR crystal heated up to 250°C and under 1 torr of vacuum to observe the initial reaction pathways and species on the substrate surface in real time and under typical process conditions. Chemisorption spectra were compared to spectra of the liquid precursor and to spectra generated by density functional theory (DFT) calculations of liquid, monodentate and bidentate absorbed precursor. An asymmetric stretching mode located at ~1017 cm-1 present in the chemisorbed spectra but not in the liquid spectra indicates that the adsorbed hafnium containing group is prevalent as a bidentate ligand according to calculations. Surface concentration of the chemisorbed species was dependant on the substrate temperature and precursor partial pressure allowing for determination of heats of adsorption which was 26.5 kJ/mol on Si.

scholarly journals Analytical approach to determination of surface strengthening of chevron gears

2021 ◽  
Vol 102 (2) ◽  
pp. 5-12
Author(s):  
Kateryna Kamchatna-Stepanova
Keyword(s):  
Technological Process ◽  
Control Object ◽  
Gear Wheel ◽  
Information Model ◽  
Process Conditions ◽  
Information Classification ◽  
Technological Structure ◽  
Qualitative Characteristics ◽  
Material Input

The construction of an information model of the processes of gear processing of hardened large-modular chevron gears is one of the stages of control of the technological structure and parameters of the automation of the design of the technological process. Taking into account the principles of information classification, the automated gear processing process is considered as a control object, consisting of a number of technological objects: initial material (input of the control object); environment (process conditions); gear wheel (output of the control object, quantitative and qualitative characteristics of the surface layer) The construction of an information model of the processes of gear processing of hardened large-modular chevron gears is one of the stages of control of the technological structure and parameters of the automation of the design of the technological process.

scholarly journals Determination of optimal reaction temperature and hydrogen amount for propylene polymerization by a mathematical model

2019 ◽  
Vol 68 (3-4) ◽  
pp. 119-127 ◽  
Author(s):  
Gholam Hossain Varshouee ◽  
Amir Heydarinasab ◽  
Ali Vaziri ◽  
Seyed Mehdi Ghafelebashi Zarand
Keyword(s):  
Reaction Temperature ◽  
Average Molecular Weight ◽  
Propylene Polymerization ◽  
Process Conditions ◽  
Adequate Model ◽  
Natta Catalyst ◽  
Optimal Reaction Temperature ◽  
The Relationship ◽  
Optimal Reaction

Regarding the complexity of Ziegler-Natta catalyst kinetics in polypropylene polymerization, so far, there is no adequate model to determine the best process conditions for predicting average molecular weight and dispersity as the most crucial final product properties index. Consequently, a validated model has been developed which describes the relationship between the kinetic model and the existing gap using the polymer moment balance approach. It was concluded that increasing reaction temperature and hydrogen amount are useful and improve the final product indices to a certain limit, but afterwards they have harmful effects on the indices.

scholarly journals Determination of the transfer step of the ore chute while mining the technogenic deposit of the bulk type

2020 ◽  
Vol 166 ◽  
pp. 02004
Author(s):  
Volodymyr Peregudov ◽  
Ihor Hryhoriev ◽  
Serhii Joukov ◽  
Yulian Hryhoriev
Keyword(s):  
Raw Materials ◽  
Mining Industry ◽  
Process Conditions ◽  
Geological Conditions ◽  
Scientific Task ◽  
Technogenic Deposit ◽  
Mining Works ◽  
The Cost

Further development of the open mining works on the domestic enterprises will be accompanied by the worsening of mining-geological conditions and declining of the quality of iron ore raw materials. In the same time, the accumulated mining wastes, that can make the technogenic deposits, pass into one of the important sources of the mineral raw materials. Taking into account this thing, the development and implementation of the modern technological circuits of the technogenic deposit development is an actual calling for mining industry, and determination and optimization of process conditions of the technogenic deposit development – is the scientific task of this publication. The obtained results of studies of the optimum step value of the ore chute transfer during the technogenic deposit development can be used by design organizations and mining enterprises for designing works. The obtained methodology and the proposed mathematical dependencies will reduce the cost of mining of the technogenic deposit due to the reasonable timely transfer of the open ore chute.

Study on the planarization behaviour of copper CMP utilizing a dense pattern and a global step

2005 ◽  
Vol 867 ◽  
Author(s):  
Tilo Bormann ◽  
Johann W. Bartha
Keyword(s):  
Removal Rate ◽  
Specific Pattern ◽  
Constant Density ◽  
Large Area ◽  
Before And After ◽  
Contour Evolution ◽  
Copper Cmp ◽  
To Come ◽  
Dense Pattern

AbstractThe major aim of CMP is not the removal of excess material but the planarization of the surface. Therefore the determination of the planarization length appears to be more important than the removal rate itself. It has been shown, that the planarization length is not a constant process parameter, but is related to the removal respectively to the polish time in a square root behaviour. Founded on models proposed by Boning, Ouma, et. al. we applied a sequential polish on a single quasi infinite step. The resulting profile could be simulated by a sequential convolution of the surface contour with a Gaussian transfer function.To come closer to the situation on a chip pattern we investigated the planarization behaviour on a specific pattern of the MIT854AZ copper CMP test chip, where a large area of unpatterned surface touches a pattern with a specific constant density.The 200 mm wafer samples consisted of RIE structured oxide films covered with 850 nm ECD copper. The polish was performed on a standard semiconductor manufacturing tool, using a commercial consumables set. The surface profiles were determined by a high resolution profiler within the polishing sequence. The densely patterned areas are removed within a certain polishing time while the transition point between the unpatterned and patterned area appears as a global step. The deposited copper thickness is sufficient to study the contour evolution in both phases, before and after removal of the dense pattern. The paper presents the experimental results on the contour evolution for the patterned fields as well as the global step.

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