Artificial Defects in Si3N4Enhance Nonvolatile Memory Performance of Ultra-Thin Body Poly-Si Junctionless Field-Effect Transistors

Yu-Ru Lin; Wei-Cheng Wang; Lun-Chun Chen; Yung-Chun Wu

doi:10.1149/2.0271604jss

Artificial Defects in Si3N4Enhance Nonvolatile Memory Performance of Ultra-Thin Body Poly-Si Junctionless Field-Effect Transistors

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0271604jss ◽

2016 ◽

Vol 5 (4) ◽

pp. P3202-P3205 ◽

Cited By ~ 1

Author(s):

Yu-Ru Lin ◽

Wei-Cheng Wang ◽

Lun-Chun Chen ◽

Yung-Chun Wu

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Memory Performance ◽

Thin Body

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Synthesis and Characterization of Diperfluorooctyl-Substituted Phenylene−Thiophene Oligomers as n-Type Semiconductors. Molecular Structure−Film Microstructure−Mobility Relationships, Organic Field-Effect Transistors, and Transistor Nonvolatile Memory Elements

Chemistry of Materials ◽

10.1021/cm0495008 ◽

2004 ◽

Vol 16 (23) ◽

pp. 4715-4727 ◽

Cited By ~ 103

Author(s):

Antonio Facchetti ◽

Joseph Letizia ◽

Myung-Han Yoon ◽

Melissa Mushrush ◽

Howard E. Katz ◽

...

Keyword(s):

Molecular Structure ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Synthesis And Characterization ◽

Organic Field Effect Transistors ◽

Film Microstructure

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Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Cited By ~ 22

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

Si Substrates

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New Metal-High-k-High-k-Oxide-Semiconductor Capacitors and Field Effect Transistors Using Al/Y2O3/Ta2O5/SiO2/Si Structure for Nonvolatile Memory Applications

ECS Transactions ◽

10.1149/1.3372599 ◽

2019 ◽

Vol 28 (2) ◽

pp. 443-447

Author(s):

Wen-chieh Shih ◽

Fu-Chien Chiu ◽

Huey-Liang Hwang

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

High K ◽

Memory Applications

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Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors

Applied Physics Letters ◽

10.1063/1.122943 ◽

1998 ◽

Vol 73 (26) ◽

pp. 3941-3943 ◽

Cited By ~ 53

Author(s):

Nasir Abdul Basit ◽

Hong Koo Kim ◽

Jean Blachere

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Si Substrates

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Carbon nanotube field-effect transistors-an example of an ultra-thin body Schottky barrier device

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226919 ◽

2004 ◽

Cited By ~ 3

Author(s):

J. Appenzeller ◽

J. Knoch ◽

P. Avouris

Keyword(s):

Carbon Nanotube ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Thin Body ◽

Barrier Device

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Ferroelectric-Modulated MoS2 Field-Effect Transistors as Multilevel Nonvolatile Memory

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c09951 ◽

2020 ◽

Vol 12 (40) ◽

pp. 44902-44911

Author(s):

Liping Xu ◽

Zhihua Duan ◽

Peng Zhang ◽

Xiang Wang ◽

Jinzhong Zhang ◽

...

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors

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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131661 ◽

2011 ◽

Cited By ~ 95

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

D. Basu ◽

J. Boardman ◽

B. Chu-Kung ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Source Separation ◽

Thin Body ◽

High K ◽

Well Field ◽

Ingaas Quantum Well ◽

High K Gate Dielectric

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SONNOS Nonvolatile Memory Based on Ultra-Thin Body Poly-Si Junctionless Field-Effect Transistor with Excellent Retention

10.7567/ssdm.2015.ps-4-11 ◽

2015 ◽

Author(s):

Y.R. Lin ◽

W.C. Wang ◽

Y.H. Lin ◽

Y.C. Wu

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistor ◽

Thin Body ◽

Effect Transistor

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Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4985610 ◽

2017 ◽

Vol 121 (22) ◽

pp. 224503 ◽

Cited By ~ 2

Author(s):

Zhi Wang ◽

Liwei Wang ◽

Yunfei En ◽

Xiang-Wei Jiang

Keyword(s):

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Thin Body

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Effect of amide bond in gate dielectric polymers on memory performance of organic field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.05hb13 ◽

2014 ◽

Vol 53 (5S3) ◽

pp. 05HB13 ◽

Cited By ~ 2

Author(s):

Heisuke Sakai ◽

Hea-Jeong Cheong ◽

Takehito Kodzasa ◽

Hideo Tokuhisa ◽

Kazuhiko Tokoro ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Memory Performance ◽

Amide Bond ◽

Organic Field Effect Transistors

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