Highly Sensible ZnO Nanowire Ultraviolet Photodetectors Based on Mechanical Schottky Contact

2011 ◽  
Vol 159 (1) ◽  
pp. K10-K14 ◽  
Author(s):  
Dong Chan Kim ◽  
Byung Oh Jung ◽  
Yong Hun Kwon ◽  
Hyung Koun Cho
Keyword(s):  
Schottky Contact ◽  
Zno Nanowire ◽  
Ultraviolet Photodetectors

Design Guidelines for High Sensitivity ZnO Nanowire Gas Sensors With Schottky Contact

2019 ◽  
Vol 19 (3) ◽  
pp. 976-981
Author(s):  
Kihyun Kim ◽  
Hyeon-Tak Kwak ◽  
Hyeonsu Cho ◽  
M. Meyyappan ◽  
Chang-Ki Baek
Keyword(s):  
Gas Sensors ◽  
Schottky Contact ◽  
High Sensitivity ◽  
Design Guidelines ◽  
Zno Nanowire

ZnO nanowire photodetectors based on Schottky contact with surface passivation

2017 ◽  
Vol 395 ◽  
pp. 72-75 ◽  
Author(s):  
Dakuan Zhang ◽  
Yun Sheng ◽  
Jianyu Wang ◽  
Fan Gao ◽  
Shancheng Yan ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Schottky Contact ◽  
Zno Nanowire

Flexible ultraviolet photodetectors with ZnO nanowire networks fabricated by large area controlled roll-to-roll processing

2016 ◽  
Vol 4 (34) ◽  
pp. 7948-7958 ◽  
Author(s):  
Janghoon Park ◽  
Jongsu Lee ◽  
Youngwook Noh ◽  
Kee-Hyun Shin ◽  
Dongjin Lee
Keyword(s):  
Processing Method ◽  
Zno Nanowire ◽  
Large Area ◽  
Uv Photodetectors ◽  
Flexible Films ◽  
Roll To Roll ◽  
Nanowire Networks ◽  
Ultraviolet Photodetectors

Ultraviolet (UV) photodetectors containing flexible films were fabricated by a roll-to-roll processing method.

Study of the Optoelectronic Properties of Ultraviolet Photodetectors Based on Zn‐Doped CuGaO 2 Nanoplate/ZnO Nanowire Heterojunctions

2020 ◽  
Vol 257 (5) ◽  
pp. 1900684 ◽  
Author(s):  
Xiaoyi Wang ◽  
Hongda Wu ◽  
Guanxin Wang ◽  
Xiaohui Ma ◽  
Yingtian Xu ◽  
...  
Keyword(s):  
Optoelectronic Properties ◽  
Zno Nanowire ◽  
Ultraviolet Photodetectors ◽  
Nanowire Heterojunctions

Enhanced performance of flexible ultraviolet photodetectors based on carbon nitride quantum dot/ZnO nanowire nanocomposites

2019 ◽  
Vol 6 (4) ◽  
pp. 045002 ◽  
Author(s):  
Xuchao Shen ◽  
Lianfeng Duan ◽  
Jialun Li ◽  
Xueyu Zhang ◽  
Xuesong Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Carbon Nitride ◽  
Zno Nanowire ◽  
Ultraviolet Photodetectors

Self-powered ultraviolet photodetectors based on selectively grown ZnO nanowire arrays with thermal tuning performance

2014 ◽  
Vol 16 (20) ◽  
pp. 9525 ◽  
Author(s):  
Zhiming Bai ◽  
Xiang Chen ◽  
Xiaoqin Yan ◽  
Xin Zheng ◽  
Zhuo Kang ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays ◽  
Self Powered ◽  
Ultraviolet Photodetectors ◽  
Thermal Tuning

ZnO nanowire array ultraviolet photodetectors with self-powered properties

2013 ◽  
Vol 13 (1) ◽  
pp. 165-169 ◽  
Author(s):  
Zhiming Bai ◽  
Xiaoqin Yan ◽  
Xiang Chen ◽  
Hanshuo Liu ◽  
Yanwei Shen ◽  
...  
Keyword(s):  
Nanowire Array ◽  
Zno Nanowire ◽  
Self Powered ◽  
Ultraviolet Photodetectors

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Structure and Optical Properties of ZnO Nanowire Arrays Grown by Plasma-assisted Molecular Beam Epitaxy

2012 ◽  
Vol 27 (3) ◽  
pp. 301-304 ◽  
Author(s):  
Zhi-Yuan ZHENG ◽  
Tie-Xin CHEN ◽  
Liang CAO ◽  
Yu-Yan HAN ◽  
Fa-Qiang XU
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays

High-Responsivity Solar-Blind Ultraviolet Photodetectors Based on Carbon Nanodots/Graphene Hybrids

2021 ◽  
Vol 68 (3) ◽  
pp. 1101-1106
Author(s):  
Yong Fang ◽  
Zhiwei Zhao ◽  
Mengru Zhu ◽  
Zhengjin Weng ◽  
Chao Fang ◽  
...  
Keyword(s):  
Carbon Nanodots ◽  
High Responsivity ◽  
Solar Blind ◽  
Ultraviolet Photodetectors
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