ZnO nanowire photodetectors based on Schottky contact with surface passivation

2017 ◽  
Vol 395 ◽  
pp. 72-75 ◽  
Author(s):  
Dakuan Zhang ◽  
Yun Sheng ◽  
Jianyu Wang ◽  
Fan Gao ◽  
Shancheng Yan ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Schottky Contact ◽  
Zno Nanowire

Design Guidelines for High Sensitivity ZnO Nanowire Gas Sensors With Schottky Contact

2019 ◽  
Vol 19 (3) ◽  
pp. 976-981
Author(s):  
Kihyun Kim ◽  
Hyeon-Tak Kwak ◽  
Hyeonsu Cho ◽  
M. Meyyappan ◽  
Chang-Ki Baek
Keyword(s):  
Gas Sensors ◽  
Schottky Contact ◽  
High Sensitivity ◽  
Design Guidelines ◽  
Zno Nanowire

Electrical properties of ZnO nanowire field effect transistors by surface passivation

2008 ◽  
Vol 313-314 ◽  
pp. 378-382 ◽  
Author(s):  
Woong-Ki Hong ◽  
Bong-Joong Kim ◽  
Tae-Wook Kim ◽  
Gunho Jo ◽  
Sunghoon Song ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Surface Passivation ◽  
Field Effect Transistors ◽  
Zno Nanowire

Chemical surface passivation of HfO2films in a ZnO nanowire transistor

2006 ◽  
Vol 17 (9) ◽  
pp. 2116-2121 ◽  
Author(s):  
Tae-Hyoung Moon ◽  
Min-Chang Jeong ◽  
Byeong-Yun Oh ◽  
Moon-Ho Ham ◽  
Min-Hong Jeun ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Zno Nanowire ◽  
Chemical Surface ◽  
Nanowire Transistor

Tuning Areal Density and Surface Passivation of ZnO Nanowire Array Enable Efficient PbS QDs Solar Cells with Enhanced Current Density

2019 ◽  
Vol 7 (1) ◽  
pp. 1901551 ◽  
Author(s):  
Hadi Tavakoli Dastjerdi ◽  
Daniel Prochowicz ◽  
Pankaj Yadav ◽  
Mohammad Mahdi Tavakoli
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Surface Passivation ◽  
Nanowire Array ◽  
Areal Density ◽  
Zno Nanowire

Highly Sensible ZnO Nanowire Ultraviolet Photodetectors Based on Mechanical Schottky Contact

2011 ◽  
Vol 159 (1) ◽  
pp. K10-K14 ◽  
Author(s):  
Dong Chan Kim ◽  
Byung Oh Jung ◽  
Yong Hun Kwon ◽  
Hyung Koun Cho
Keyword(s):  
Schottky Contact ◽  
Zno Nanowire ◽  
Ultraviolet Photodetectors

scholarly journals Effects of surface passivation on top-down ZnO nanowire transistors

2015 ◽  
Vol 145 ◽  
pp. 91-95 ◽  
Author(s):  
N.M.J. Ditshego ◽  
K. Sun ◽  
I. Zeimpekis ◽  
P. Ashburn ◽  
M.R.R. de Planque ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Zno Nanowire ◽  
Top Down ◽  
Nanowire Transistors

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Structure and Optical Properties of ZnO Nanowire Arrays Grown by Plasma-assisted Molecular Beam Epitaxy

2012 ◽  
Vol 27 (3) ◽  
pp. 301-304 ◽  
Author(s):  
Zhi-Yuan ZHENG ◽  
Tie-Xin CHEN ◽  
Liang CAO ◽  
Yu-Yan HAN ◽  
Fa-Qiang XU
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays
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