TaN∕Ta as an Effective Diffusion Barrier for Direct Contact of Copper and NiSi

2012 ◽  
Vol 15 (1) ◽  
pp. H9 ◽  
Author(s):  
Yu-Long Jiang ◽  
Qi Xie ◽  
Xin-Ping Qu ◽  
David W Zhang ◽  
Davy Deduytsche ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Direct Contact ◽  
Effective Diffusion

In-Situ Tem Study of Copper-Tin Intermetallic Formation

1993 ◽  
Vol 323 ◽  
Author(s):  
Yujing Wu ◽  
Elizabeth G. Jacobs ◽  
Cyrus Pouraghabagher ◽  
Russell F. Pinizzotto
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Diffusion Barrier ◽  
Solder Joints ◽  
Effective Diffusion ◽  
Copper Substrate ◽  
In Situ Tem ◽  
Intermetallic Formation ◽  
Intermetallic Growth

AbstractThe formation and growth of Cu6Sn5 and Cu3Sn at the interface of Sn-Pb solder/copper substrate are factors which affect the solderability and reliability of electronic solder joints. The addition of particles such as Ni to eutectic Sn-Pb solder drastically affects the activation energies of formation for both intermetallics. This study was performed to understand the mechanisms of intermetallic formation and the effects of Ni on intermetallic growth. Cu/Sn and Cu/Sn/Ni thin films were deposited by evaporation and observed in the TEM in real time using a hot stage. The diffusion of Sn through Cu6Sn5 and Cu3Sn followed by reaction with Cu must occur for intermetallic formation and growth to take place. Ni is an effective diffusion barrier which prevents Sn from diffusing into Cu.

Effect of the Electroless Nickel, Electroless Palladium, and Immersion Gold Multilayer as a Diffusion Barrier on the Bonding Strength of BiTe-Based Thermoelectric Modules

2021 ◽  
Vol 21 (8) ◽  
pp. 4498-4502
Author(s):  
Yen Ngoc Nguyen ◽  
Khanh Quoc Dang ◽  
Injoon Son
Keyword(s):  
Intermetallic Compounds ◽  
Electrochemical Deposition ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Bonding Strength ◽  
Effective Diffusion ◽  
Electroless Nickel ◽  
Thermoelectric Modules ◽  
Diffusion Barrier Layer ◽  
Plating Layer

An effective diffusion barrier layer was coated onto the surface of BiTe-based materials to avoid the formation of brittle intermetallic compounds (IMCs) by the diffusion of the constituents of Sn-based solder alloys into the BiTe-based alloys. In this study, the electrochemical deposition of multi-layers, i.e., electroless nickel/electroless palladium/immersion gold (ENEPIG) was explored to enhance the bonding strength of BiTe materials with Cu electrodes. The thermoelectric modules with the ENEPIG plating layer exhibited high bonding strengths of 8.96 MPa and 7.28 MPa for the n- and p-type, respectively that increased slightly to 9.26 MPa and 7.76 MPa, respectively after the thermoelectric modules were heated at 200 °C for 200 h. These bonding strengths were significantly higher than that of the thermoelectric modules without a plating layer.

ANALYSIS OF THE ARRHENIUS SHAPE OF THE DIFFUSION COEFFICIENT ON AN fcc (111) SURFACE

2000 ◽  
Vol 07 (03) ◽  
pp. 219-225 ◽  
Author(s):  
M. MAŠÍN ◽  
Z. CHVOJ
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Barrier ◽  
Effective Diffusion ◽  
Chemical Diffusion ◽  
Strong Interactions ◽  
Chemical Diffusion Coefficient ◽  
Interacting Particles ◽  
Temperature Dependent ◽  
Deep Minimum ◽  
Coverage Dependence

We study the temperature and coverage dependence of an effective diffusion barrier assuming an Arrhenius shape of the chemical diffusion coefficient for a system of interacting particles. The previously published model of the diffusion of an fcc (111) surface with bivariate trap is used. The presence of two nonequivalent occupation sites and interaction result in a non-Arrhenius shape of the diffusion coefficient and a coverage- and temperature-dependent effective diffusion barrier. The temperature dependence of effective energy Ea shows a minimum at low temperatures (at approximately 150 K) for strong interactions. The coverage dependence of Ea has a deep minimum in the vicinity of Θ=1/2, even in a system without interaction.

TS-1 zeolite as an effective diffusion barrier for highly stable Pd membrane supported on macroporous α-Al2O3 tube

RSC Advances ◽  
2013 ◽  
Vol 3 (14) ◽  
pp. 4821 ◽  
Author(s):  
Xiaobin Wang ◽  
Xiaoyao Tan ◽  
Bo Meng ◽  
Xiongfu Zhang ◽  
Qi Liang ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Effective Diffusion ◽  
Pd Membrane ◽  
Al2o3 Tube ◽  
Α Al2o3

scholarly journals Reducing copper leaching from treated wood by sol-gel derived TiO2 and SiO2 depositions

Holzforschung ◽  
2013 ◽  
Vol 67 (4) ◽  
pp. 429-435 ◽  
Author(s):  
Muhammad Shabir Mahr ◽  
Thomas Hübert ◽  
Ina Stephan ◽  
Michael Bücker ◽  
Holger Militz
Keyword(s):  
Cell Wall ◽  
Diffusion Barrier ◽  
Sol Gel ◽  
Effective Diffusion ◽  
Treated Wood ◽  
Emission Rates ◽  
Step Process ◽  
Copper Leaching ◽  
One Step ◽  
The One

Abstract The antileaching efficacy of sol-gel-derived TiO2- and SiO2-based precursors has been evaluated through laboratory leaching trials with pine sapwood in two different ways. In a one-step process, wood was vacuum impregnated by the precursor solutions containing CuCl2. The copper (Cu) emission rates of the sol-gel-based impregnated woods were up to 70% lower than that of wood treated with pure CuCl2 solution at the same level of concentration. More improvement (80%) could be achieved in a two-step process, in which sol-gel precursors were introduced into an already CuCl2-treated wood. The refinement was attributed to several effects. In the one-step approach, Cu was embedded in the TiO2/SiO2 gels formed in the wood texture. During a two-step impregnation, gel layers that were formed in the wooden interior acted as an effective diffusion barrier. The sol-gel impregnations made wood more hydrophobic; therefore, the low amount of water that penetrated the cell wall was less efficient to leach out Cu.

scholarly journals Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Chia-Chi Yu ◽  
Hsin-jay Wu ◽  
Ping-Yuan Deng ◽  
Matthias T. Agne ◽  
G. Jeffrey Snyder ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Diffusion Barrier ◽  
Effective Diffusion ◽  
Thermoelectric Modules

Characterization of Atomic Layer Deposited Ultrathin HfO2 Film as a Diffusion Barrier in Cu Metallization

2007 ◽  
Vol 990 ◽  
Author(s):  
Prodyut Majumder ◽  
Rajesh Katamreddy ◽  
Christos G Takoudis
Keyword(s):  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Effective Diffusion ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Hfo2 Film ◽  
X Ray ◽  
Cu Metallization ◽  
Layer Deposition ◽  
Different Temperatures

ABSTRACTThermally stable, amorphous HfO2 thin films deposited using atomic layer deposition have been studied as a diffusion barrier between Cu and the Si substrate. 4 nm thick as-deposited HfO2 films deposited on Si are characterized with X-ray photoelectron spectroscopy. Cu/HfO2/<Si> samples are annealed at different temperatures, starting from 500 °C, in the presence of N2 atmosphere for 5 min and characterized using sheet resistance, X-ray diffraction and scanning electron microscopy. Ultrathin HfO2 films are found to be effective diffusion barrier between Cu and Si with a high failure temperature of about 750 °C.

Characterization of Tib2/TISI2 Bilayer Structure Deposited by Sputtering

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg
Keyword(s):  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Effective Diffusion ◽  
Barrier Properties ◽  
Titanium Boride ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Structural And Electrical Properties

AbstractBilayer of TiB2/TiSi2 was deposited by magnetron co-sputtering on silicon and alumina substrates, and this structure was investigated for structural and electrical properties. Substrate bias and annealing in vacuum have been applied to vary the film properties. X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) were used to characterize the structure, and chemical composition was characterized by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Resistivity was measured by four probe method. Diffusion barrier properties were studied by AES. As deposited films are amorphous with resistivities of about 40 μΩcm. Post deposition annealing in vacuum shows that the amorphous titanium boride film is very stable. Crystallization starts above 1000°C as seen by XRD, and the crystallization temperature depends on the thickness of TiB2. TiSi2 C54 forms in the temperature range 586°C - 922°C, when TiB2 still remains in amorphous form. The TiSi2 sublayer serves as an additional effective diffusion barrier, preventing outdiffusion of boron from TiB2 into the Si substrate.

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