scholarly journals Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Chia-Chi Yu ◽  
Hsin-jay Wu ◽  
Ping-Yuan Deng ◽  
Matthias T. Agne ◽  
G. Jeffrey Snyder ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Diffusion Barrier ◽  
Effective Diffusion ◽  
Thermoelectric Modules

scholarly journals Titanium-based thin film metallic glass as diffusion barrier layer for PbTe-based thermoelectric modules

APL Materials ◽  
2019 ◽  
Vol 7 (1) ◽  
pp. 013001 ◽  
Author(s):  
Chia-Chi Yu ◽  
Hsin-jay Wu ◽  
Matthias T. Agne ◽  
Ian T. Witting ◽  
Ping-Yuan Deng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Thermoelectric Modules ◽  
Diffusion Barrier Layer

Effect of the Electroless Nickel, Electroless Palladium, and Immersion Gold Multilayer as a Diffusion Barrier on the Bonding Strength of BiTe-Based Thermoelectric Modules

2021 ◽  
Vol 21 (8) ◽  
pp. 4498-4502
Author(s):  
Yen Ngoc Nguyen ◽  
Khanh Quoc Dang ◽  
Injoon Son
Keyword(s):  
Intermetallic Compounds ◽  
Electrochemical Deposition ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Bonding Strength ◽  
Effective Diffusion ◽  
Electroless Nickel ◽  
Thermoelectric Modules ◽  
Diffusion Barrier Layer ◽  
Plating Layer

An effective diffusion barrier layer was coated onto the surface of BiTe-based materials to avoid the formation of brittle intermetallic compounds (IMCs) by the diffusion of the constituents of Sn-based solder alloys into the BiTe-based alloys. In this study, the electrochemical deposition of multi-layers, i.e., electroless nickel/electroless palladium/immersion gold (ENEPIG) was explored to enhance the bonding strength of BiTe materials with Cu electrodes. The thermoelectric modules with the ENEPIG plating layer exhibited high bonding strengths of 8.96 MPa and 7.28 MPa for the n- and p-type, respectively that increased slightly to 9.26 MPa and 7.76 MPa, respectively after the thermoelectric modules were heated at 200 °C for 200 h. These bonding strengths were significantly higher than that of the thermoelectric modules without a plating layer.

Zr–Ti–Ni thin film metallic glass as a diffusion barrier between copper and silicon

2014 ◽  
Vol 50 (5) ◽  
pp. 2085-2092 ◽  
Author(s):  
Chih-Wei Wang ◽  
Pakman Yiu ◽  
Jinn P. Chu ◽  
Chan-Hung Shek ◽  
Chun-Hway Hsueh
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Diffusion Barrier

scholarly journals Devitrification of thin film Cu-Zr metallic glass via ultrashort pulsed laser annealing

2021 ◽  
pp. 161437
Author(s):  
J. Antonowicz ◽  
P. Zalden ◽  
K. Sokolowski-Tinten ◽  
K. Georgarakis ◽  
R. Minikayev ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ultrashort Pulsed Laser

ZrCuAlNi thin film metallic glass grown by high power impulse and direct current magnetron sputtering

2021 ◽  
pp. 127029
Author(s):  
Niklas Bönninghoff ◽  
Wahyu Diyatmika ◽  
Jinn P. Chu ◽  
Stanislav Mráz ◽  
Jochen M. Schneider ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
High Power ◽  
Direct Current Magnetron Sputtering

Thermal stability of PECVD W-B-N thin film as a diffusion barrier

1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of

High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 nm to 2500 nm near-infrared illumination

2022 ◽  
Author(s):  
Ali Sehpar Shikoh ◽  
Gi Sang Choi ◽  
Sungmin Hong ◽  
Kwang Seob Jeong ◽  
Jaekyun Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Near Infrared ◽  
Effective Diffusion ◽  
Band Alignment ◽  
Oxide Thin Film ◽  
Photogenerated Carrier ◽  
Channel Layer ◽  
Metal Oxide Thin Film

Abstract We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107 Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

TEM study of bubble formation in Ti–Ta–Si–Ni metallic glass surface alloy on TiNi SMA substrate during additive thin-film electron-beam synthesis

Vacuum ◽  
2021 ◽  
pp. 110597
Author(s):  
V.P. Rotshtein ◽  
V.O. Semin ◽  
S.N. Meisner ◽  
L.L. Meisner ◽  
F.A. D'yachenko ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Metallic Glass ◽  
Glass Surface ◽  
Bubble Formation ◽  
Surface Alloy
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