Thermal Effect on the Gate-Drain Bias Stress for Amorphous InGaZnO Thin Film Transistors

2012 ◽  
Vol 15 (5) ◽  
pp. H161 ◽  
Author(s):  
Sheng-Yao Huang ◽  
Ting-Chang Chang ◽  
Min-Chen Chen ◽  
Shih-Cheng Chen ◽  
Te-Chih Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Effect ◽  
Thin Film Transistors ◽  
Bias Stress ◽  
Drain Bias ◽  
Amorphous Ingazno

Local-Degradation-Induced Threshold Voltage Shift in Turned-OFF Amorphous InGaZnO Thin Film Transistors Under AC Drain Bias Stress

2015 ◽  
Vol 36 (6) ◽  
pp. 579-581 ◽  
Author(s):  
Jong In Kim ◽  
In-Tak Cho ◽  
Chan-Yong Jeong ◽  
Daeun Lee ◽  
Hyuck-In Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Drain Bias ◽  
Amorphous Ingazno

Effects of Alternating Pulse Bias Stress on Amorphous InGaZnO Thin Film Transistors

2012 ◽  
Vol 45 (7) ◽  
pp. 111-117 ◽  
Author(s):  
S. Park ◽  
E. N. Cho ◽  
I. Yun
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Bias Stress ◽  
Amorphous Ingazno

Abnormal Negative Bias Stress Instability of Amorphous InGaZnO Thin Film Transistors

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1918-1918
Author(s):  
Chia-Chun Yen ◽  
Chieh Lo ◽  
Yu-Chieh Liu ◽  
Chun-Hung Yeh ◽  
Cheewee Liu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress ◽  
Amorphous Ingazno

Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors

2012 ◽  
Vol 4 (10) ◽  
pp. 5369-5374 ◽  
Author(s):  
Jun Yong Bak ◽  
Sinhyuk Yang ◽  
Min Ki Ryu ◽  
Sang Hee Ko Park ◽  
Chi Sun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrode Materials ◽  
Bias Stress ◽  
Drain Bias

scholarly journals Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 603 ◽  
Author(s):  
Yan Zhou ◽  
Chengyuan Dong
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Characteristic Length ◽  
Ambient Atmosphere ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Bias Stress ◽  
Amorphous Ingazno ◽  
Gate Bias Stress

Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO2 or Al2O3 films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO2 PV layers showed a better improvement effect than the Al2O3 because the former had a smaller characteristic length (~5 nm) than that of the Al2O3 PV layers (~10 nm).

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