Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors

2012 ◽  
Vol 4 (10) ◽  
pp. 5369-5374 ◽  
Author(s):  
Jun Yong Bak ◽  
Sinhyuk Yang ◽  
Min Ki Ryu ◽  
Sang Hee Ko Park ◽  
Chi Sun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrode Materials ◽  
Bias Stress ◽  
Drain Bias

Local-Degradation-Induced Threshold Voltage Shift in Turned-OFF Amorphous InGaZnO Thin Film Transistors Under AC Drain Bias Stress

2015 ◽  
Vol 36 (6) ◽  
pp. 579-581 ◽  
Author(s):  
Jong In Kim ◽  
In-Tak Cho ◽  
Chan-Yong Jeong ◽  
Daeun Lee ◽  
Hyuck-In Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Drain Bias ◽  
Amorphous Ingazno

Thermal Effect on the Gate-Drain Bias Stress for Amorphous InGaZnO Thin Film Transistors

2012 ◽  
Vol 15 (5) ◽  
pp. H161 ◽  
Author(s):  
Sheng-Yao Huang ◽  
Ting-Chang Chang ◽  
Min-Chen Chen ◽  
Shih-Cheng Chen ◽  
Te-Chih Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Effect ◽  
Thin Film Transistors ◽  
Bias Stress ◽  
Drain Bias ◽  
Amorphous Ingazno

The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors

2012 ◽  
Vol 100 (22) ◽  
pp. 222901 ◽  
Author(s):  
Sheng-Yao Huang ◽  
Ting-Chang Chang ◽  
Li-Wei Lin ◽  
Man-Chun Yang ◽  
Min-Chen Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Degradation Behavior ◽  
Bias Stress ◽  
Drain Bias

Bias Stress Stability of Asymmetric Source-Drain a-Si:H Thin Film Transistors

2006 ◽  
Vol 910 ◽  
Author(s):  
Kwang-Sub Shin ◽  
Jae-Hoon Lee ◽  
Won-kyu Lee ◽  
Sang-Geun Park ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Carrier Concentration ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Bias Stress ◽  
Electrical Stress ◽  
Defect Creation ◽  
Drain Bias ◽  
Charge Depletion

AbstractThe threshold voltage (VT) degradation of asymmetric source-drain a-Si:H TFTs due to the electrical stress has been investigated. In the absence of a drain bias (VG=15V, VD=0V), the threshold voltage (VT) shifts of asymmetric TFTs were similar to that of symmetric TFT. However, in the presence of drain bias (VG=15V, VD=20V), the VT shifts of asymmetric TFTs were less than symmetric TFT. The VT shifts of ‘L’ and ‘J’ shaped TFT were 0.29V, 0.24V respectively, while the VT shift of ‘I’ shaped TFT was 0.42V.The less VT degradation of the asymmetric source-drain a-Si:H TFT compared with the symmetric TFT may be explained by the defect creation model. Since the actual drain width of asymmetric TFT is longer than symmetric TFT at the same W/L ratio, the charge depletion due to the drain bias is larger than that of the asymmetric TFT. Due to the less carrier concentration in the channel, the asymmetric a-Si:H TFT shows the less VT degradation compared with the symmetric TFT.

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