Multi-Scale Thickness and Roughness Characterization of Thin Silicon-On-Insulator Films

2013 ◽  
Vol 2 (9) ◽  
pp. P357-P361 ◽  
Author(s):  
Pablo E. Acosta-Alba ◽  
Oleg Kononchuk ◽  
Grégory Riou ◽  
Cécile Moulin ◽  
Christelle Bertrand-Giuliani ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Scale Thickness ◽  
Multi Scale ◽  
Thin Silicon

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

A simple quality factor for characterization of thin silicon films

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2227-2230 ◽  
Author(s):  
J. Kočka ◽  
T. Mates ◽  
M. Ledinský ◽  
H. Stuchlíková ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Quality Factor ◽  
Silicon Films ◽  
Thin Silicon

scholarly journals A Tracer Study on sCO2 Corrosion with Multiple Oxygen-Bearing Impurities

2021 ◽  
Author(s):  
Juho Lehmusto ◽  
Anton V. Ievlev ◽  
Ercan Cakmak ◽  
James R. Keiser ◽  
Bruce A. Pint
Keyword(s):  
Production Systems ◽  
Power Production ◽  
Model Alloy ◽  
Tracer Study ◽  
Protective Oxide ◽  
Scale Thickness ◽  
Low Levels ◽  
High Temperature Reactions ◽  
Ti Addition

AbstractSeveral modern power production systems utilize supercritical CO2 (sCO2), which can contain O2 and H2O as impurities. These impurities may degrade the compatibility of structural alloys through accelerated oxidation. However, it remains unclear which of these impurities plays a bigger role in high-temperature reactions taking place in sCO2. In this study, various model and commercial Fe‐ and Ni‐based alloys were exposed in 300 bar sCO2 at 750 °C to low levels (50 ppm) of O2 and H2O for 1,000 h. 18O-enriched water was used to enable the identification of the oxygen source in the post-exposure characterization of the samples. However, oxygen from the water did not accumulate in the scale, which consisted of Cr2O3 in the cases where a protective oxide formed. A 2wt.% Ti addition to a Ni-22%Cr model alloy resulted in the formation of thicker oxides in sCO2, while a 1wt.% Al addition reduced the scale thickness. A synergistic effect of both Al and Ti additions resulted in an even thicker oxide than what was formed solely by Ti, similar to observations for Ni-based alloy 282.

Fabrication and capillary characterization of multi-scale micro-grooved wicks with sintered copper powder

2021 ◽  
Vol 121 ◽  
pp. 105123
Author(s):  
Qifan Li ◽  
Zhong Lan ◽  
Jiang Chun ◽  
Shijun Lian ◽  
Rongfu Wen ◽  
...  
Keyword(s):  
Copper Powder ◽  
Multi Scale ◽  
Sintered Copper

Role and multi-scale characterization of bamboo biochar during poultry manure aerobic composting

2017 ◽  
Vol 241 ◽  
pp. 190-199 ◽  
Author(s):  
Ning Liu ◽  
Jialiang Zhou ◽  
Lujia Han ◽  
Shuangshuang Ma ◽  
Xiaoxi Sun ◽  
...  
Keyword(s):  
Poultry Manure ◽  
Aerobic Composting ◽  
Multi Scale ◽  
Scale Characterization

Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator

2017 ◽  
Vol 56 (10) ◽  
pp. 105503
Author(s):  
Kiichi Furukawa ◽  
Akinobu Teramoto ◽  
Rihito Kuroda ◽  
Tomoyuki Suwa ◽  
Keiichi Hashimoto ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Flat Surface ◽  
Silicon On Insulator ◽  
Thin Silicon ◽  
Ion Implanted
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