Visualization of Plasma Etching Damage of Si Using Room Temperature Photoluminescence and Raman Spectroscopy

2013 ◽  
Vol 2 (5) ◽  
pp. P214-P224 ◽  
Author(s):  
Shiu-Ko Jang Jian ◽  
Chih-Cherng Jeng ◽  
Ting-Chun Wang ◽  
Chih-Mu Huang ◽  
Ying-Lang Wang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Plasma Etching ◽  
Room Temperature ◽  
Room Temperature Photoluminescence

scholarly journals Facile and Clean Solution Synthesis of Large-Scale ZnO Nanorods Assisted with Aliquat 336

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Qiang Huang ◽  
Jianping Liu
Keyword(s):  
Raman Spectroscopy ◽  
Optical Properties ◽  
Large Scale ◽  
Chemical Method ◽  
Room Temperature ◽  
Zno Nanorods ◽  
Aliquat 336 ◽  
Photoluminescence Spectra ◽  
Solution Synthesis ◽  
Room Temperature Photoluminescence

A facile and clean fabrication of large-scale ZnO nanorods assisted with Aliquat 336 using aqueous chemical method is reported. As prepared, samples were characterized using XRD, EDS, SEM, TEM, and HRTEM. The optical properties were measured by Raman spectroscopy and room temperature photoluminescence spectra.

Exciton–phonon coupling and power dependent room temperature photoluminescence of sulphur vacancy doped MoS2via controlled thermal annealing

Nanoscale ◽  
2020 ◽  
Vol 12 (36) ◽  
pp. 18899-18907
Author(s):  
Dario Mastrippolito ◽  
Stefano Palleschi ◽  
Gianluca D'Olimpio ◽  
Antonio Politano ◽  
Michele Nardone ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Annealing ◽  
Room Temperature ◽  
Phonon Coupling ◽  
Room Temperature Photoluminescence ◽  
Sulphur Vacancy ◽  
Resonant Raman ◽  
Direct Investigation

A direct investigation of the exciton–phonon coupling in 2D doped MoS2 by means of power dependent photoluminescence and resonant Raman spectroscopy at room temperature.

Characterization of interface quality between various low-temperature oxides and Si using room-temperature-photoluminescence and Raman spectroscopy

2013 ◽  
Vol 28 (9) ◽  
pp. 1269-1277 ◽  
Author(s):  
Shiu-Ko Jang Jian ◽  
Chih-Cherng Jeng ◽  
Ting-Chun Wang ◽  
Chih-Mu Huang ◽  
Ying-Lang Wang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Temperature ◽  
Room Temperature ◽  
Interface Quality ◽  
Room Temperature Photoluminescence ◽  
Image Position

Abstract

Degradation in a Methyl-phenyl Co-Polymeric Polysilane for LED Applications

2003 ◽  
Vol 769 ◽  
Author(s):  
Asha Sharma ◽  
Deepak ◽  
Monica Katiyar ◽  
Satyendra Kumar ◽  
V. Chandrasekhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Weight ◽  
Light Source ◽  
Room Temperature ◽  
Light Exposure ◽  
Room Temperature Photoluminescence ◽  
Pl Spectrum ◽  
Pl Intensity ◽  
Methyl Phenyl

AbstractThe optical degradation of polysilane copolymer has been studied in spin cast thin films and solutions using light source of 325 nm wavelength. The room temperature photoluminescence (PL) spectrum of these films show a sharp emission at 368 nm when excited with a source of 325 nm. However, the PL intensity deteriorates with time upon light exposure. Further the causes of this degradation have been examined by characterizing the material for its transmission behaviour and changes occurring in molecular weight as analysed by GPC data.

Anomalous Room-Temperature Photoluminescence from Nanostrained MoSe2 Monolayers

ACS Photonics ◽  
2021 ◽  
Author(s):  
Tomojit Chowdhury ◽  
Kiyoung Jo ◽  
Surendra B. Anantharaman ◽  
Todd H. Brintlinger ◽  
Deep Jariwala ◽  
...  
Keyword(s):  
Room Temperature ◽  
Room Temperature Photoluminescence

The Study on Microstructural and Optical Properties of Nanocrystalline Germanium Films

2010 ◽  
Vol 663-665 ◽  
pp. 324-327
Author(s):  
Chao Song ◽  
Rui Huang
Keyword(s):  
Multilayer Structure ◽  
Room Temperature ◽  
Multilayer Film ◽  
Volume Fraction ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force ◽  
Lower Volume Fraction ◽  
Lower Volume

The germanium film and Ge/Si multilayer structure were fabricated by magnetron sputtering technique on silicon substrate at temperatures of 500°C. Raman scattering spectroscopy measurements reveal that the nanocrystalline Ge occurs in both kinds of samples. Furthermore, from the atomic force microscopy (AFM) results, it is found that the grain size as well as spatially ordering distribution of the nc-Ge can be modulated by the Ge/Si multilayer structure. The room temperature photoluminescence was also observed in the samples. However, compared with that from the nc-Ge film, the intensity of PL from the nc-Ge/a-Si multilayer film becomes weaker, which is attributed to its lower volume fraction of crystallized component.

scholarly journals Enhanced Room‐Temperature Photoluminescence Quantum Yield in Morphology Controlled J‐Aggregates

2021 ◽  
pp. 1903080
Author(s):  
Surendra B. Anantharaman ◽  
Joachim Kohlbrecher ◽  
Gabriele Rainò ◽  
Sergii Yakunin ◽  
Thilo Stöferle ◽  
...  
Keyword(s):  
Quantum Yield ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Photoluminescence Quantum Yield ◽  
J Aggregates

ROOM TEMPERATURE PHOTOLUMINESCENCE OF POLYCRYSTALLINE SIC PREPARED FROM CARBON-SATURATED SI MELT

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1047-1051
Author(s):  
JIANPING MA ◽  
ZHIMING CHEN ◽  
GANG LU ◽  
MINGBIN YU ◽  
LIANMAO HANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Uv Light ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Composition And Structure ◽  
Light Excitation ◽  
Scanning Electron

Intense photoluminescence (PL) has been observed at room temperature from the polycrystalline SiC samples prepared from carbon-saturated Si melt at a temperature ranging from 1500 to 1650°C. Composition and structure of the samples have been confirmed by means of X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. PL measurements with 325 nm UV light excitation revealed that the room temperature PL spectrum of the samples consists of 3 luminescent bands, the peak energies of which are 2.38 eV, 2.77 eV and 3.06 eV, respectively. The 2.38 eV band is much stronger than the others. It is suggested that some extrinsic PL mechanisms associated with defect or interface states would be responsible to the intensive PL observed at room temperature.

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