A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

2016 ◽  
Vol 6 (1) ◽  
pp. P27-P31 ◽  
Author(s):  
X. F. Liu ◽  
G. G. Yan ◽  
Z. W. Shen ◽  
Z. X. Wen ◽  
L. X. Tian ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Conventional Chemical Vapor Deposition ◽  
Si Wafer

Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

CrystEngComm ◽  
2018 ◽  
Vol 20 (40) ◽  
pp. 6236-6242 ◽  
Author(s):  
Y. Arata ◽  
H. Nishinaka ◽  
D. Tahara ◽  
M. Yoshimoto
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Single Phase ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Sapphire Substrates

In this study, single-phase ε-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates.

Graphene Growth on and Transfer From Platinum Thin Films

2017 ◽  
Vol 6 (2) ◽  
Author(s):  
Joon Hyong Cho ◽  
Michael Cullinan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mems Devices ◽  
Graphene Growth ◽  
Cvd Method ◽  
Graphene Transfer ◽  
Conventional Chemical Vapor Deposition

This paper presents graphene growth on Pt thin films deposited with four different adhesion layers: Ti, Cr, Ta, and Ni. During the graphene growth at 1000 °C using conventional chemical vapor deposition (CVD) method, these adhesion layers diffuse into and alloy with Pt layer resulting in graphene to grown on different alloys. This means that each different adhesion layers induce a different quality and number of layer(s) of graphene grown on the Pt thin film. This paper presents the feasibility of graphene growth on Pt thin films with various adhesion layers and the obstacles needed to overcome in order to enhance graphene transfer from Pt thin films. Therefore, this paper addresses one of the major difficulties of graphene growth and transfer to the implementation of graphene in nano/micro-electromechanical systems (NEMS/MEMS) devices.

Substrate Dependent Texture and Heteroepitaxy for Group IIIA Nitride Films by the X-Ray Precession Method

1990 ◽  
Vol 208 ◽  
Author(s):  
T. J. Kistenmacher ◽  
W. A. Bryden ◽  
D. K. Wickenden ◽  
S. A. Ecelberger
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
X Ray ◽  
Fused Quartz ◽  
Metalorganic Chemical

ABSTRACTThe X-ray precession method has been utilized to study texture and heteroepitaxy for thin films of the Group IIIA nitrides deposited on a variety of amorphous and single-crystal substrates. Films of InN were synthesized by reactive rfmagnetron sputtering [employing an elemental target and N2 as the sputtering gas], while the GaN films were deposited by metalorganic chemical vapor deposition [utilizing (CH 3 ) 3Ga and NH3 as sources]. The quality of (00.1) textured films of InN on fused quartz and slightly off-axis (111) Si are taken as initial examples of the versatility of the X-ray precession method. The powder rings evolving from a lack of azimuthal coherence for InN films grown on quartz are contrasted with the scattering from weakly correlated (pseudo heteroepitaxial) domains for films grown on (111) Si. These latter scattering features are then compared with those from the true heteroepitaxial deposition of InN onto the (111) face of cubic ZrO2. And, finally, the scattering from the heteroepitaxial growth of InN and GaN on the (00.1) face of sapphire and some initial studies on the effect of nucleation layers on twinning in the GaN films are presented.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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