Graphene Growth on and Transfer From Platinum Thin Films

2017 ◽  
Vol 6 (2) ◽  
Author(s):  
Joon Hyong Cho ◽  
Michael Cullinan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mems Devices ◽  
Graphene Growth ◽  
Cvd Method ◽  
Graphene Transfer ◽  
Conventional Chemical Vapor Deposition

This paper presents graphene growth on Pt thin films deposited with four different adhesion layers: Ti, Cr, Ta, and Ni. During the graphene growth at 1000 °C using conventional chemical vapor deposition (CVD) method, these adhesion layers diffuse into and alloy with Pt layer resulting in graphene to grown on different alloys. This means that each different adhesion layers induce a different quality and number of layer(s) of graphene grown on the Pt thin film. This paper presents the feasibility of graphene growth on Pt thin films with various adhesion layers and the obstacles needed to overcome in order to enhance graphene transfer from Pt thin films. Therefore, this paper addresses one of the major difficulties of graphene growth and transfer to the implementation of graphene in nano/micro-electromechanical systems (NEMS/MEMS) devices.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

Nucleation And Growth of Yttria-Stabilized Zirconia Thin Films Using Combustion Chemical Vapor Deposition

2002 ◽  
Vol 756 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Sergey Yarmolenko ◽  
Qiuming Wei
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Nucleation Rate ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Structural Evolution ◽  
Chemical Vapor ◽  
Total Metal ◽  
Vapor Deposition Technique

ABSTRACTLiquid fuel combustion chemical vapor deposition technique was successfully used for YSZ thin film processing. The nucleation rates were obtained for the samples processed at different temperatures and total-metal-concentrations in the liquid fuel. An optimum substrate temperature was found for the highest nucleation rate. The nucleation rate was increased with the total-metal-concentration. Structural evolution of the thin film in the early processing stage was studied with regard to the formation of nuclei, crystallites and final crystals on the films. The films were found to be affected by high temperature annealing. The crystals and the thin films were characterized with scanning electron microscopy.

Properties of I-Doped CuI Thin Films by Chemical Vapor Deposition (CVD)

2013 ◽  
Vol 832 ◽  
pp. 439-443 ◽  
Author(s):  
Nur Amalina Muhamad ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Current ◽  
Constant Voltage ◽  
Iodine Doping ◽  
Particle Structure ◽  
Cvd Method

In this paper, we present the properties of I-doped CuI thin films at different concentration of iodine dopant (e.g. 10mg, 20mg, 30mg, 40mg and 100mg). The doping of CuI was done by using double furnace chemical vapor deposition (CVD) method. The effects of I-doped CuI to its surface morphology and electrical were studied. The effect of iodine doping to surface morphology was measured by field emission scanning electron microscopy (FESEM). The morphology of all thin films shows insignificance changes in grain size, grain boundaries and particle structure as the doping concentration varies. For the electrical properties, high current at constant voltage of-5V to 5V was obtained. The resistivity of 10-1 was obtained for undoped CuI thin films. While, for the series of I-doped CuI thin films, the resistivity of 10-2 was obtained. The excess of hole conductor in the I-doped CuI thin films enhances the electrical conductivity of the films.

MWCNTs - Ni-Cu NPs @ a-C:H thin films: Study of relation between the average diameters of CNTs with optical density and topological characterizations

2020 ◽  
Author(s):  
Samira Goudarzi ◽  
Vali Dalouji
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Optical Density ◽  
Vapor Deposition ◽  
High Spatial Frequency ◽  
Chemical Vapor ◽  
High Energy ◽  
Rf Plasma ◽  
Minimum Value

Abstract In this paper, Ni-Cu NPs @ a-C:H thin films with different content of cooper by co-deposition of RF-sputtering and RF-plasma enhanced chemical vapor deposition (RF-PECVD) were prepared from acetylene gas and Ni and Cu targets. The prepared samples as catalysts for growing multi-wall carbon nanotubes (MWCNTs) were used from liquid petroleum gas (LPG) by thermal chemical vapor deposition (TCVD) at 825 °C. The films deposited with 5% Cu have minimum value the average diameter of CNTs and were about 100 nm. The fractal dimensions and structural characteristics as well as optical density of Ni-Cu NPs thin films have been investigated. AFM images can estimate the lateral size of the nanoparticles on the films surface. These values for Ni NPs without Cu NPs @ a-C:H thin film and with Cu NPs thin film contenting 5%, 40%, 75% Cu are obtained about 7.2, 5.34, 6.04 and 11.16 nm respectively. The optical density (Dopt) of thin films was obtained from the relation Dopt = \alpha t. Films deposited with 75% Cu have maximum value of optical density specially in high energy. The spectral density power of all layers reflects the reverse flow changes,, especially in the high spatial frequency region, indicating the presence of fractal components in prominent topographies. Films deposited with 75% Cu have minimum value of fractal dimension. The diagram of the Bearing Area proportion the height shows the percentage of cavities and single-layers. It can be seen that the single-layer content of all films were about 95%.

Parametric Modeling and Optimization of Chemical Vapor Deposition Process

2008 ◽  
Author(s):  
Po Ting Lin ◽  
Yogesh Jaluria ◽  
Hae Chang Gea
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Parametric Modeling ◽  
Parametric Models ◽  
Modeling And Optimization

This paper focuses on the parametric modeling and optimization of the Chemical Vapor Deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using Radial Basis Function (RBF) for various functions which are related to the deposition rate and uniformity of the thin films are studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.

Plasma Assisted Chemical Vapor Deposition of Aluminum For Metallization In Ulsi

1996 ◽  
Vol 427 ◽  
Author(s):  
Dong-Chan Kim ◽  
Young-Soung Kim ◽  
Seung-Ki Joo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Large Scale ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Thermal Cvd ◽  
Dimethylethylamine Alane

AbstractAn aluminum thin film for ultra large scale integrated circuits(ULSI) metalization has been formed by PACVD using DMEAA(Dimethylethylamine alane) as a precursor. The selectivity was lost but the conformal step coverage was still maintained when the hydrogen plasma was added to conventional CVD process so that perfectly planarized metalization could be obtained.Comparing to thermal CVD, the reflectivity as well as the resistivity could be much improved especially when the film was deposited on SiO2. The deposition rate and the resistivity of PACVD Al thin films deposited on various substrates such as Si, TiN and SiO2 were compared with those of thermal CVD Al thin films.

scholarly journals High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature

RSC Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 58-64 ◽  
Author(s):  
Kyoung Woo Park ◽  
Seunghee Lee ◽  
Hyunkoo Lee ◽  
Yong-Hwan Cho ◽  
Yong Cheon Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Performance ◽  
Single Layer ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Layer Thin Film

High-performance H:SiON single layer thin film encapsulation (TFE) was deposited by plasma enhanced chemical vapor deposition (PECVD) method. To control the characteristics of the SiON thin films, hydrogen gas was introduced during PECVD process.

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