2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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9781509039920

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Reduced current collapse in multi-fingered AlGaN/GaN MOS-HEMTs with dual field plate

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2017.7998058 ◽

2017 ◽

Cited By ~ 2

Author(s):

R. Yamaguchi ◽

Y. Suzuki ◽

J. T. Asubar ◽

H. Tokuda ◽

M. Kuzuhara

Keyword(s):

Field Plate ◽

Current Collapse

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A fast microwave correlated imaging method based on strip division in large scenes

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2017.7998051 ◽

2017 ◽

Author(s):

Yuanyue Guo ◽

Jie Deng ◽

Dongjin Wang

Keyword(s):

Imaging Method

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Study on underwater wireless power transfer via electric coupling with a submerged electrode

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2017.7998030 ◽

2017 ◽

Cited By ~ 4

Author(s):

Mitsuhiro Urano ◽

Kazuki Ata ◽

Akira Takahashi

Keyword(s):

Wireless Power Transfer ◽

Power Transfer ◽

Wireless Power ◽

Electric Coupling

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Thermal analysis of pulsed LED lighting in Plant Factory

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2017.7998040 ◽

2017 ◽

Author(s):

Kazuki Ata ◽

Mitsuhiro Urano ◽

Akira Takahashi

Keyword(s):

Thermal Analysis ◽

Led Lighting ◽

Plant Factory

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Session A: (Silicon devices)

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2017.7998022 ◽

2017 ◽

Author(s):

Naoto Matsuo ◽

Yukiharu Uraoka

Keyword(s):

Silicon Devices

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Planar device using In-Ga-Zn-O semiconductor for synapse element in neural network

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2017.7998048 ◽

2017 ◽

Author(s):

Daiki Yamakawa ◽

Yuki Koga ◽

Keisuke Ikushima ◽

Kenta Umeda ◽

Toshimasa Hori ◽

...

Keyword(s):

Neural Network ◽

Planar Device

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A novel SAW resonator with Incredible High-Performances

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2017.7998063 ◽

2017 ◽

Cited By ~ 1

Author(s):

Hideki Iwamoto ◽

Tsutomu Takai ◽

Yuichi Takamine ◽

Masahiro Hiramoto ◽

Masayoshi Koshino

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Optical absorption properties of Ni1−xMgxO thin films

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2017.7998038 ◽

2017 ◽

Author(s):

K. Kinoshita ◽

T. Nishida ◽

S. Shingubara ◽

M. Inada ◽

T. Saitoh

Keyword(s):

Thin Films ◽

Optical Absorption ◽

Absorption Properties

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Study of the inverter circuit with DNA/Si-MOSFET

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2017.7998028 ◽

2017 ◽

Author(s):

Hibiki Nakano ◽

Naoto Matsuo ◽

Tadao Takada ◽

Kazushige Yamana ◽

Akira Heya ◽

...

Keyword(s):

Inverter Circuit

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Effects of He plasma treatment on zinc oxide thin film transistors

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2017.7998045 ◽

2017 ◽

Author(s):

Shotaro Shinya ◽

Toyokazu Kaneko ◽

Masatoshi Koyama ◽

Toshihiko Maemoto ◽

Shigehiko Sasa

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Plasma Treatment ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film

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2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Reduced current collapse in multi-fingered AlGaN/GaN MOS-HEMTs with dual field plate

A fast microwave correlated imaging method based on strip division in large scenes

Study on underwater wireless power transfer via electric coupling with a submerged electrode

Thermal analysis of pulsed LED lighting in Plant Factory

Session A: (Silicon devices)

Planar device using In-Ga-Zn-O semiconductor for synapse element in neural network

A novel SAW resonator with Incredible High-Performances

Optical absorption properties of Ni1−xMgxO thin films

Study of the inverter circuit with DNA/Si-MOSFET

Effects of He plasma treatment on zinc oxide thin film transistors

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
Latest Publications