Enhanced Grain Growth of Electroplated Copper on Cobalt-Containing Seed Layer

2013 ◽  
Vol 160 (12) ◽  
pp. D3045-D3050 ◽  
Author(s):  
Q. Huang ◽  
B. C. Baker-O'Neal ◽  
C. Cabral ◽  
E. Simonyi ◽  
V. R. Deline ◽  
...  
Keyword(s):  
Grain Growth ◽  
Seed Layer ◽  
Electroplated Copper

Effect of the Lattice Mismatch Between Copper Thin-Film Interconnection and Base Material on the Crystallinity of the Interconnection

2013 ◽  
Author(s):  
Chuanhong Fan ◽  
Ryosuke Furuya ◽  
Osamu Asai ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Seed Layer ◽  
Lattice Mismatch ◽  
Semiconductor Devices ◽  
Base Material ◽  
Diffraction Method ◽  
Copper Thin Film ◽  
New Material ◽  
Electroplated Copper ◽  
Electron Back Scattered Diffraction

In the present study, a new material, ruthenium whose lattice mismatch against copper is about 6%, was used as the seed layer of electroplated copper thin-film interconnections for semiconductor devices. The crystallinity of the copper thin-film interconnections was evaluated through an EBSD (Electron Back-scattered Diffraction) method and it is found that the crystallinity of them is improved drastically compared with those electroplated on the copper seed. The resistance and electro migration (EM) tolerance of the copper interconnections are also improved a lot compared with the interconnections electroplated on copper seed. Based on these results, a new guideline to design highly reliable electroplated copper thin-film interconnection has been established.

Seed layer dependence of room-temperature recrystallization in electroplated copper films

1999 ◽  
Vol 86 (9) ◽  
pp. 4930-4935 ◽  
Author(s):  
Kazuyoshi Ueno ◽  
Tom Ritzdorf ◽  
Scott Grace
Keyword(s):  
Seed Layer ◽  
Room Temperature ◽  
Copper Films ◽  
Electroplated Copper

Annealing Phenomena in Cu/Ni Composite Electrodeposit

2012 ◽  
Vol 715-716 ◽  
pp. 952-952
Author(s):  
K.H. Kim ◽  
D.H. Kang ◽  
Yong Bum Park
Keyword(s):  
Grain Size ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
The Other ◽  
Atomic Diffusion ◽  
Copper Sheet ◽  
Interfacial Stresses ◽  
Mean Size ◽  
Electroplated Copper ◽  
Different Parts

Cu/Ni composite electrodeposit was fabricated by electroplating nickel on the both sides of an electroplated copper sheet. In order to lower interfacial stresses between copper and nickel, the microstructure of nickel was controlled to consist of grains with a mean size of 15 nanometers. The different parts of the composite electrodeposit underwent different evolution of textures and microstructures during annealing. In the Cu electrodeposit, the as-deposited texture characterized by a relatively high <100>//ND and twin components transformed to be diffuse due to grain growth during annealing above 300°C. This is attributed to a large number of twins conducting the as-deposited microstructure. On the other hand, in the Ni electrodeposit, grain growth that takes place during annealing above 250°C corresponds to abnormal grain growth in terms of the scale change of the grain size. This grain growth also transformed the as-deposited texture of strong <100>//ND into a diffuse texture. In the interface between copper and nickel, the atomic diffusion was generated by excessive vacancies resulting from the grain growth during the annealing of nanostructured Ni electrodeposit. An 'interface texture' began to developed in the previous Cu region above 500°C, and the microtexture development was similar to the growth texture of the annealed Ni electrodeposit.

Current Induced Grain Growth of Electroplated Copper Film

2012 ◽  
Vol 51 ◽  
pp. 05EA04 ◽  
Author(s):  
Liyana Razak ◽  
Takamasa Yamaguchi ◽  
Seishi Akahori ◽  
Hideki Hashimoto ◽  
Kazuyoshi Ueno
Keyword(s):  
Grain Growth ◽  
Copper Film ◽  
Electroplated Copper

Copper Electroplating for Damascene ULSI Interconnects

1998 ◽  
Vol 514 ◽  
Author(s):  
V. M. Dubin ◽  
S. Lopatin ◽  
S. Chen ◽  
R. Cheung ◽  
C. Ryu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Tensile Stress ◽  
High Aspect Ratio ◽  
Seed Layer ◽  
Cu Films ◽  
Step Coverage ◽  
Copper Electroplating ◽  
Electroplated Copper ◽  
Bottom Step

ABSTRACTCopper was electroplated on sputtered Cu seed layer with Ta diffusion barrier. We achieved enhanced Cu deposition at the bottom of trenches/vias and defect-free filling sub-0.5 μm trenches (down to 0.25 μm width) of high aspect ratio (up to 4:1). Large grains occupying the entire trench were observed. Bottom step coverage of electroplated copper in sub-0.5 μm trenches was estimated to be about 140%, while sidewalls step coverage was about 120%. Via resistance for sub-0.5 μm vias was measured to be below 0.55 Ω. Strong <111> texture, large grains, and low tensile stress were observed in electroplated Cu films and in-laid Cu lines after low temperature anneal.

Effects of wetting ability of plating electrolyte on Cu seed layer for electroplated copper film

2004 ◽  
Vol 22 (6) ◽  
pp. 2315-2320 ◽  
Author(s):  
Chi-Wen Liu ◽  
Jung-Chih Tsao ◽  
Ming-Shih Tsai ◽  
Ying-Lang Wang
Keyword(s):  
Seed Layer ◽  
Copper Film ◽  
Wetting Ability ◽  
Electroplated Copper

scholarly journals Microstructural Characterization of Electroplated Copper Films on Copper-Alloy Seed Layer

2007 ◽  
Vol 56 (6) ◽  
pp. 465-470
Author(s):  
Yukinori HIROSE ◽  
Kazuhito HONDA ◽  
Kazuyoshi MAEKAWA ◽  
Hiroshi MIYAZAKI ◽  
Akira UEDONO ◽  
...  
Keyword(s):  
Copper Alloy ◽  
Seed Layer ◽  
Microstructural Characterization ◽  
Copper Films ◽  
Electroplated Copper

Anisotropy of grain boundary energies as cause of abnormal grain growth in electroplated copper films

2003 ◽  
Vol 48 (6) ◽  
pp. 683-688 ◽  
Author(s):  
Jong-Min Paik ◽  
Young-Joon Park ◽  
Min-Seung Yoon ◽  
Je-Hun Lee ◽  
Young-Chang Joo
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
Copper Films ◽  
Electroplated Copper
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