Seed layer dependence of room-temperature recrystallization in electroplated copper films

1999 ◽  
Vol 86 (9) ◽  
pp. 4930-4935 ◽  
Author(s):  
Kazuyoshi Ueno ◽  
Tom Ritzdorf ◽  
Scott Grace
Keyword(s):  
Seed Layer ◽  
Room Temperature ◽  
Copper Films ◽  
Electroplated Copper

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 562 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

ABSTRACTSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 564 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

AbstractSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

Barrier Effect on Electroplated Cu Films

1999 ◽  
Vol 564 ◽  
Author(s):  
R. Faust ◽  
Q. Jiang
Keyword(s):  
Room Temperature ◽  
Copper Films ◽  
Barrier Effect ◽  
Barrier Material ◽  
Dramatic Effect ◽  
Cu Films ◽  
Barrier Materials ◽  
Electroplated Copper

AbstractThe effect of various barrier materials on the microstructure of electroplated Copper films was investigated. Analysis of the Cu was performed at the as-deposited, room temperature stabilized, and annealed states. It shows that the barrier material can have a dramatic effect on the properties of electroplated Cu.

scholarly journals Microstructural Characterization of Electroplated Copper Films on Copper-Alloy Seed Layer

2007 ◽  
Vol 56 (6) ◽  
pp. 465-470
Author(s):  
Yukinori HIROSE ◽  
Kazuhito HONDA ◽  
Kazuyoshi MAEKAWA ◽  
Hiroshi MIYAZAKI ◽  
Akira UEDONO ◽  
...  
Keyword(s):  
Copper Alloy ◽  
Seed Layer ◽  
Microstructural Characterization ◽  
Copper Films ◽  
Electroplated Copper

Study of microstructure and resistivity evolution for electroplated copper films at near-room temperature

2001 ◽  
Vol 32 (7) ◽  
pp. 579-585 ◽  
Author(s):  
W.H Teh ◽  
L.T Koh ◽  
S.M Chen ◽  
J Xie ◽  
C.Y Li ◽  
...  
Keyword(s):  
Room Temperature ◽  
Copper Films ◽  
Electroplated Copper

Impact of Low-Temperature Anneals of Electroplated Copper Films on Copper CMP Removal Rates

1999 ◽  
Vol 566 ◽  
Author(s):  
Konstantin Smekalin ◽  
Qing-Tang Jiang
Keyword(s):  
Room Temperature ◽  
Rate Increase ◽  
Removal Rate ◽  
Inert Gas ◽  
Copper Films ◽  
Cu Films ◽  
Film Hardness ◽  
Cu Film ◽  
Electroplated Copper ◽  
Over Time

CMP removal rate (RR) of electrodeposited Cu film was found to increase by 35% over time after plating. The RR increase was attributed to Cu film hardness reduction of 43% and grain growth from the initial 0.1urn at as-deposit to lum at the final stage at room temperature. The removal rate increase will translate to variations in manufacturing environment and are therefore unacceptable. It was found that annealing at ∼100C for 5 minutes in inert gas will stabilize Cu films and provide consistent CMP removal rate.

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

Enhanced Grain Growth of Electroplated Copper on Cobalt-Containing Seed Layer

2013 ◽  
Vol 160 (12) ◽  
pp. D3045-D3050 ◽  
Author(s):  
Q. Huang ◽  
B. C. Baker-O'Neal ◽  
C. Cabral ◽  
E. Simonyi ◽  
V. R. Deline ◽  
...  
Keyword(s):  
Grain Growth ◽  
Seed Layer ◽  
Electroplated Copper
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