Effects of wetting ability of plating electrolyte on Cu seed layer for electroplated copper film

2004 ◽  
Vol 22 (6) ◽  
pp. 2315-2320 ◽  
Author(s):  
Chi-Wen Liu ◽  
Jung-Chih Tsao ◽  
Ming-Shih Tsai ◽  
Ying-Lang Wang
Keyword(s):  
Seed Layer ◽  
Copper Film ◽  
Wetting Ability ◽  
Electroplated Copper

Enhanced Grain Growth of Electroplated Copper on Cobalt-Containing Seed Layer

2013 ◽  
Vol 160 (12) ◽  
pp. D3045-D3050 ◽  
Author(s):  
Q. Huang ◽  
B. C. Baker-O'Neal ◽  
C. Cabral ◽  
E. Simonyi ◽  
V. R. Deline ◽  
...  
Keyword(s):  
Grain Growth ◽  
Seed Layer ◽  
Electroplated Copper

MOCVD Copper Metallization for High Aspect Ratios TSV 3D Integration.

2018 ◽  
Vol 2018 (1) ◽  
pp. 000718-000727 ◽  
Author(s):  
Sabrina Fadloun ◽  
Dean Stephens ◽  
Patrice Gergaud ◽  
Elisabeth Blanquet ◽  
Thierry Mourier ◽  
...  
Keyword(s):  
Seed Layer ◽  
Copper Film ◽  
Chemical Vapor ◽  
Copper Metallization ◽  
Organic Chemical ◽  
Aspect Ratios ◽  
Organometallic Precursor ◽  
Strong Adhesion ◽  
Metal Organic ◽  
Copper Seed Layer

Abstract MOCVD (Metal-Organic Chemical Vapor Deposition) copper metallization was developed on 300mm wafers, to fulfil 3D Through-Silicon Via (TSV) interconnect requirements. Using a fluorine-free organometallic precursor, the bis(dimethylamino-2-propoxy)copper (II) Cu[OCHMeCH2NMe2]2 at low temperature deposition, we developed a high purity, low stress copper film with strong adhesion to a TiN barrier layer. Argon was used as a carrier gas and H2 and/or H2O as a co-reactant. This MOCVD technique offers good conformality observed with 10μm×120μmTSVs. The thin copper seed layer was successfully integrated on 300mm wafers. A new XRD protocol was developed to characterize the copper seed layer along the TSV sidewalls, revealed higher microstructure quality, lower stressed in the case of copper film deposited by CVD compared to those deposited by i-PVD.

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 562 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

ABSTRACTSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

Effect of Plating Condition on the Mechanical Properties and Residual Stress of Electroplated Copper Film

2007 ◽  
Vol 26-28 ◽  
pp. 637-640 ◽  
Author(s):  
Yoo Min Ahn ◽  
Yong Jun Ko ◽  
Hyun Joon Kim ◽  
Dong Ho Lee ◽  
Su Kei Lee ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Silicon Oxide ◽  
Copper Film ◽  
Organic Additives ◽  
Electro Deposition ◽  
Cu Film ◽  
Plating Solution ◽  
Electroplated Copper ◽  
Copper Structure

This paper discusses the effect of plating condition on the mechanical properties and residual stress of electroplated Cu film. The inlaid copper structure was fabricated on silicon wafer where silicon oxide was thermally grown. Seed layer was deposited by sputtering method followed by copper electro-deposition. Copper was electrodeposited with IBM paddle type electroplating machine Residual stress, hardness, elastic modulus, and surface roughness of electroplated copper film were investigated at various organic additives in plating solution and current types with a nanoindenter and a surface profilometer. The dishing amounts in chemical mechanical polishing (CMP) was also investigated at various additives. The results show that, in the case of residual stress, the copper film deposited at higher additive or PC current result in lower residual stress. The additives do not significantly affect the mechanical properties of Cu deposit.

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 564 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

AbstractSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

THE EFFECTS OF HF/PdCl2 ACTIVATION ON ELECTROLESS COPPER FILM PROPERTIES

2002 ◽  
Vol 16 (01n02) ◽  
pp. 197-204 ◽  
Author(s):  
W. L. GOH ◽  
K. T. TAN ◽  
M. S. TSE ◽  
K. Y. LIU
Keyword(s):  
Seed Layer ◽  
Negative Impact ◽  
Copper Film ◽  
Deposition Process ◽  
Film Properties ◽  
Seed Technology ◽  
Copper Electroplating ◽  
Cu Film ◽  
Electroless Copper ◽  
Cu Electroplating

A thin seed layer (usually deposited by PVD or CVD) is essential for the copper electroplating technology in ULSI metallizations. Electroless Cu deposition has been proposed as an alternative to the PVD or CVD Cu seed technology due to its conformal nature. The electroless (EL) Cu technology requires an activation or catalyzation (usually by HF/PdCl 2 solution) to initiate the deposition process. This paper reports on the effect of the HF/PdCl 2 activation on the electroless Cu film properties. The implications of the HF/PdCl2 activation method on electroless Cu role as seed layer for Cu electroplating are also discussed. Electroless Cu has a very conformal growth on the TiN/Ti substrate; with a deposition rate of 15 nm/min. Prolonged HF/PdCl 2 has a negative impact to the Cu (111) texture, roughness and resistivity. The RBS analysis show that only trace amount of Pd is incorporated into the electroless Cu film.

Effect of the Lattice Mismatch Between Copper Thin-Film Interconnection and Base Material on the Crystallinity of the Interconnection

2013 ◽  
Author(s):  
Chuanhong Fan ◽  
Ryosuke Furuya ◽  
Osamu Asai ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Seed Layer ◽  
Lattice Mismatch ◽  
Semiconductor Devices ◽  
Base Material ◽  
Diffraction Method ◽  
Copper Thin Film ◽  
New Material ◽  
Electroplated Copper ◽  
Electron Back Scattered Diffraction

In the present study, a new material, ruthenium whose lattice mismatch against copper is about 6%, was used as the seed layer of electroplated copper thin-film interconnections for semiconductor devices. The crystallinity of the copper thin-film interconnections was evaluated through an EBSD (Electron Back-scattered Diffraction) method and it is found that the crystallinity of them is improved drastically compared with those electroplated on the copper seed. The resistance and electro migration (EM) tolerance of the copper interconnections are also improved a lot compared with the interconnections electroplated on copper seed. Based on these results, a new guideline to design highly reliable electroplated copper thin-film interconnection has been established.

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