scholarly journals The Role Played in the Improvement of the SiO2/SiC Interface by a Thin SiO2 Film Thermally Grown Prior to Oxide Film Deposition

2012 ◽  
Vol 2 (1) ◽  
pp. P8-P10 ◽  
Author(s):  
E. Pitthan ◽  
R. Palmieri ◽  
S. A. Correa ◽  
G. V. Soares ◽  
H. I. Boudinov ◽  
...  
Keyword(s):  
Oxide Film ◽  
Sio2 Film ◽  
Film Deposition ◽  
Thermally Grown

SiO2 film deposition by XeCl laser ablation of fused silica

1995 ◽  
Vol 86 (1-4) ◽  
pp. 128-133 ◽  
Author(s):  
P. Baeri ◽  
R. Reitano ◽  
N. Marino
Keyword(s):  
Laser Ablation ◽  
Sio2 Film ◽  
Fused Silica ◽  
Film Deposition ◽  
Xecl Laser

Oxide film deposition by Gas-Cluster ion assisted deposition

1999 ◽  
Author(s):  
K. Murai ◽  
S. Tamura ◽  
M. Kiuchi ◽  
N. Umesaki ◽  
E. Minami ◽  
...  
Keyword(s):  
Oxide Film ◽  
Film Deposition ◽  
Cluster Ion

Violet Luminescence from Ge+-Implanted SiO2 Film on Si Substrate

1996 ◽  
Vol 438 ◽  
Author(s):  
Xi-Mao Bao ◽  
Ting Gao ◽  
Feng Yan ◽  
Song Tong
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Sio2 Film ◽  
Confinement Effect ◽  
Si Substrate ◽  
Ultraviolet Excitation ◽  
Violet Luminescence ◽  
Thermally Grown

AbstractThe SiO2 films thermally grown on crystalline Si were implanted with Ge ions at 60 keV with doses of l×1015 cm-2 and l×1016 cm-2, followed by thermal annealing at various temperatures. Under an ultraviolet excitation of 240 nm, the films exhibit intense violet luminescence with a peak at 396 nm. This peak is ascribed to the T1 → S0 transition in GeO formed during implantation and annealing. After 1100°C annealing, Ge clusters were formed in an SiO2 matrix and a PL peak at 840 nm, due to the quantum confinement effect, which was measured at low temperature (77 K).

Insight into the Reaction Scheme of SiO2 Film Deposition at Atmospheric Pressure

2013 ◽  
Vol 10 (12) ◽  
pp. 1061-1073 ◽  
Author(s):  
Katja Rügner ◽  
Rüdiger Reuter ◽  
Dirk Ellerweg ◽  
Teresa de los Arcos ◽  
Achim von Keudell ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Reaction Scheme ◽  
Sio2 Film ◽  
Film Deposition ◽  
Insight Into
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