Oxide film deposition by Gas-Cluster ion assisted deposition

1999 ◽  
Author(s):  
K. Murai ◽  
S. Tamura ◽  
M. Kiuchi ◽  
N. Umesaki ◽  
E. Minami ◽  
...  
Keyword(s):  
Oxide Film ◽  
Film Deposition ◽  
Cluster Ion

A New Type of Cluster-Ion Source for Thin Film Deposition

1990 ◽  
Vol 206 ◽  
Author(s):  
Hellmut Haberland ◽  
Martin Karrais ◽  
Martin Mall
Keyword(s):  
Electron Impact ◽  
Plane Surface ◽  
Thin Film Deposition ◽  
Ion Source ◽  
Film Deposition ◽  
Cluster Ions ◽  
Cluster Ion ◽  
Impact Ionisation ◽  
Aggregation Technique ◽  
High Degree

ABSTRACTAtoms are gas discharge sputtered from a solid target. They are condensed to form clusters using the gas aggregation technique. An intense beam of clusters of all solid materials can be obtained. Up to 80 % of the clusters can be ionised without using additional electron impact ionisation. Total deposition rates vary between 1 and 1000 Å per second depending on cluster diameter, which can be varied between 3 and 500 nm. Thin films of Al, Cu, and Mo have been produced so far. For non accelerated beams a weakly adhering mostly coulored deposit is obtained. Accelerating the cluster ions this changes to a strongly adhering film, having a shiny metallic appearance, and a very sharp and plane surface as seen in an electron microscope. The advantages compared to Kyoto ICB-method are: easy control of the cluster size, no electron impact ionisation, high degree of ionisation, and sputtering is used instead of thermal evaporation, which allows the use of high melting point materials.

scholarly journals The Role Played in the Improvement of the SiO2/SiC Interface by a Thin SiO2 Film Thermally Grown Prior to Oxide Film Deposition

2012 ◽  
Vol 2 (1) ◽  
pp. P8-P10 ◽  
Author(s):  
E. Pitthan ◽  
R. Palmieri ◽  
S. A. Correa ◽  
G. V. Soares ◽  
H. I. Boudinov ◽  
...  
Keyword(s):  
Oxide Film ◽  
Sio2 Film ◽  
Film Deposition ◽  
Thermally Grown

High Quality Oxide Film Formation by 02 Cluster Ion Assisted Deposition Technique

1997 ◽  
Vol 504 ◽  
Author(s):  
J. Matsuo ◽  
W. Qin ◽  
M. Akizuki ◽  
T. Yodoshi ◽  
I. Yamada
Keyword(s):  
Kinetic Energy ◽  
Oxide Film ◽  
Film Formation ◽  
Ion Beam ◽  
Ion Beams ◽  
Flat Panel Display ◽  
Low Resistivity ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Oxygen Cluster

ABSTRACTA new oxide film formation technique using gas-cluster ion beams has been developed. 02 cluster ions were used to irradiate during the evaporation of metal atoms, and PbOx and In203 films were grown. At the acceleration voltages above 5 kV, polycrystalline PbOx films preferentially oriented to (111) were obtained. A significant smoothing effect was observed with an acceleration voltage as low as 1 kV. An average surface roughness of 0.9 nm was obtained at 7 kV. Oxygen cluster ion beams are also utilized to grow In203 films, which are widely used as conductive-transparent films in flat panel display. In203 was deposited on glass or silicon substrates with simultaneous irradiation with an oxygen cluster ion beam. Highly transparent (80%) and low resistivity (<4×10−4 Ωcm) films were obtained with 7keV oxygen cluster ion beams. Kinetic energy of above 3keV is necessary to obtain low resistivity films. These results clearly indicate that the kinetic energy of the cluster is effectively used to enhance oxidation on the surface without radiation damage, in spite of the high acceleration voltages.

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