Effect of Content Ratio on Solution-Processed High-k Titanium-Aluminum Oxide Dielectric Films

H. Pu; H. Li; Z. Yang; Q. Zhou; C. Dong; Q. Zhang

doi:10.1149/2.007310ssl

Effect of Content Ratio on Solution-Processed High-k Titanium-Aluminum Oxide Dielectric Films

ECS Solid State Letters ◽

10.1149/2.007310ssl ◽

2013 ◽

Vol 2 (10) ◽

pp. N35-N38 ◽

Cited By ~ 9

Author(s):

H. Pu ◽

H. Li ◽

Z. Yang ◽

Q. Zhou ◽

C. Dong ◽

...

Keyword(s):

Aluminum Oxide ◽

Dielectric Films ◽

Solution Processed ◽

Content Ratio ◽

High K ◽

Titanium Aluminum

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High-k titanium–aluminum oxide dielectric films prepared by inorganic–organic hybrid solution

Journal of Sol-Gel Science and Technology ◽

10.1007/s10971-014-3400-y ◽

2014 ◽

Vol 71 (3) ◽

pp. 458-463 ◽

Cited By ~ 7

Author(s):

Juan Peng ◽

Chenhang Sheng ◽

Jifeng Shi ◽

Xifeng Li ◽

Jianhua Zhang

Keyword(s):

Aluminum Oxide ◽

Dielectric Films ◽

Organic Hybrid ◽

High K ◽

Hybrid Solution ◽

Titanium Aluminum

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Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors

Ceramics International ◽

10.1016/j.ceramint.2018.02.120 ◽

2018 ◽

Vol 44 (8) ◽

pp. 9125-9131 ◽

Cited By ~ 12

Author(s):

Wenwen Xia ◽

Guodong Xia ◽

Guangsheng Tu ◽

Xin Dong ◽

Sumei Wang ◽

...

Keyword(s):

Thin Film ◽

Aluminum Oxide ◽

Thin Film Transistors ◽

Low Voltage ◽

Sol Gel ◽

Dielectric Films ◽

Solution Processed ◽

High K

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Low-temperature solution-processed high-k ZrTiOx dielectric films for high-performance organic thin film transistors

Synthetic Metals ◽

10.1016/j.synthmet.2015.10.011 ◽

2015 ◽

Vol 210 ◽

pp. 282-287 ◽

Cited By ~ 9

Author(s):

Qian Zhang ◽

Guodong Xia ◽

Wenwen Xia ◽

Ji Zhou ◽

Sumei Wang

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Organic Thin Film Transistors ◽

Dielectric Films ◽

Organic Thin Film ◽

Solution Processed ◽

High K ◽

Temperature Solution

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Development of high-k hafnium–aluminum oxide dielectric films using sol–gel process

Journal of Materials Research ◽

10.1557/jmr.2014.186 ◽

2014 ◽

Vol 29 (15) ◽

pp. 1620-1625 ◽

Cited By ~ 7

Author(s):

Leyong Zhu ◽

Yana Gao ◽

Xifeng Li ◽

X.W. Sun ◽

Jianhua Zhang

Keyword(s):

Aluminum Oxide ◽

Sol Gel ◽

Dielectric Films ◽

High K ◽

Sol Gel Process ◽

Image Position

Abstract

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Solution-Processed High-k Dielectric Films for Wearable Neuroelectronics

ECS Meeting Abstracts ◽

10.1149/ma2018-01/26/1562 ◽

2018 ◽

Keyword(s):

Dielectric Films ◽

Solution Processed ◽

High K ◽

High K Dielectric

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Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices

Applied Physics Letters ◽

10.1063/1.1856137 ◽

2005 ◽

Vol 86 (4) ◽

pp. 042904 ◽

Cited By ~ 64

Author(s):

O. Auciello ◽

W. Fan ◽

B. Kabius ◽

S. Saha ◽

J. A. Carlisle ◽

...

Keyword(s):

Metal Oxide ◽

Aluminum Oxide ◽

Oxide Layer ◽

Gate Dielectric ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Titanium Aluminum ◽

Aluminum Oxide Layer

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Atmospheric-pressure plasma treatment toward high-quality solution-processed aluminum oxide gate dielectric films in thin-film transistors

Nanotechnology ◽

10.1088/1361-6528/ab4073 ◽

2019 ◽

Vol 30 (49) ◽

pp. 495702 ◽

Cited By ~ 3

Author(s):

Jintaek Park ◽

Nam-Kwang Cho ◽

Sung-Eun Lee ◽

Eun Goo Lee ◽

Junhee Lee ◽

...

Keyword(s):

Thin Film ◽

Aluminum Oxide ◽

Plasma Treatment ◽

Atmospheric Pressure ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Atmospheric Pressure Plasma ◽

Dielectric Films ◽

High Quality ◽

Solution Processed

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Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials

Journal of Applied Physics ◽

10.1063/1.2432401 ◽

2007 ◽

Vol 101 (3) ◽

pp. 034102 ◽

Cited By ~ 23

Author(s):

L. Shi ◽

Y. D. Xia ◽

B. Xu ◽

J. Yin ◽

Z. G. Liu

Keyword(s):

Thermal Stability ◽

Electrical Properties ◽

Aluminum Oxide ◽

Ultrathin Films ◽

Gate Dielectric ◽

Dielectric Materials ◽

High K ◽

Titanium Aluminum ◽

High K Gate Dielectric

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Improved Device Performance of MoTe2 nanoribbon Transistors with Solution-processed Ternary HfAlOx High-k Dielectric

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict49897.2020.9278339 ◽

2020 ◽

Author(s):

Yuan Liu ◽

Zijian Xie ◽

Li Yang ◽

Xiaokun Wen ◽

Wenyu Lei ◽

...

Keyword(s):

Device Performance ◽

Solution Processed ◽

High K ◽

High K Dielectric

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ELECTRODELESS MEASUREMENT TECHNIQUE OF COMPLEX DIELECTRIC PERMITTIVITY OF HIGH-K DIELECTRIC FILMS IN THE MILLIMETER WAVELENGTH RANGE

Progress In Electromagnetics Research M ◽

10.2528/pierm16100505 ◽

2016 ◽

Vol 52 ◽

pp. 161-167 ◽

Cited By ~ 1

Author(s):

Igor V. Kotelnikov ◽

Andrey G. Altynnikov ◽

Anatoly Konstantinovich Mikhailov ◽

Valentina V. Medvedeva ◽

Andrey Kozyrev

Keyword(s):

Dielectric Permittivity ◽

Wavelength Range ◽

Measurement Technique ◽

Complex Dielectric Permittivity ◽

Dielectric Films ◽

Millimeter Wavelength ◽

High K ◽

High K Dielectric

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