Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices

O. Auciello; W. Fan; B. Kabius; S. Saha; J. A. Carlisle; R. P. H. Chang; C. Lopez; E. A. Irene; R. A. Baragiola

doi:10.1063/1.1856137

Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices

Applied Physics Letters ◽

10.1063/1.1856137 ◽

2005 ◽

Vol 86 (4) ◽

pp. 042904 ◽

Cited By ~ 64

Author(s):

O. Auciello ◽

W. Fan ◽

B. Kabius ◽

S. Saha ◽

J. A. Carlisle ◽

...

Keyword(s):

Metal Oxide ◽

Aluminum Oxide ◽

Oxide Layer ◽

Gate Dielectric ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Titanium Aluminum ◽

Aluminum Oxide Layer

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HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.2396891 ◽

2007 ◽

Vol 90 (8) ◽

pp. 082911 ◽

Cited By ~ 18

Author(s):

N. Lu ◽

H.-J. Li ◽

J. J. Peterson ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Next Generation ◽

High K ◽

High K Gate Dielectric

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Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

Pramana ◽

10.1007/s12043-011-0052-0 ◽

2011 ◽

Vol 76 (4) ◽

pp. 657-666 ◽

Cited By ~ 4

Author(s):

LING-FENG MAO

Keyword(s):

Metal Oxide ◽

Charge Density ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Dielectric Constants ◽

Oxide Semiconductor ◽

High K ◽

Inversion Charge ◽

High K Gate Dielectric

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Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc13 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC13

Author(s):

Nam-Hyun Lee ◽

Hyung-wook Kim ◽

Bongkoo Kang

Keyword(s):

Elevated Temperature ◽

Metal Oxide ◽

Field Effect ◽

Dynamic Stress ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4979101 ◽

2017 ◽

Vol 110 (12) ◽

pp. 123506 ◽

Cited By ~ 5

Author(s):

L. N. Liu ◽

H. W. Choi ◽

J. P. Xu ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor ◽

High K Gate Dielectric

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Characterization of High Quality Nitrided Gate Dielectric Films Manufactured in Reduced Pressure Furnace for Ultralarge Scale Integration Complementary Metal Oxide Semiconductor Applications

Journal of The Electrochemical Society ◽

10.1149/1.1838538 ◽

1998 ◽

Vol 145 (5) ◽

pp. 1679-1683 ◽

Cited By ~ 3

Author(s):

Giwan Yoon ◽

Yefim Epstein

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dielectric Films ◽

High Quality ◽

Reduced Pressure ◽

Scale Integration

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Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4791676 ◽

2013 ◽

Vol 102 (7) ◽

pp. 073507 ◽

Cited By ~ 4

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

Szu-Han Ho ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hole Injection ◽

Hot Carrier ◽

High K ◽

Hot Carrier Degradation

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High-k titanium silicate thin films grown by reactive magnetron sputtering for complementary metal–oxide–semiconductor applications

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1722530 ◽

2004 ◽

Vol 22 (3) ◽

pp. 851 ◽

Cited By ~ 28

Author(s):

D. Brassard ◽

D. K. Sarkar ◽

M. A. El Khakani ◽

L. Ouellet

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Reactive Magnetron Sputtering ◽

Oxide Semiconductor ◽

Reactive Magnetron ◽

Titanium Silicate ◽

High K

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Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

Applied Physics Letters ◽

10.1063/1.3462301 ◽

2010 ◽

Vol 97 (2) ◽

pp. 022903 ◽

Cited By ~ 28

Author(s):

H. X. Xu ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

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A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology

Solid-State Electronics ◽

10.1016/j.sse.2010.01.007 ◽

2010 ◽

Vol 54 (4) ◽

pp. 368-377 ◽

Cited By ~ 5

Author(s):

Wu-Te Weng ◽

Yao-Jen Lee ◽

Horng-Chih Lin ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Metal Gate ◽

High K

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Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric

Applied Physics A ◽

10.1007/s00339-010-5665-5 ◽

2010 ◽

Vol 99 (4) ◽

pp. 903-906 ◽

Cited By ~ 12

Author(s):

H. X. Xu ◽

J. P. Xu ◽

C. X. Li ◽

C. L. Chan ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

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