Development of high-k hafnium–aluminum oxide dielectric films using sol–gel process

2014 ◽  
Vol 29 (15) ◽  
pp. 1620-1625 ◽  
Author(s):  
Leyong Zhu ◽  
Yana Gao ◽  
Xifeng Li ◽  
X.W. Sun ◽  
Jianhua Zhang
Keyword(s):  
Aluminum Oxide ◽  
Sol Gel ◽  
Dielectric Films ◽  
High K ◽  
Sol Gel Process ◽  
Image Position

Abstract

Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors

2018 ◽  
Vol 44 (8) ◽  
pp. 9125-9131 ◽  
Author(s):  
Wenwen Xia ◽  
Guodong Xia ◽  
Guangsheng Tu ◽  
Xin Dong ◽  
Sumei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Sol Gel ◽  
Dielectric Films ◽  
Solution Processed ◽  
High K

High-k titanium–aluminum oxide dielectric films prepared by inorganic–organic hybrid solution

2014 ◽  
Vol 71 (3) ◽  
pp. 458-463 ◽  
Author(s):  
Juan Peng ◽  
Chenhang Sheng ◽  
Jifeng Shi ◽  
Xifeng Li ◽  
Jianhua Zhang
Keyword(s):  
Aluminum Oxide ◽  
Dielectric Films ◽  
Organic Hybrid ◽  
High K ◽  
Hybrid Solution ◽  
Titanium Aluminum

Syntheses of Nd2O3 nanowires through sol–gel process assisted with porous anodic aluminum oxide (AAO) template

2009 ◽  
Vol 469 (1-2) ◽  
pp. 332-335 ◽  
Author(s):  
Xiaofei Qu ◽  
Jinhui Dai ◽  
Jintao Tian ◽  
Xiang Huang ◽  
Zhongfang Liu ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Anodic Aluminum Oxide ◽  
Sol Gel ◽  
Aao Template ◽  
Porous Anodic Aluminum Oxide ◽  
Anodic Aluminum ◽  
Sol Gel Process

GeO2 based high k dielectric material synthesized by sol–gel process

2007 ◽  
Vol 353 (5-7) ◽  
pp. 692-696 ◽  
Author(s):  
A.R. Phani ◽  
D. Di Claudio ◽  
M. Passacantando ◽  
S. Santucci
Keyword(s):  
Dielectric Material ◽  
Sol Gel ◽  
High K ◽  
Sol Gel Process ◽  
High K Dielectric

Properties of transparent yttrium oxide dielectric films prepared by sol–gel process

2012 ◽  
Vol 38 (2) ◽  
pp. 1677-1682 ◽  
Author(s):  
Chien-Yie Tsay ◽  
Chia-Hsiang Cheng ◽  
Yu-Wu Wang
Keyword(s):  
Yttrium Oxide ◽  
Sol Gel ◽  
Dielectric Films ◽  
Sol Gel Process

Effect of Content Ratio on Solution-Processed High-k Titanium-Aluminum Oxide Dielectric Films

2013 ◽  
Vol 2 (10) ◽  
pp. N35-N38 ◽  
Author(s):  
H. Pu ◽  
H. Li ◽  
Z. Yang ◽  
Q. Zhou ◽  
C. Dong ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Dielectric Films ◽  
Solution Processed ◽  
Content Ratio ◽  
High K ◽  
Titanium Aluminum

Corrosion-resistant fluoridated Ca–Mg–P composite coating on magnesium alloys prepared via hydrothermal assisted sol–gel process

2018 ◽  
Vol 33 (22) ◽  
pp. 3793-3800 ◽  
Author(s):  
Yangyang Jiang ◽  
Lingjun Zhu ◽  
Shu Cai ◽  
Sibo Shen ◽  
Yue Li ◽  
...  
Keyword(s):  
Composite Coating ◽  
Magnesium Alloys ◽  
Sol Gel ◽  
Corrosion Resistant ◽  
Sol Gel Process ◽  
Image Position

Abstract

Electron microscopy studies of PZT ferroelectric film capacitor structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1364-1365
Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  
Keyword(s):  
Electric Fields ◽  
Sol Gel ◽  
Ferroelectric Material ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Lead Zirconium Titanate ◽  
Si Substrate ◽  
Film Capacitor ◽  
Pzt Films ◽  
High Dielectric

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.

The crystallization of thin-film ceramics

1992 ◽  
Vol 50 (1) ◽  
pp. 338-339
Author(s):  
J.M. Schwartz ◽  
L.F. Francis ◽  
L.D. Schmidt ◽  
P.S. Schabes-Retchkiman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Processing Route ◽  
Small Areas ◽  
Ceramic Thin Films ◽  
Complex Shapes ◽  
Sol Gel Process ◽  
Ceramic Precursors ◽  
Crystalline Ceramic

Ceramic thin films and coatings are of interest for electrical, optical, magnetic and thermal barrier applications. Critical for improved properties in thin films is the development of specific microstructures during processing. To this end, the sol-gel method is advantageous as a versatile processing route. The sol-gel process involves depositing a solution containing metalorganic or colloidal ceramic precursors onto a substrate and heating the deposited layer to form a crystalline or non-crystalline ceramic coating. This route has several advantages, including the ability to create tailored microstructures and properties, to coat large or small areas, simple or complex shapes, and to more easily prepare multicomponent ceramics. Sol-gel derived coatings are amorphous in the as-deposited state and develop their crystalline structure and microstructure during heat-treatment. We are particularly interested in studying the amorphous to crystalline transformation, because many key features of the microstructure such as grain size and grain size distribution may be linked to this transformation.

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