Influence of Slurry Flow Rate on Material Removal Rate and Topography of Chemical Mechanically Planarizedc-Plane (0001) GaN Surface

2017 ◽  
Vol 6 (4) ◽  
pp. P113-P118 ◽  
Author(s):  
P. Parthiban ◽  
D. Das
Keyword(s):  
Flow Rate ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Slurry Flow ◽  
Slurry Flow Rate

Chemical Effect on the Material Removal Rate in the CMP of Silicon Wafers

2010 ◽  
Vol 126-128 ◽  
pp. 511-514
Author(s):  
Yong Guang Wang ◽  
Liang Chi Zhang ◽  
Altabul Biddut
Keyword(s):  
Hydrogen Peroxide ◽  
Flow Rate ◽  
Material Removal Rate ◽  
Material Removal ◽  
Ph Value ◽  
Removal Rate ◽  
Chemical Effect ◽  
Alumina Particles ◽  
Chemical Factors ◽  
Slurry Flow Rate

This paper investigates the effects of some chemical factors on the material removal rate (MRR) in chemo-mechanical polishing (CMP) of Si (100) wafers. The CMP was carried out in alkaline slurry using alumina and ceria particles with hydrogen peroxide. When using the alumina particles, the MRR initially decreases with increasing the slurry pH value until pH = 9. Nevertheless, the application of the ceria particles increases the MRR before the pH of the slurry reaches 10. A higher slurry flow rate brings about a greater MRR.

Optimizing Pad Groove Design and Polishing Kinematics for Reduced Shear Force, Low Force Fluctuation and Optimum Removal Rate Attributes of Copper CMP

2009 ◽  
Vol 1157 ◽  
Author(s):  
Yasa Sampurno ◽  
Ara Philipossian ◽  
Sian Theng ◽  
Takenao Nemoto ◽  
Xun Gu ◽  
...  
Keyword(s):  
Standard Deviation ◽  
Flow Rate ◽  
Rotation Rate ◽  
Shear Force ◽  
Removal Rate ◽  
Slurry Flow ◽  
Rotation Rates ◽  
Delamination Factor ◽  
Copper Cmp ◽  
Slurry Flow Rate

AbstractThe effect of polisher kinematics on average and standard deviation of shear force and removal rate in copper CMP is investigated. A ‘delamination factor’ consisting of average shear force, standard deviation of shear force, and required polishing time is defined and calculated based on the summation of normalized values of the above three components. In general, low values of the ‘delamination factor’ are preferred since it is believed that they minimize defects during polishing. In the first part of this study, 200-mm blanket copper wafers are polished at constant platen rotation of 25 RPM and polishing pressure of 1.5 PSI with different wafer rotation rates and slurry flow rates. Results indicate that at the slurry flow rate of 200 ml/min, ‘delamination factor’ is lower by 14 to 54 percent than at 400 ml/min. Increasing wafer rotation rate from 23 to 148 RPM reduces ‘delamination factor’ by approximately 50 percent and improves removal rate within-wafer-non-uniformity by appx. 2X. In the second part of this study, polishing is performed at the optimal slurry flow rate of 200 ml/min and wafer rotation rate of 148 RPM with different polishing pressures and platen rotation rates. Results indicate that ‘delamination factor’ is reduced significantly at the higher ratio of wafer to platen rotation rates.

scholarly journals Investigation of the Effects of Machining Parameters on Material Removal Rate in Abrasive Waterjet Turning

2014 ◽  
Vol 6 ◽  
pp. 624203 ◽  
Author(s):  
Iman Zohourkari ◽  
Mehdi Zohoor ◽  
Massimiliano Annoni
Keyword(s):  
Flow Rate ◽  
Material Removal Rate ◽  
Rotational Speed ◽  
Material Removal ◽  
Removal Rate ◽  
Traverse Speed ◽  
Abrasive Waterjet ◽  
Depth Of Cut ◽  
Machining Parameters ◽  
Cutting Head

The effects of the main operational machining parameters on the material removal rate (MRR) in abrasive waterjet turning (AWJT) are presented in this paper using a statistical approach. The five most common machining parameters such as water pressure, abrasive mass flow rate, cutting head traverse speed, workpiece rotational speed, and depth of cut have been put into a five-level central composite rotatable experimental design (CCRD). The main effects of parameters and the interaction among them were analyzed by means of the analysis of variance (ANOVA) and the response surfaces for MRR were obtained fitting a second-order polynomial function. It has been found that depth of cut and cutting head traverse speed are the most influential parameters, whereas the rotational speed is insignificant. In addition, the investigations show that interactions between traverse speed and pressure, abrasive mass flow rate and depth of cut, and pressure and depth of cut are significant on MRR. This result advances the AWJT state of the art. A complete model discussion has been reported drawing interesting considerations on the AWJT process characterising phenomena, where parameters interactions play a fundamental role.

Lapping of Polycrystalline Diamond Compact (PDC)

2010 ◽  
Vol 126-128 ◽  
pp. 469-474 ◽  
Author(s):  
Alex Fang ◽  
Elena Castell Perez ◽  
Alex Puerta Gomez ◽  
Song Sheng Zhou ◽  
Jason Sowers
Keyword(s):  
Flow Rate ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Polycrystalline Diamond ◽  
Size Distributions ◽  
Diamond Grit ◽  
Before And After ◽  
Polycrystalline Diamond Compact ◽  
Insight Into

This paper is aimed at developing an efficient process, in terms of the material removal rate (MRR), for the lapping of polycrystalline diamond compact (PDC). A carbomer based viscoelastic vehicle with a non-reversible shear-thinning property was first developed for the effective suspension of diamond grits used for lapping. The effects of key process parameters on the MRR such as lapping pressure, speed, vehicle concentration, diamond grit concentration, and vehicle flow rate have been investigated through experiments. To obtain an insight into what happened to the diamond grits during lapping, diamond abrasives were reclaimed and sieved after lapping. The grit size distributions of diamond abrasives before and after the lapping were then compared.

Experimental Investigations on Material Removal Rate and Surface Roughness in Lapping of Substrate Wafers: A Literature Review

2009 ◽  
Vol 404 ◽  
pp. 23-31 ◽  
Author(s):  
Wei Long Cong ◽  
Peng Fei Zhang ◽  
Zhi Jian Pei
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Target Thickness ◽  
Experimental Investigations ◽  
Plate Rotation ◽  
Slurry Flow Rate ◽  
High Degree ◽  
Wafer Surfaces

Lapping is an important material-removal process for manufacturing of substrate wafers. Objectives of lapping include removing subsurface damage in sliced wafers, thinning wafers to target thickness, and achieving a high degree of parallelism and flatness of wafer surfaces. This paper reviews the literature on lapping of substrate wafers. It presents reported experimental results on effects of input parameters (lapping pressure, plate rotation speed, abrasive grain size, slurry concentration, and slurry flow rate) on material removal rate and surface roughness.

scholarly journals Analysis and Optimization of Process Parameters in Abrasive Waterjet Contour Cutting of AISI 304L

Metals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1362
Author(s):  
Jennifer Milaor Llanto ◽  
Ana Vafadar ◽  
Muhammad Aamir ◽  
Majid Tolouei-Rad
Keyword(s):  
Surface Roughness ◽  
Mass Flow Rate ◽  
Mass Flow ◽  
Process Parameters ◽  
Flow Rate ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Traverse Speed ◽  
Abrasive Waterjet

Abrasive waterjet machining is applied in various industries for contour cutting of heat-sensitive and difficult-to-cut materials like austenitic stainless steel 304L, with the goal of ensuring high surface integrity and efficiency. In alignment with this manufacturing aspiration, experimental analysis and optimization were carried out on abrasive waterjet machining of austenitic stainless steel 304L with the objectives of minimizing surface roughness and maximizing material removal rate. In this machining process, process parameters are critical factors influencing contour cutting performance. Accordingly, Taguchi’s S/N ratio method has been used in this study for the optimization of process parameters. Further in this work, the impacts of input parameters are investigated, including waterjet pressure, abrasive mass flow rate, traverse speed and material thickness on material removal rate and surface roughness. The study reveals that an increasing level of waterjet pressure and abrasive mass flow rate achieved better surface integrity and higher material removal values. The average S/N ratio results indicate an optimum value of waterjet pressure at 300 MPa and abrasive mass flow rate of 500 g/min achieved minimum surface roughness and maximum material removal rate. It was also found that an optimized value of a traverse speed at 90 mm/min generates the lowest surface roughness and 150 mm/min produces the highest rate of material removed. Moreover, analysis of variance in the study showed that material thickness was the most influencing parameter on surface roughness and material removal rate, with a percentage contribution ranging 90.72–97.74% and 65.55–78.17%, respectively.

Effect of Slurry Flow Rate on Tribological, Thermal, and Removal Rate Attributes of Copper CMP

2004 ◽  
Vol 151 (7) ◽  
pp. G482 ◽  
Author(s):  
Z. Li ◽  
L. Borucki ◽  
I. Koshiyama ◽  
A. Philipossian
Keyword(s):  
Flow Rate ◽  
Removal Rate ◽  
Slurry Flow ◽  
Copper Cmp ◽  
Slurry Flow Rate

Investigation on Abrasive Free Copper Chemical Mechanical Planarization for Cu/low k and Cu/ultra low k interconnects

2005 ◽  
Vol 867 ◽  
Author(s):  
S. Balakumar ◽  
T. Haque ◽  
R. Kumar ◽  
A.S. Kumar ◽  
M. Rahman
Keyword(s):  
Flow Rate ◽  
Material Removal ◽  
Cumulative Distribution ◽  
Process Window ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Slurry Flow ◽  
Fatigue Wear ◽  
Slurry Flow Rate ◽  
Low K

AbstractAbrasive Free Copper Chemical Mechanical Polishing (AF-CMP) was developed for Cu/low k materials. Blanket film Cu removal rate of 6000 Å/min with very less non-uniformity of 3% achieved for polishing pressure of 1.5 psi. CMP process window and lower critical pressure were identified with pattern wafers. Material removal mechanism was studied using surface morphology of Copper blanket wafers polished using different pressure, rotation rate and slurry flow rate. Material Removal Mechanism (wear mechanism) such as Chemical wear (etching) and mechanical wear (fatigue wear, particle adhesion wear and abrasion wear) have been found. The increase of slurry flow rate and relative velocity and the decrease of pressure give the dominance of chemical wear in material removal mechanism, and vice versa. Dishing control was achieved during Cu polish using different carrier/platen speed for Cu/SiLKTM patterned wafers. The cumulative distribution of the metal line-to-line leakage current measurements of wafers shows good performance and it is comparable to abrasive process.

Study on the Key Parameters in Etching of Fused Silica Using Atmospheric Inductively Coupled Plasma

2014 ◽  
Vol 625 ◽  
pp. 469-474 ◽  
Author(s):  
Qiang Xin ◽  
Bo Wang ◽  
Hui Liang Jin ◽  
Na Li ◽  
Duo Li ◽  
...  
Keyword(s):  
Flow Rate ◽  
Material Removal Rate ◽  
Atmospheric Pressure ◽  
Inductively Coupled Plasma ◽  
Material Removal ◽  
Removal Rate ◽  
Substrate Surface ◽  
Processing Parameters ◽  
Fused Silica ◽  
Inductively Coupled

Atmospheric Pressure Plasma Processing (APPP) of silicon-based optics and wafers is a form of chemical etching technology developed in recent years. The material removal rate is comparable to those of conventional mechanical processing methods in precision fabrication. Moreover, there is no mechanical contact or physical loading on the substrate surface, hence no surface or sub-surface damages are induced. Inductively coupled plasma is one realization of APPP. In this work, inductively coupled plasma torch is used to generate plasma and excite etchant particles at atmospheric pressure. These active particles then diffused to the workpiece surface, react with its atoms to form volatile products. The activity and number of particles in plasma are influenced by processing parameters such as input power, distance between nozzle and substrate surface, flow rate of plasma gas argon and precursor gas CF4. These factors have various impacts on material removal rate. Processing experiments are conducted on fused silica to investigate the parameters’ influences on material removal rate. The basic interaction between substrate surface and plasma is illustrated, then the relationships between processing parameters and material removal rate are analyzed. From the experiments some trends are derived. Material removal rate rises with the increase of power and flow rate of CF4, whereas decreases with the increase of processing distance, etc. The etching footprint is proved to be near Gaussian-shaped and believed to have high potential for deterministic surface processing.

scholarly journals Mathematical Modelling of Material Removal Rate and Diameter of Overcut for Sodalime glass through Pressurized Flow ECDM Process by Response Surface Methodology

2019 ◽  
Vol 8 (5S3) ◽  
pp. 372-375
Keyword(s):  
Mathematical Model ◽  
Flow Rate ◽  
Material Removal Rate ◽  
Material Removal ◽  
Electrolyte Concentration ◽  
Removal Rate ◽  
Duty Factor ◽  
Component Ratio ◽  
Machining Parameters ◽  
Electrolyte Flow

The effect of electrolyte concentration, voltage, duty factor and electrolyte flow rate on material removal rate (MRR) and diameter of overcut (DOC) of the micro-hole machining of sodalime has been studied. The experimental values changed with the theoretical calculation in the range of 3 – 10 %. This mathematical model showed that decreasing electrolytic concentration reduces MRR and DOC. Pressurized flow Electrochemical Discharge Machining (pf-ECDM) can meet these differences. In order to put this phenomenon to use many experiments were experimented to machine holes on glass. Since parameters like electrolyte concentration, voltage, duty factor and electrolyte flow rate play an important role in MRR and DOC it needs to be calculated in order to improve the capability of this technology in machining difficult and high aspect ratio features. A mathematical model has been extensively developed to know the role of electrolyte concentration, voltage, duty factor and electrolyte flow in MRR and DOC of the process. However, machining excessive component ratio elements on ceramics like glass stays an ambitious challenge due to overcut. Although, electrical discharge machining (EDM) and electrochemical machining (ECM) are properly set up non-traditional strategies to meet these challenges, they are restrained to electrically conductive materials. In order to execute functionalities like excessive power and sustainability with minimal use of space, the raw substances used need to possess desirable mechanical, chemical and physical properties. Experimental research has been conducted, and the model was proven below various machining parameters. Demand for miniaturized merchandise is ever growing as they accomplish the venture of supplying the preferred functionalities with high efficiency using minimalistic raw material. These researches proved that growing the voltage in pf-ECDM plays a primary function in growing the MRR of the machined features.

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