Effect of Slurry Flow Rate on Tribological, Thermal, and Removal Rate Attributes of Copper CMP

2004 ◽  
Vol 151 (7) ◽  
pp. G482 ◽  
Author(s):  
Z. Li ◽  
L. Borucki ◽  
I. Koshiyama ◽  
A. Philipossian
Keyword(s):  
Flow Rate ◽  
Removal Rate ◽  
Slurry Flow ◽  
Copper Cmp ◽  
Slurry Flow Rate

Optimizing Pad Groove Design and Polishing Kinematics for Reduced Shear Force, Low Force Fluctuation and Optimum Removal Rate Attributes of Copper CMP

2009 ◽  
Vol 1157 ◽  
Author(s):  
Yasa Sampurno ◽  
Ara Philipossian ◽  
Sian Theng ◽  
Takenao Nemoto ◽  
Xun Gu ◽  
...  
Keyword(s):  
Standard Deviation ◽  
Flow Rate ◽  
Rotation Rate ◽  
Shear Force ◽  
Removal Rate ◽  
Slurry Flow ◽  
Rotation Rates ◽  
Delamination Factor ◽  
Copper Cmp ◽  
Slurry Flow Rate

AbstractThe effect of polisher kinematics on average and standard deviation of shear force and removal rate in copper CMP is investigated. A ‘delamination factor’ consisting of average shear force, standard deviation of shear force, and required polishing time is defined and calculated based on the summation of normalized values of the above three components. In general, low values of the ‘delamination factor’ are preferred since it is believed that they minimize defects during polishing. In the first part of this study, 200-mm blanket copper wafers are polished at constant platen rotation of 25 RPM and polishing pressure of 1.5 PSI with different wafer rotation rates and slurry flow rates. Results indicate that at the slurry flow rate of 200 ml/min, ‘delamination factor’ is lower by 14 to 54 percent than at 400 ml/min. Increasing wafer rotation rate from 23 to 148 RPM reduces ‘delamination factor’ by approximately 50 percent and improves removal rate within-wafer-non-uniformity by appx. 2X. In the second part of this study, polishing is performed at the optimal slurry flow rate of 200 ml/min and wafer rotation rate of 148 RPM with different polishing pressures and platen rotation rates. Results indicate that ‘delamination factor’ is reduced significantly at the higher ratio of wafer to platen rotation rates.

Evaluation of Pad Groove Designs under Reduced Slurry Flow Rate Conditions during Copper CMP

2008 ◽  
Vol 155 (10) ◽  
pp. H812 ◽  
Author(s):  
D. Rosales-Yeomans ◽  
D. DeNardis ◽  
L. Borucki ◽  
T. Suzuki ◽  
Y. Sampurno ◽  
...  
Keyword(s):  
Flow Rate ◽  
Slurry Flow ◽  
Copper Cmp ◽  
Slurry Flow Rate

Effects of Slurry Flow Rate and Pad Conditioning Temperature on Dishing, Erosion, and Metal Loss during Copper CMP

2006 ◽  
Vol 153 (5) ◽  
pp. G372 ◽  
Author(s):  
Subrahamanya Mudhivarthi ◽  
Norm Gitis ◽  
Suresh Kuiry ◽  
Michael Vinogradov ◽  
Ashok Kumar
Keyword(s):  
Flow Rate ◽  
Metal Loss ◽  
Slurry Flow ◽  
Conditioning Temperature ◽  
Pad Conditioning ◽  
Copper Cmp ◽  
Slurry Flow Rate

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

2021 ◽  
pp. 095440622098384
Author(s):  
Mayank Srivastava ◽  
Pulak M Pandey
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Flow Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Slurry Flow ◽  
Magnetorheological Finishing ◽  
Finishing Process ◽  
Process Factors ◽  
Slurry Flow Rate

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

Optimization of chemical mechanical polishing parameters on surface roughness of steel substrate with aluminum nanoparticles via Taguchi approach

2014 ◽  
Vol 66 (6) ◽  
pp. 685-690 ◽  
Author(s):  
De-Xing Peng
Keyword(s):  
Flow Rate ◽  
Chemical Mechanical Polishing ◽  
Steel Substrate ◽  
Value Added ◽  
Mechanical Polishing ◽  
Slurry Flow ◽  
Average Roughness ◽  
Content Type ◽  
Optimization Parameters ◽  
Slurry Flow Rate

Purpose – The purpose of this paper is to investigate the effects of abrasive contents, oxidizer contents, slurry flow rate and polishing time in achieving a mirror-like finish on polished surfaces. Chemical mechanical polishing (CMP) is now widely used in the aerospace industry for global planarization of large, high value-added components. Design/methodology/approach – Optimal parameters are applied in experimental trials performed to investigate the effects of abrasive contents, oxidizer contents, slurry flow rate and polishing time in achieving a mirror-like finish on polished surfaces. Taguchi design experiments are performed to optimize the parameters of CMP performed in steel specimens. Findings – Their optimization parameters were found out; the surface scratch, polishing fog and remaining particles were reduced; and the flatness of the steel substrate was guaranteed. The average roughness (Ra) of the surface was reduced to 6.7 nm under the following process parameters: abrasive content of 2 weight per cent, oxidizer content of 2 weight per cent, slurry flow rate of 100 ml/min and polishing time of 20 min. Originality/value – To meet the final process requirements, the CMP process must provide a good planarity, precise selectivity and a defect-free surface. Surface planarization of components used to fabricate aerospace devices is achieved by CMP process, which enables global planarization by combining chemical and mechanical interactions.

scholarly journals Ballast Flow Characteristics of Discharging Pipeline in Shield Slurry System

2019 ◽  
Vol 9 (24) ◽  
pp. 5402
Author(s):  
Yang Wang ◽  
Yimin Xia ◽  
Xuemeng Xiao ◽  
Huiwang Xu ◽  
Peng Chen ◽  
...  
Keyword(s):  
Mass Flow Rate ◽  
Mass Flow ◽  
Flow Rate ◽  
Flow Characteristics ◽  
Slurry Flow ◽  
Volumetric Concentration ◽  
Mass Percentage ◽  
Pipe System ◽  
Pipeline Wall ◽  
Slurry Flow Rate

We adopted two-way coupling of discrete and finite elements to examine the non-spherical ballast flow characteristics in a slurry pipe system during a shield project. In the study, we considered the slurry rheological property and the flake shape of the ballast. A ballast size between 17 and 32 mm under different slurry flow rates and ballast volumetric concentration conditions was investigated for determining the law through which the mass flow rate, detained mass percentage, and ballast distribution state are influenced. The results indicate that increasing slurry flow rate and the ballast volumetric concentration increase the mass flow rate; the influence of the latter is stronger. Increases in both in the slurry flow rate and the ballast volumetric concentration can reduce the detained mass percentage in the slurry discharging pipeline, whereas increasing the ballast size has the opposite effect. The increase in both the slurry flow rate and the ballast size changes the ballast motion state. Experiments verified the numerical lifting model of the ballast in the vertical pipeline. The measurements of the actual pipeline wall thickness verified that the simulation results regarding the ballast distribution were accurate.

Numerical Analysis of Slurry Flow and Contact Pressure in CMP Considering the Effects of Retaining Ring

2016 ◽  
Vol 1136 ◽  
pp. 338-342
Author(s):  
Chao Li ◽  
Ping Zhou ◽  
Zhu Ji Jin ◽  
Bi Zhang ◽  
Shuang Ji Shi
Keyword(s):  
Contact Pressure ◽  
First Generation ◽  
Second Generation ◽  
Removal Rate ◽  
Elastohydrodynamic Lubrication ◽  
Contact Pressure Distribution ◽  
Slurry Flow ◽  
Retaining Ring ◽  
Edge Exclusion ◽  
Slurry Flow Rate

Retaining ring which keeps the wafer in place is an essential component in chemical mechanical polishing. Meanwhile, it helps to reduce the edge exclusion region where the material removal rate deviates significantly from that of the central region of the wafer. However, it may increase the slurry flow resistance and hence decrease the slurry flow rate. For properly designing a retaining ring of reasonable structure, the effects of retaining ring on slurry flow and contact pressure distribution in CMP process are analyzed by the mixed elastohydrodynamic lubrication model. It is found that the slurry flow is sensitive to the protrusion height of retaining ring used in the first generation carrier. The same as the first generation carrier, the slurry flow is obviously reduced with increasing pressure acting on the retaining ring in the second generation carrier. In addition, the floating retaining ring used in the second generation CMP carrier has better performance and is more controllable than the fixed retaining ring used in the first generation CMP carrier.

Chemical Effect on the Material Removal Rate in the CMP of Silicon Wafers

2010 ◽  
Vol 126-128 ◽  
pp. 511-514
Author(s):  
Yong Guang Wang ◽  
Liang Chi Zhang ◽  
Altabul Biddut
Keyword(s):  
Hydrogen Peroxide ◽  
Flow Rate ◽  
Material Removal Rate ◽  
Material Removal ◽  
Ph Value ◽  
Removal Rate ◽  
Chemical Effect ◽  
Alumina Particles ◽  
Chemical Factors ◽  
Slurry Flow Rate

This paper investigates the effects of some chemical factors on the material removal rate (MRR) in chemo-mechanical polishing (CMP) of Si (100) wafers. The CMP was carried out in alkaline slurry using alumina and ceria particles with hydrogen peroxide. When using the alumina particles, the MRR initially decreases with increasing the slurry pH value until pH = 9. Nevertheless, the application of the ceria particles increases the MRR before the pH of the slurry reaches 10. A higher slurry flow rate brings about a greater MRR.

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