scholarly journals Enhancing Blue Emission in Ce Doped Silicon Oxynitrides Based Electroluminescent Devices

2019 ◽  
Vol 8 (12) ◽  
pp. R157-R163
Author(s):  
F. Ehré ◽  
C. Dufour ◽  
O. Blázquez ◽  
B. Garrido ◽  
W. M. Jadwisienczak ◽  
...  
Keyword(s):  
Blue Emission ◽  
Electroluminescent Devices ◽  
Doped Silicon ◽  
Silicon Oxynitrides

(Invited) Enhancing the Blue Emission in Ce Doped Silicon Oxynitrides Thin Films for Electroluminescence Device Applications

2018 ◽  
Vol 85 (3) ◽  
pp. 9-21
Author(s):  
Florian Ehre ◽  
Christian Dufour ◽  
Oriol Blázquez ◽  
Blas Garrido ◽  
Wojciech Jadwisienczak ◽  
...  
Keyword(s):  
Thin Films ◽  
Blue Emission ◽  
Doped Silicon ◽  
Electroluminescence Device ◽  
Device Applications ◽  
Silicon Oxynitrides

Discrete Conjugated Poly(arylene ether) Compounds for Blue Emission Electroluminescent Devices

2019 ◽  
Vol 1 (12) ◽  
pp. 3343-3353
Author(s):  
Hsin-Yi Wen ◽  
Tzu-Sheng Huang ◽  
Huai-De Zhang ◽  
Mei-Ying Chang ◽  
Wen-Yao Huang
Keyword(s):  
Blue Emission ◽  
Electroluminescent Devices ◽  
Arylene Ether

Blue emission from Tm-doped GaN electroluminescent devices

1999 ◽  
Vol 75 (15) ◽  
pp. 2184-2186 ◽  
Author(s):  
A. J. Steckl ◽  
M. Garter ◽  
D. S. Lee ◽  
J. Heikenfeld ◽  
R. Birkhahn
Keyword(s):  
Blue Emission ◽  
Electroluminescent Devices

Optoelectronic Properties of Ce3+ Doped Silicon Oxide and Oxynitride Electroluminescent Devices

2020 ◽  
Vol MA2020-01 (52) ◽  
pp. 2935-2935
Author(s):  
Yuxuan Gao ◽  
Aysegul Abdelal ◽  
Fahmida Azmi ◽  
Zahra Khatami ◽  
Peter Mascher
Keyword(s):  
Silicon Oxide ◽  
Optoelectronic Properties ◽  
Electroluminescent Devices ◽  
Doped Silicon

Blue emission of Ce3+ in lanthanide silicon oxynitride phosphors

2007 ◽  
Vol 22 (7) ◽  
pp. 1933-1941 ◽  
Author(s):  
Benjamin Dierre ◽  
Rong-Jun Xie ◽  
Naoto Hirosaki ◽  
T. Sekiguchi
Keyword(s):  
Diffuse Reflection ◽  
Blue Emission ◽  
Thermal Quenching ◽  
Nitrogen Atmosphere ◽  
Diffuse Reflection Spectrum ◽  
Concentration Quenching ◽  
Silicon Oxynitride ◽  
Photoluminescence Spectra ◽  
Temperature Dependent ◽  
Silicon Oxynitrides

Ce3+-activated lanthanide silicon oxynitride (La5Si3O12N, La4SiO7N2, LaSiO2N, and La3Si8O4N11) phosphors were prepared by firing the mixture of La2O3, Si3N4, SiO2, and CeO2 at 1500–1600 °C under a 0.5 MPa nitrogen atmosphere. Diffuse reflection spectrum, photoluminescence spectra, and temperature-dependent luminescence of these phosphors are presented in this work. A blue emission of Ce3+ in all lanthanide silicon oxynitrides was observed under ultraviolet irradiation, which is strongest in La3Si8O4N11:Ce3+. The concentration quenching and thermal quenching of the samples were discussed.

Blue emission dye doped polymer-based electroluminescent devices for display

1996 ◽  
Author(s):  
Haiyan An ◽  
Shanhua Xue ◽  
Baijun Chen ◽  
Jingying Hou ◽  
Jingsong Huang ◽  
...  
Keyword(s):  
Blue Emission ◽  
Electroluminescent Devices ◽  
Doped Polymer

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

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