(Invited) Enhancing the Blue Emission in Ce Doped Silicon Oxynitrides Thin Films for Electroluminescence Device Applications

2018 ◽  
Vol 85 (3) ◽  
pp. 9-21
Author(s):  
Florian Ehre ◽  
Christian Dufour ◽  
Oriol Blázquez ◽  
Blas Garrido ◽  
Wojciech Jadwisienczak ◽  
...  
Keyword(s):  
Thin Films ◽  
Blue Emission ◽  
Doped Silicon ◽  
Electroluminescence Device ◽  
Device Applications ◽  
Silicon Oxynitrides

scholarly journals Enhancing Blue Emission in Ce Doped Silicon Oxynitrides Based Electroluminescent Devices

2019 ◽  
Vol 8 (12) ◽  
pp. R157-R163
Author(s):  
F. Ehré ◽  
C. Dufour ◽  
O. Blázquez ◽  
B. Garrido ◽  
W. M. Jadwisienczak ◽  
...  
Keyword(s):  
Blue Emission ◽  
Electroluminescent Devices ◽  
Doped Silicon ◽  
Silicon Oxynitrides

SrS:Ce3+ thin films for electroluminescence device applications deposited by electron-beam evaporation deposition method

2016 ◽  
Vol 183 ◽  
pp. 191-196 ◽  
Author(s):  
Shubhra Mishra ◽  
D.S. Kshatri ◽  
Ayush Khare ◽  
Sanjay Tiwari ◽  
Prabhat K. Dwivedi
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Deposition Method ◽  
Electroluminescence Device ◽  
Device Applications

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Mixed Nb2O5:MoO3 (95:5 and 85:15) thin films and their properties for electrochromic device applications

2016 ◽  
Vol 27 (8) ◽  
pp. 7809-7821 ◽  
Author(s):  
N. Usha ◽  
R. Sivakumar ◽  
C. Sanjeeviraja ◽  
R. Balasubramaniam ◽  
Y. Kuroki
Keyword(s):  
Thin Films ◽  
Electrochromic Device ◽  
Device Applications

Optical Properties of Zinc Sulphide Thin Films Coated with Aqueous Organic Dye Extract for Solar and Optoelectronic Device Applications

2021 ◽  
Vol 50 (5) ◽  
pp. 2576-2583
Author(s):  
Uche Paul Onochie ◽  
Sunday Chukwuyem Ikpeseni ◽  
Anthony Egwu Igweoko ◽  
Hilary Ijeoma Owamah ◽  
Chinecherem Collins Aluma ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optoelectronic Device ◽  
Zinc Sulphide ◽  
Organic Dye ◽  
Device Applications

scholarly journals The improvement of CoZrTaB thin films on different substrates for flexible device applications

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025139
Author(s):  
Yanze Wu ◽  
I-Chen Yeng ◽  
Hongbin Yu
Keyword(s):  
Thin Films ◽  
Flexible Device ◽  
Device Applications

Facile Fabrication Procedure for C60-Doped Silicon Oxide Thin Films

1997 ◽  
Vol 26 (10) ◽  
pp. 995-996 ◽  
Author(s):  
Isao Hasegawa ◽  
Koji Shibusa ◽  
Satoshi Kobayashi ◽  
Shuichi Nonomura ◽  
Shoji Nitta
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Oxide Thin Films ◽  
Doped Silicon ◽  
Fabrication Procedure ◽  
Facile Fabrication

Raman Spectra of Molecularly-Ordered 1-TNATA Thin Films and Organic Electroluminescence Device Properties

2009 ◽  
Vol 498 (1) ◽  
pp. 193-202 ◽  
Author(s):  
Youngson Choe ◽  
Young-Rae Cho ◽  
Dosoon Kang ◽  
Wonho Kim ◽  
Dae-Won Park
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Organic Electroluminescence ◽  
Electroluminescence Device ◽  
Device Properties
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