Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 400 C

2012 ◽  
Vol 45 (3) ◽  
pp. 421-428 ◽  
Author(s):  
Y. Nakao ◽  
A. Teramoto ◽  
T. Watanabe ◽  
R. Kuroda ◽  
T. Suwa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
High Density ◽  
Plasma Damage

Impact of Metal Pad Etch-Induced Plasma Damage on Dynamic Retention Time Degradation during High Temperature Stress in High Density DRAM Technology

2005 ◽  
Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Retention Time ◽  
High Temperature Stress ◽  
High Density ◽  
Cell Junction ◽  
Antenna Effect ◽  
Plasma Damage ◽  
Root Cause ◽  
Wafer Processing

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.

The electrical properties of schungite-containing compositions based on polypropylene and high-density polyethylene

2007 ◽  
Vol 81 (11) ◽  
pp. 1863-1869
Author(s):  
S. S. Rozhkov ◽  
N. F. Kedrina ◽  
V. A. Timofeeva ◽  
I. A. Chmutin ◽  
N. G. Ryvkina ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Density Polyethylene ◽  
High Density

Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma

2003 ◽  
Vol 216 (1-4) ◽  
pp. 246-251 ◽  
Author(s):  
Ichiro Ohshima ◽  
Weitao Cheng ◽  
Yasuhiro Ono ◽  
Masaaki Higuchi ◽  
Masaki Hirayama ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectrics ◽  
High Density ◽  
Density Plasma
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