Comprehensive Demonstration and Physical Origin of HfO2 Gate Stacks: Band Alignment, VFB Shift and Fermi Level Pinning

2012 ◽  
Vol 45 (3) ◽  
pp. 119-135
Author(s):  
X. L. Wang ◽  
W. Wang ◽  
K. Han ◽  
J. Zhang ◽  
J. Xiang ◽  
...  
Keyword(s):  
Fermi Level ◽  
Band Alignment ◽  
Gate Stacks ◽  
Physical Origin ◽  
Fermi Level Pinning

Fermi level pinning by defects in HfO2-metal gate stacks

2007 ◽  
Vol 91 (13) ◽  
pp. 132912 ◽  
Author(s):  
J. Robertson ◽  
O. Sharia ◽  
A. A. Demkov
Keyword(s):  
Fermi Level ◽  
Gate Stacks ◽  
Metal Gate ◽  
Fermi Level Pinning

Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

2008 ◽  
Vol 92 (13) ◽  
pp. 132911 ◽  
Author(s):  
Peter Broqvist ◽  
Audrius Alkauskas ◽  
Alfredo Pasquarello
Keyword(s):  
Oxygen Vacancy ◽  
Fermi Level ◽  
Gate Stacks ◽  
Fermi Level Pinning ◽  
Band Alignments ◽  
Defect Levels

Defects responsible for the Fermi level pinning in n+ poly-Si/HfO2 gate stacks

2010 ◽  
Vol 97 (24) ◽  
pp. 242910 ◽  
Author(s):  
Byungki Ryu ◽  
K. J. Chang
Keyword(s):  
Fermi Level ◽  
Gate Stacks ◽  
Fermi Level Pinning

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning
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