Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

2008 ◽  
Vol 92 (13) ◽  
pp. 132911 ◽  
Author(s):  
Peter Broqvist ◽  
Audrius Alkauskas ◽  
Alfredo Pasquarello
Keyword(s):  
Oxygen Vacancy ◽  
Fermi Level ◽  
Gate Stacks ◽  
Fermi Level Pinning ◽  
Band Alignments ◽  
Defect Levels

Fermi level pinning by defects in HfO2-metal gate stacks

2007 ◽  
Vol 91 (13) ◽  
pp. 132912 ◽  
Author(s):  
J. Robertson ◽  
O. Sharia ◽  
A. A. Demkov
Keyword(s):  
Fermi Level ◽  
Gate Stacks ◽  
Metal Gate ◽  
Fermi Level Pinning

Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning

2006 ◽  
Vol 45 (No. 49) ◽  
pp. L1289-L1292 ◽  
Author(s):  
Yasushi Akasaka ◽  
Genji Nakamura ◽  
Kenji Shiraishi ◽  
Naoto Umezawa ◽  
Kikuo Yamabe ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Fermi Level ◽  
Fermi Level Pinning

CdS and Cd-Free Buffer Layers on Solution Phase Grown Cu2ZnSn(SxSe1- x)4 :Band Alignments and Electronic Structure Determined with Femtosecond Ultraviolet Photoelectron Spectroscopy

2014 ◽  
Vol 1638 ◽  
Author(s):  
Richard Haight ◽  
Aaron Barkhouse ◽  
Wei Wang ◽  
Yu Luo ◽  
Xiaoyan Shao ◽  
...  
Keyword(s):  
Fermi Level ◽  
Photoelectron Spectroscopy ◽  
Solution Phase ◽  
Buffer Layers ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Band Bending ◽  
Pump Probe ◽  
Fermi Level Pinning ◽  
Band Alignments

ABSTRACTThe heterojunctions formed between solution phase grown Cu2ZnSn(SxSe1- x)4 (CZTS,Se) and a number of important buffer materials including CdS, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission spectroscopy (fs-UPS) and photovoltage spectroscopy. With this approach we extract the magnitude and direction of the CZTS,Se band bending, locate the Fermi level within the band gaps of absorber and buffer and measure the absorber/buffer band offsets under flatband conditions. We will also discuss two-color pump/probe experiments in which the band bending in the buffer layer can be independently determined. Finally, studies of the bare CZTS,Se surface will be discussed including our observation of mid-gap Fermi level pinning and its relation to Voc limitations and bulk defects.

Comprehensive Demonstration and Physical Origin of HfO2 Gate Stacks: Band Alignment, VFB Shift and Fermi Level Pinning

2012 ◽  
Vol 45 (3) ◽  
pp. 119-135
Author(s):  
X. L. Wang ◽  
W. Wang ◽  
K. Han ◽  
J. Zhang ◽  
J. Xiang ◽  
...  
Keyword(s):  
Fermi Level ◽  
Band Alignment ◽  
Gate Stacks ◽  
Physical Origin ◽  
Fermi Level Pinning

Defects responsible for the Fermi level pinning in n+ poly-Si/HfO2 gate stacks

2010 ◽  
Vol 97 (24) ◽  
pp. 242910 ◽  
Author(s):  
Byungki Ryu ◽  
K. J. Chang
Keyword(s):  
Fermi Level ◽  
Gate Stacks ◽  
Fermi Level Pinning

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning
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