Worst Case Stress Conditions for Hot Carrier Degradation with Technology Nodes from 0.35µm to 45nm

2019 ◽  
Vol 44 (1) ◽  
pp. 1151-1155 ◽  
Author(s):  
Zhaoxing Chen ◽  
Xiaoli Ji ◽  
Fen Yan ◽  
Yi Shi ◽  
Yongliang Song ◽  
...  
Keyword(s):  
Stress Conditions ◽  
Worst Case ◽  
Hot Carrier ◽  
Technology Nodes ◽  
Hot Carrier Degradation

Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit

2017 ◽  
Vol 64 (3) ◽  
pp. 923-929 ◽  
Author(s):  
Hamed Kamrani ◽  
Dominic Jabs ◽  
Vincenzo d'Alessandro ◽  
Niccolo Rinaldi ◽  
Thomas Jacquet ◽  
...  
Keyword(s):  
Stress Conditions ◽  
Hot Carrier ◽  
Degradation Modeling ◽  
Hot Carrier Degradation

Worst Case Stress Conditions for Hot Carrier Induced Degradation of p-Channel SOI MOSFETs

2006 ◽  
Author(s):  
D.P. Ioannou ◽  
R. Mishra ◽  
D.E. Ioannou ◽  
S.T. Liu ◽  
M. Flanery ◽  
...  
Keyword(s):  
Stress Conditions ◽  
Worst Case ◽  
Hot Carrier

Worst case stress conditions for hot carrier induced degradation of p-channel SOI MOSFETs

2006 ◽  
Vol 50 (6) ◽  
pp. 929-934 ◽  
Author(s):  
D.P. Ioannou ◽  
R. Mishra ◽  
D.E. Ioannou ◽  
S.T. Liu ◽  
H.L. Hughes
Keyword(s):  
Stress Conditions ◽  
Worst Case ◽  
Hot Carrier

Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes

2021 ◽  
Vol 42 (10) ◽  
pp. 1420-1423
Author(s):  
Fong-Min Ciou ◽  
Jia-Hong Lin ◽  
Po-Hsun Chen ◽  
Ting-Chang Chang ◽  
Kai-Chun Chang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Hot Carrier ◽  
P Type ◽  
Technology Nodes ◽  
Hot Carrier Degradation

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation
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